CM800HB-66H POWEREX | Alldatasheet
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Feb. 2000 MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE INSULATED TYPE l Insulated Type l 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. CM800HB-66H OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CIRCUIT DIAGRAM C G E CC E E C G 3 - M4 NUTS 4 - M8 NUTS C ECM E C E LABEL 57–0.2557–0.25 140 114 130 61.5 5.2 29.5 48.8 124 –0.25 10.65 10.35 6 - φ7MOUNTING HOLES 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar T ransistor) Modules HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Feb. 2000 MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE INSULATED TYPE V V V CE = VCES , VGE = 0V VGE = VGES , VCE = 0V Tj = 25°C Tj = 125°C VCC = 1650V, IC = 800A, VGE = 15V VCC = 1650V, IC = 800A VGE1 = VGE2 = 15V RG = 2.5Ω Resistive load switching operation I E = 800A, VGE = 0V IE = 800A, die / dt = –1600A / µs (Note 1) Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied I C = 80mA, VCE = 10V IC = 800A, VGE = 15V (Note 4) VCE = 10V VGE = 0V Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass V GE = 0V VCE = 0V TC = 25°C Pulse (Note 1) T C = 25°C Pulse (Note 1) T C = 25°C, IGBT part Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 T ypical value Collector current Emitter current 3300 ±20 800 1600 800 1600 10400 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 MAXIMUM RATINGS (Tj = 25°C) Symbol Item Conditions Unit Ratings V V A A A A W V N·m N·m N·m kg V CES VGES IC ICM IE (Note 2) IEM (Note 2) P C (Note 3) Tj Tstg Viso Min Typ Max 0.5 4.94 1.60 2.00 2.50 1.00 3.64 1.40 0.012 0.024 mA µA nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W 3.80 4.00 120 12.0 3.6 5.7 2.80 270 0.008 I CES IGES C ies C oes C res Q G td (on) tr td (off) tf V EC (Note 2) trr (Note 2) Q rr (Note 2) R th(j-c)Q R th(j-c)R R th(c-f) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Item Conditions VGE(th) VCE(sat) Limits Unit 6.0 4.5 Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 2. IE, VEC , trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 7.5 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar T ransistor) Modules HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Feb. 2000 MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE INSULATED TYPE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar T ransistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL ) COLLECTOR CURRENT I C (A) TRANSFER CHARACTERISTICS (TYPICAL ) COLLECTOR CURRENT I C (A) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) COLLECTOR CURRENT I C (A) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL ) EMITTER CURRENT I E (A) EMITTER-COLLECTOR VOLTAGE V EC (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL ) 800 400 0 10 0 246 1200 1600 400 800 1200 1600 VGE =15V Tj = 25°C Tj = 125°C 1600 800 400 1200 05 4 3 2 1 102 104 Tj=25°C 20048 1 2 1 6 VCE =10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) 02 0 16 12 8 4 COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL ) Tj = 25°C IC = 1600A IC = 800A IC = 320A Tj=25°C VGE =13V VGE =12V VGE =11V VGE =10V VGE =9V VGE =8V VGE =7V VGE =14V VGE =15V VGE =20V 101 2310–1 571 00 23 57 1 01 23 57 1 02 103 CAPACITANCE VS. V CE (TYPICAL ) CAPACITANCE C ies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE V CE (V) C ies C oes C res VGE = 0V, Tj = 25°C C ies, C oes : f = 100kHz C res : f = 1MHz
Feb. 2000 MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE INSULATED TYPE2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar T ransistor) Modules 71 0 100 23 5 7 1 0 3 23 55 71 0 10–1 23 5 7 1 0 3 23 55 td(off) VCC = 1650V, VGE = –15V R G = 2.5Ω , Tj = 125°C Inductive load td(on) tr tf HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL ) SWITCHING TIMES (µs) COLLECTOR CURRENT I C (A) VCC = 1650V, Tj = 125°C Inductive load V GE = –15V, RG = 2.5Ω trr Irr REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL ) REVERSE RECOVERY TIME t rr (µs) EMITTER CURRENT I E (A) REVERSE RECOVERY CURRENT I rr (A) 10–2 10–3 10–2 10–1 100 101 23 57 23 57 23 57 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th(j – c) TIME (s) 10–2 10–3 10–2 10–1 100 101 23 57 23 57 23 57 NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th(j – c) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) Single Pulse T C = 25°C R th(j – c) = 0.012°C/W Single Pulse T C = 25°C R th(j – c) = 0.024°C/W 0 8000 10000 6000 0 2000 4000 V GE – GATE CHARGE (TYPICAL ) GATE-EMITTER VOLTAGE V GE (V) GATE CHARGE Q G (nC ) VCC = 1650V IC = 800A