CM800DY-24S

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Dual IGBTMOD™ S-Series Module

800 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 13/11 Rev. 0 Description: Powerex Dual IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM800DY -24S is a 1200V (VCES), 800 Ampere Dual IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 800 24 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 5.51 140.0 B 5.12 130.0 D 0.45 11 .5 E 0.39 10.0 F 4.33 ±0.001 110.0 ±0.25 G 0.54 13.8 H 1 .42 36.0 J 1 .72 43.8 K 0.35 9.0 L 0.59 15.0 M 0.80 20.4 N 0.57 14.5 Dimensions Inches Millimeters P 1 .57 40.0 Q 2.56 65.0 R 0.79 20.0 S 0.32 8.0 T 0.26 Dia. 6.5 Dia. U M8 Metric M8 V M4 Metric M4 W 0.43 11 .1 X 1 .02 26.0 Y 0.29 7 .3 Z 0.16 4.0 Di2 Di1Tr2 Tr1 C1E2C2E1 A B F E M N P U NUTS (3 PLACES) V NUTS (4 PLACES)T (4 PLACES) F N H J K D G R YW X X L X Q E LABEL B C2E1 G2E2E1G1 C Z S AA

Dual IGBTMOD™ S-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 3/11 Rev. 02 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM800DY-24S Units Maximum Junction Temperature Tj(max) +175 °C Operating Junction Temperature Tj(op) -40 ~ +150 °C Storage Temperature Tstg -40 ~ +125 °C Case Temperature*2 TC -40 ~ +125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current (DC, Tc = 117°C)*2,*8 I C 790 Amperes Peak Collector Current (Pulse, Repetitive)*3 I CRM 1600 Amperes Total Power Dissipation (Tc = 25°C)*2,*4 P tot 5355 Watts Emitter Current (FWDi Current, Tc = 25°C)*2,*4,*8 I E*1

790 Amperes

Peak Emitter Current (FWDi Current, Pulse, Repetitive)*3 I ERM*1

1600 Amperes

Mounting Torque, M8 Main Terminals – 95 in-lb Mounting Torque, M4 Auxiliary Terminals – 15 in-lb Mounting Torque, M6 Mounting to Heatsink – 40 in-lb Creepage Distance (Terminal to Terminal) ds – mm Creepage Distance (Terminal to Baseplate) ds – mm Clearance (Terminal to Terminal) da – mm Clearance (Terminal to Baseplate) da – mm Weight – 1200 Grams Flatness of Baseplate (On the Centerline X, Y)*7 e c -100 ~ +100 µm Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 min.) V iso 2500 Volts *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *6 Typical value is measured by using thermally conductive grease of λ = 0.9 W/(m•K). *7 Baseplate flatness measurement point is as in the following figure. *8 This module has 800A IGBT and FWDi chips. This limitation is based on a package limitation. X BOTTOM – CONCAVE + CONVEX – CONCAVE + CONVEX BOTTOM BOTTOM LABEL SIDE Y

Dual IGBTMOD™ S-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 3/11 Rev. 0 3 Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate-Emitter Leakage Current IGES V GE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) I C = 80mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 800A, VGE = 15V, Tj = 25°C*5 – 1 .95 2.40 Volts (Terminal) I C = 800A, VGE = 15V, Tj = 125°C*5 – 2.25 – Volts I C = 800A, VGE = 15V, Tj = 150°C*5 – 2.35 – Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 800A, VGE = 15V, Tj = 25°C – 1 .70 2.15 Volts (Chip) I C = 800A, VGE = 15V, Tj = 125°C – 1 .90 – Volts I C = 800A, VGE = 15V, Tj = 150°C – 1 .95 – Volts Gate Charge QG V CC = 600V, IC = 800A, VGE = 15V – 1868 – nC Emitter-Collector Voltage VEC*1 I E = 800A, VGE = 0V, Tj = 25°C*5 – 1 .85 2.30 Volts (Terminal) I E = 800A, VGE = 0V, Tj = 125°C*5 – 1 .85 – Volts I E = 800A, VGE = 0V, Tj = 150°C*5 – 1 .85 – Volts Emitter-Collector Voltage VEC*1 I E = 800A, VGE = 0V, Tj = 25°C – 1 .70 2.15 Volts (Chip) I E = 800A, VGE = 0V, Tj = 125°C – 1 .70 – Volts I E = 800A, VGE = 0V, Tj = 150°C – 1 .70 – Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies – – 80.0 nF Output Capacitance Coes V CE = 10V, VGE = 0V – – 16.0 nF Reverse Transfer Capacitance Cres – – 1 .32 nF Turn-on Delay Time td(on) V CC = 600V, IC = 800A, – – 800 ns Rise Time tr V GE = 15V, – – 200 ns Turn-off Delay Time td(off) R G = 0W, – – 600 ns Fall Time tf Inductive Load – – 300 ns Reverse Recovery Time trr*1 V CC = 600V, IE = 800A, VGE = ±15V, – – 300 ns Reverse Recovery Charge Qrr*1 R G = 0W, Inductive Load – 42.8 – µC Turn-on switching Energy (Per Pulse) Eon V CC = 600V, IC = IE = 800A, – 107 – mJ Turn-off Switching Energy (Per Pulse) E off V GE = ±15V, RG = 0W, – 82 – mJ Reverse Recovery Energy (Per Pulse) E rr*1 Tj = 150°C, Inductive Load – 71 – mJ Internal Lead resistance RCC' + EE' Main Terminals-Chip, – – 0.4 m W Per Switch, TC = 25°C*2 Internal Gate Resistance rg Per Switch – 2.45 – W *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

