CM900DU-24NF POWEREX | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Mega Power Dual™ IGBTMOD

900 Amperes/1200 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Description: Pow erex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each tran- sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter- connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low V CE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ High Power UPS □ Large Motor Drives □ Utility Interface Inverters Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM900DU-24NF is a 1200V (V CES ), 900 Ampere Dual IGBTMOD Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 900 24 A DP (8 PLACES) L TC MEASURED POINTS (THE SIDE OF CU BASEPLATE) L MHH H HHH K G U HH E F F C2E1 E2 C1 C C2E1 C GE EG LABEL V S T B U C J J G G R (9 PLACES) Dimensions Inches Millimeters A5 .91 150.0 B5 .10 129.5 E6 .54 166.0 G1 .65 42.0 H0 .55 14.0 S = VHR-2N T = VHR-5N Dimensions Inches Millimeters K 0.16 4.0 P 0.26 6.5 R M6 Metric M6 U 0.62 15.7 V 0.71 18.0

Mega Power Dual™ IGBTMOD Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM900DU-24NF Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1200 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (TC = 25°C) I C 900 Amperes Peak Collector Current (Tj ≤ 150°C) I CM 1800* Amperes Emitter Current (TC = 25°C) I E 900 Amperes Peak Emitter Current I EM 1800* Amperes Maximum Collector Dissipation (Tj < 150°C) (TC' = 25°C) P C 5950 Watts Mounting Torque, M6 Mounting Screws – 40 in-lb Mounting Torque, M6 Main Terminal Screw – 40 in-lb W eight (Typical) – 1400 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Volts Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 1 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 90mA, VCE = 10V 6 7 8 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 900A, VGE = 15V, Tj = 25°C– 1.9 2.5 Volts (Without Lead Resistance) (Chip) I C = 900A, VGE = 15V, Tj = 125°C– 2.1 – Volts Module Lead Resistance R (lead) IC = 900A, Terminal-chip – 0.143 – m Ω Total Gate Charge Q G VCC = 600V, IC = 900A, VGE = 15V – 4800 – nC Emitter-Collector Voltage V EC IE = 900A, VGE = 0V – – 3.4 Volts Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 140 nF Output Capacitance C oes VCE = 10V , VGE = 0V – – 16 nF Reverse Transfer Capacitance C res –– 3 n F Inductive Turn-on Delay Time t d(on) VCC = 600V, – – 300 ns Load Rise Time t r IC = 900A, IE = 900A, – – 200 ns Switch Turn-off Delay Time t d(off) VGE1 = VGE2 = 15V, – – 800 ns Times Fall Time t f R G = 1.0/H9024,– – 300 ns Diode Reverse Recovery Time t rr Inductive Load – – 500 ns Diode Reverse Recovery Charge** Q rr Switching Operation – 50 – µC * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Mega Power Dual™ IGBTMOD Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c')QP er IGBT 1/2 Module, – – 0.021 °C/W TC Reference Point Under Chip Thermal Resistance, Junction to Case Rth(j-c')DP er FWDi 1/2 Module, TC Reference – – 0.034 °C/W TC Reference Point Under Chip Contact Thermal Resistance R th(c-f) Per 1/2 Module, Thermal Grease Applied – 0.016 – °C/W COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE(TYPICAL) 100 102 103 102 101 100 10-1 102 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 104 EMITTER CURRENT, I E, (AMPERES) GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 Tj = 25°C COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 300 900 18001200 1500 VGE = 15V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VGE = 0V C ies C oes C resIC = 360A IC = 1800A IC = 900A COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 123456789 1 0 1000 1200 400 200 VGE = 20V Tj = 25oC 800 600 1600 1400 1800 1000 1200 400 200 800 600 1600 1400 1800 600 GATE-EMITTER VOLTAGE, V GE , (VOLTS) TRANSFER CHARACTERISTICS (TYPICAL) 08 1 2 16 VCE = 10V Tj = 25°C Tj = 125°C 10-1

Mega Power Dual™ IGBTMOD Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE COLLECTOR CURRENT, I C , (AMPERES) 104 101 102 103 102 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 1000 2000 4000 70003000 50006000 VCC = 600V td(off) td(on) tr VCC = 600V VGE = ±15V R G = 1.0Ω Tj = 125°C Inductive Loadtf EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 102 101 REVERSE RECOVERY CURRENT, I rr, (AMPERES) trr Irr VCC = 600V VGE = ±15V R G = 1.0Ω Tj = 25°C Inductive Load VCC = 400V IC = 900A 103 103 EMITTER CURRENT, I E, (AMPERES) SWITCHING LOSS, E rr, (mJ/PULSE) SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) 101 102 103 100 101 102 VCC = 600V VGE = 15V Tj = 125°C R G = 1.0Ω Inductive Load COLLECTOR CURRENT, I C , (AMPERES) SWITCHING LOSS, E SW(on), ESW(off), (mJ/PULSE) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 101 102 103 100 102 101 103 VCC = 600V VGE = 15V Tj = 125°C R G = 1.0Ω ESW(on) ESW(off) Inductive Load TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth  (NORMALIZED VALUE) Per Unit Base R th(j-c) = 0.021°C/W (IGBT) R th(j-c) = 0.034°C/W (FWDi) Single Pulse T C = 25°C