CM900HB-90H POWEREX | Alldatasheet

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Single IGBTMOD™ H VIGBT

900 Amperes/4500 Volts

Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 7.48 190.0 B 5.51 140.0 C 1.50 38.0 D 6.73 171.0 E 4.88 ±0.01 124.0 ±0.25 F 1.57 40.0 G 0.79 20.0 H 0.80 20.25 J 1.62 41.25 K 3.13 79.4 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low V CE(sat) □ Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ Traction □ Medium Voltage Drives □ High Voltage Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM900HB-90H is a 4500V (V CES ),

900 Ampere Single IGBTMOD™

Power Module. Type Current Rating V CES Amperes Volts (x 50) CM 900 90 Dimensions Inches Millimeters M 0.51 13.0 N 2.42 61.5 P 0.59 15.0 Q 1.57 40.0 R 0.20 5.2 S 1.16 29.5 T 1.10 28.0 U M4 Metric M4 V M8 Metric M8 W 0.28 Dia. Dia. 7.0 X 0.20 5.0 T U NUTS (3 TYP) P Q S A D LLL V NUTS (6 TYP) B W (8 TYP) H J K NN X C F R E G E C C EE CC C CM EG E C E E C C E

Single IGBTMOD ™ HVIGBT Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM900HB-90H Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (VGE = 0V) V CES 4500 Volts Gate-Emitter Voltage (VCE = 0V) V GES ±20 Volts Collector Current (Tc = 25°C) I C 900 Amperes Peak Collector Current (Pulse) I CM 1800* Amperes Diode Forward Current (Tc = 25°C) I E 900 Amperes Diode Forward Surge Current (Pulse) I EM 1800* Amperes Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj ≤ 125°C) P C 10000 Watts Max. Mounting Torque M8 Terminal Screws – 115 in-lb Max. Mounting Torque M6 Mounting Screws – 53 in-lb Max. Mounting Torque M4 Auxiliary Terminal Screws – 17 in-lb Module W eight (Typical) – 2.2 kg V Isolation (Charged Part to Baseplate, AC 60Hz 1 min.) Viso 6000 Volts * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V –– 18.0 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V –– 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 90mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 900A, VGE = 15V , Tj = 25°C – 3.0 3.9* Volts IC = 900A, VGE = 15V, Tj = 125°C – 3.3 – Volts Total Gate Charge Q G VCC = 2250V, IC = 900A, VGE = 15V – 7.5 – µC Emitter-Collector Voltage** VEC IE = 900A, VGE = 0V – 4.0 5.2 Volts * Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Single IGBTMOD ™ HVIGB T Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies – 162 – nF Output Capacitance C oes VGE = 0V , VCE = 10V – 12.0 – nF Reverse Transfer Capacitance C res – 3.6 – nF Resistive Turn-on Delay Time t d(on) VCC = 2250V, IC = 900A, –– 2.4 µs Load Rise Time t r VGE1 = VGE2 = 15V, –– 2.4 µs Switching Turn-off Delay Time t d(off) R G = 10Ω –– 6.0 µs Times Fall Time t f Resistive Load Switching Operation –– 1.2 µs Diode Reverse Recovery Time t rr IE = 900A, diE/dt = -1800A/µs –– 1.8 µs Diode Reverse Recovery Charge Q rr IE = 900A, diE/dt = -1800A/µs – 360* – µC * Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Q Per IGBT –– 0.010 K/W Thermal Resistance, Junction to Case Rth(j-c) D Per FWDi –– 0.020 K/W Contact Thermal Resistance, Case to Fin Rth(c-f) Per Module, Thermal Grease Applied – 0.007 – K/W

Single IGBTMOD ™ HVIGBT Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 EMITTER CURRENT, I E, (AMPERES) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TURN-ON SWITCHING ENERGY, Eon, (J/P) HALF-BRIDGE TURN-ON SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 0 400 800 1200 1600 COLLECTOR CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 500 1500 VGE = 15V 20001000 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TURN-ON SWITCHING SAFE OPERATING AREA (RBSOA) (TYPICAL) 0 1000 2000 3000 4000 5000 2000 2500 1500 1000 500 0 500 1000 Tj = 25°C Tj = 125°C 20001500 0 400 800 1600 1200 VCC = 2250V VGE = ±15V R G = 10Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range Of 10% VCC = 3000V VGE = ±15V R G = 10Ω LS = 100nH Tj = 125°C COLLECTOR CURRENT, I C , (AMPERES) TURN-OFF SWITCHING ENERGY, Eoff, (J/P) HALF-BRIDGE TURN-OFF SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 2250V VGE = ±15V R G = 10Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range of 10% 0.2 0.6 1.0 1.2 EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY ENERGY, Erec, (J/P) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 0 400 1200 1600 800 0.4 0.8 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) DIODE REVERSE RECOVERY SAFE OPERATING AREA (TYPICAL) 2000 0 1000 2000 3000 1000 1500 500 REVERSE RECOVERY CURRENT, I rr, (AMPERES) 4000 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 1.2 10-210-3 10-1 100 1.0 0.8 0.2 0.4 0.6 Single Pulse T C = 25°C Per Unit Base = Rth(j-c) = 0.010 K/W Zth = Rth • (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)1.2 10-210-3 10-1 100 1.0 0.8 0.2 0.4 0.6 Single Pulse T C = 25°C Per Unit Base = Rth(j-c) = 0.020 K/W Zth = Rth • (NORMALIZED VALUE) VCC = 2250V VGE = ±15V R G = 10Ω LS = 180nH Tj = 125°C Inductive Load Integrated Over Range of 10% IGBT Drive Conditions Tj = 25°C Tj = 125°C