Dual IGBTMOD™ S-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 3/11 Rev. 04 Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case*2 R th(j-c)Q Per IGBT – – 0.028 °C/W Thermal Resistance, Junction to Case*2 R th(j-c)R Per FWDi – – 0.045 °C/W Contact Thermal Resistance*2 R th(c-s) Case to Heatsink,Per 1/2 Module, – 0.015 – °C/W Thermal Grease Applied*6 Recommended Operating Conditions, Ta = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units DC Supply Voltage VCC Applied Across C1-E2 – 600 850 Volts Gate (-Emitter Drive) Voltage VGE(on) Applied Across G1-Es1/G2-Es2 13.5 15.0 16.5 Volts External Gate Resistance RG Per Switch 0 – 5.1 W *2 Case temperature (TC) and heatsink temperature (Ts) measured point is just under the chips. *6 Typical value is measured by using thermally conductive grease of λ = 0.9 W/(m•K).

Dual IGBTMOD™ S-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 3/11 Rev. 0 5 COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 1200 1600 400 800 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3.5 3.0 2.5 2.0 1.5 0.5 1.0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 102 103 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 103 102 101 100 10-1 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 2 4 6 8 10 VGE = 20V 13.515 Tj = 25°C COLLECTOR-CURRENT, IC, (AMPERES) 0 400 800 1200 1600 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 4 8 12 16 20 Tj = 25°C IC = 320A IC = 1600A IC = 800A EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10-1 100 102 VGE = 0V f = 1MHz 101 Coes Cres Cies COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 101 SWITCHING TIME, td(on), tr, td(off), tf, (ns) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) td(off) td(on) trVCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load tf 103 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 101 SWITCHING TIME, td(on), tr, td(off), tf, (ns) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load tf 103 GATE RESISTANCE, RG, (Ω) 103 10-1 101100 102 101 SWITCHING TIME, td(on), tr, td(off), tf, (ns) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V IC = 800A Tj = 125°C Inductive Load tf 102 GATE RESISTANCE, RG, (Ω) 104 100 101 103 102 101 SWITCHING TIME, td(on), tr, td(off), tf, (ns) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V IC = 800A Tj = 150°C Inductive Load tf 102 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C

Dual IGBTMOD™ S-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 3/11 Rev. 06 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT Part) Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.028°C/W TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi Part) 100 10-1 10-2 10-3 10-5 10-310-4 10-2 10-1 100 101 Zth = Rth • (NORMALIZED VALUE) TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) 100 10-1 10-2 10-3 10-5 10-310-4 10-2 10-1 100 101 Zth = Rth • (NORMALIZED VALUE) Single Pulse T C = 25°C Per Unit Base = R th(j-c) = 0.045°C/W GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE, VGE 0 500 15001000 300025002000 EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 102 101 100 REVERSE RECOVERY CURRENT, Irr, (AMPERES) IC = 800A VCC = 600V COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) SWITCHING ENERGY, Eon, Eoff, Err, (mJ/PULSE) 103 101 102 102 101 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) VCC = 600V VGE = ±15V IC = 800A Tj = 125°C Inductive Load GATE RESISTANCE, RG, (Ω) SWITCHING ENERGY, Eon, Eoff, Err, (mJ/PULSE) 103 10-1 100 101 102 101 102 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) SWITCHING ENERGY, Eon, Eoff, Err, (mJ/PULSE) 103 101 102 102 101 VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) Eon Eoff Err VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load Eon Eoff Err VCC = 600V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load trr Irr EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 102 101 100 REVERSE RECOVERY CURRENT, Irr, (AMPERES) VCC = 600V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load trr Irr Eon Eoff Err VCC = 600V VGE = ±15V IC = 800A Tj = 150°C Inductive Load GATE RESISTANCE, RG, (Ω) SWITCHING ENERGY, Eon, Eoff, Err, (mJ/PULSE) 103 10-1 100 101 102 101 102 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) Eon Eoff Err