CM800DU-12H

CM800DU-12H POWEREX | Alldatasheet

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Dual IGBTMOD™ U-Series Module

800 Amperes /600 Volts

Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 5.12 130.0 B 5.12 130.0 C 1.38 35.0 D 0.96 24.5 E 4.33 110.0 F 0.39 10.0 G 0.39 10.0 H 0.81 20.5 J 0.53 14.5 Dimensions Inches Millimeters K 1.57 40.0 L 1.42 36.0 M 1.72 43.8 N 0.54 13.8 P 0.45 11.5 Q 5.51 140.0 R 0.26 Dia. 6.5 Dia. SM 8 M 8 TM 4 M 4 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each tran- sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter- connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low V CE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM800DU-12H is a 600V (V CES ), 800 Ampere Dual IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 800 12 C2E1 C2E1 G2 E2 E1 G1 A B E E J K J F Q D C N P ML H G "R" (4 PLACES) "S" (3 PLACES) "T" (4 PLACES)

Dual IGBTMOD ™ U-Series Module

800 Amperes/600 Volts

Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM800DU-12H Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 600 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 800 Amperes Peak Collector Current I CM 1600* Amperes Emitter Current (Tc = 25°C) I E 800 Amperes Peak Emitter Current I EM 1600* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 1500 W atts Mounting Torque, M8 Main Terminal – 95 in-lb Mounting Torque, M6 Mounting – 40 in-lb G(E) Terminal, M4 – 15 in-lb W eight – 1200 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V –– 2m A Gate Leakage Voltage I GES VGE = VGE S, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 80mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 800A, VGE = 15V, Tj = 25°C – 2.55 3.15 Volts IC = 800A, VGE = 15V, Tj = 125°C – 2.75 – Volts Total Gate Charge Q G VCC = 300V, IC = 800A, VGE = 15V – 1600 – nC Emitter-Collector Voltage V EC IE = 800A, VGE = 0V –– 2.6 Volts Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 70.4 nf Output Capacitance C oes VCE = 10V , VGE = 0V –– 38.4 nf Reverse Transfer Capacitance C res – – 10.4 nf Resistive Turn-on Delay Time t d(on) VCC = 300V, IC = 800A, – – 400 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 2000 ns Switch Turn-off Delay Time td(off) R G = 3.1/H9024, Resistive – – 500 ns Times Fall Time tf Load Switching Operation – – 300 ns Diode Reverse Recovery Time t rr IE = 800A, diE/dt = -1600A/µs –– 160 ns Diode Reverse Recovery Charge Q rr IE = 800A, diE/dt = -1600A/µs – 1.92 – µC Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT 1/2 Module – – 0.083 °C/W Thermal Resistance, Junction to Case R th(j-c)R Per FWDi 1/2 Module – – 0.13 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.010 – °C/W

Dual IGBTMOD ™ U-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02468 1 0 1200 400 VGE = 20V 20 12 Tj = 25oC 800 1600 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 1600 1200 800 400 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 400 800 1200 1600 VGE = 15V Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 Tj = 25°C IC = 320A IC = 1600A IC = 800A 101 102 103 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE(TYPICAL) 10-1 100 102 102 101 100 10-1 VGE = 0V f = 1MHz 101 C oes C res C ies COLLECTOR CURRENT, I C , (AMPERES) 103 101 102 103 102 101 td(off) td(on) tr VCC = 300V VGE = ±15V R G = 0.78 Ω Tj = 125°C tf SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 trr Irr di/dt = -1600A/µsec Tj = 25°C 102 101 100 REVERSE RECOVERY CURRENT, I rr, (AMPERES) GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 500 1500 1000 25002000 VCC = 300V VCC = 200V IC = 400A

Dual IGBTMOD ™ U-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.06°C/W Zth = Rth • (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.09 °C/W Zth = Rth • (NORMALIZED VALUE) 10-1 10-2 10-3