CM800HA-28H

CM800HA-28H POWEREX | Alldatasheet

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Single IGBTMOD™ H-Series Module

800 Amperes/1400 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 5.12 130.0 B 4.33 ±0.01 110.0 ±0.25 C 1.840 46.75 F 1.42 36.0 G 1.25 31.8 H 1.18 30.0 J 1.10 28.0 K 1.08 27.5 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: h Low Drive Power h Low V CE(sat) h Discrete Super-Fast Recovery (135ns) Free-Wheel Diode h High Frequency Operation (20-25kHz) h Ysolated Baseplate for Easy Heat Sinking Applications: h AC Motor Control h Motion/Servo Control h UPS h Welding Power Supplies h Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM800HA-28H is a 1400V (V CES ),

800 Ampere Single IGBTMOD™

Power Module. Type Current Rating V CES Amperes Volts (x 50) CM 800 28 Dimensions Inches Millimeters L 0.79 20.0 M 0.77 19.5 N 0.75 19.0 P 0.61 15.6 Q 0.51 13.0 R 0.35 9.0 S M8 Metric M8 T 0.26 Dia. Dia. 6.5 U M4 Metric M4 DE E C E G H K R AB B A NF L M C J G P Q C U - M4 THD (2 TYP.) S - M8 THD (2 TYP.) T - DIA. (4 TYP.) E G E

Single IGBTMOD™ H-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM800HA-28H Units Junction Temperature T j –40 to +150 °C Storage Temperature T stg –40 to +125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1400 Volts Gate-Emitter Voltage V GES ±20 Volts Collector Current IC 800 Amperes Peak Collector Current I CM 1600* Amperes Diode Forward Current I F 800 Amperes Diode Forward Surge Current I FM 1600* Amperes Power Dissipation Pd 4800 Watts Max. Mounting Torque M8 Terminal Screws – 95 in-lb Max. Mounting Torque M6 Mounting Screws – 26 in-lb Max. Mounting Torque M4 G-E Terminal Screws – 13 in-lb Module Weight (T ypical) – 1600 Grams V Isolation VRMS 2500 Volts * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 5.0 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 80mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 800A, VGE = 15V – 2.7 3.6 Volts IC = 800A, VGE = 15V, Tj = 150°C – 2.4 – Volts Total Gate Charge Q G VCC = 600V, IC = 800A, VGS = 15V – 4590 – nC Diode Forward Voltage V FM IE = 800A, VGS = 0V – – 3.5 Volts * Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies – – 172 nF Output Capacitance C oes VGE = 0V, VCE = 10V , f = 1MHz – – 60 nF Reverse Transfer Capacitance C res –– 3 5 n F Resistive Turn-on Delay Time t d(on) ––5 0 0 n s Load Rise Time t r VCC = 600V, IC = 800A, – – 1200 ns Switching Turn-off Delay Time t d(off) VGE1 = VGE2 = 15V, RG = 3.3Ω – – 1000 ns Times Fall Time t f ––3 5 0 n s Diode Reverse Recovery Time t rr IE = 800A, diE/dt = –1600A/µs – – 250 ns Diode Reverse Recovery Charge Q rr IE = 800A, diE/dt = –1600A/µs – 6.3 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c) Per IGBT – – 0.026 °C/W Thermal Resistance, Junction to Case R th(j-c) Per FWDi – – 0.058 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – – 0.018 °C/W

Single IGBTMOD™ H-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 VCE , (VOLTS) IC , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 1600 02468 1 0 1200 800 400 Tj = 25°C VGE = 20V VGE , (VOLTS) IC , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 1600 048 1 2 1 6 2 0 1200 800 400 VCE = 10V Tj = 25°C Tj = 125°C VGE , (VOLTS) VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 IC = 1600A IC = 800A IC = 320A VEC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) IE, (AMPERES) COLLECTOR CURRENT I C , (AMPERES) SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 103 101 102 100 10-1 104 103 102 101 101 VGE = 0V C res C oes C ies EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 103102 104 102 101 Irr trr 103 102 101 REVERSE RECOVERY CURRENT, I rr, (AMPERES) di/dt = -1600A/µsec Tj = 25°C GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 1500 3000 4500 7500 VCC = 800VVCC = 600V IC = 800A Tj = 25°C 6000 IC , (AMPERES) VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 400 800 1200 VGE = 15V Tj = 25°C Tj = 125°C 1600 Tj = 25°C

Single IGBTMOD™ H-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.026°C/W Zth = R th

• (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.58 °C/W Zth = R th
• (NORMALIZED VALUE) 10-1 10-2 10-3