CM600HU-24H

CM600HU-24H POWEREX | Alldatasheet

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Technical content

Single IGBTMOD™ U-Series Module

600 Amperes/1200 Volts

Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.33 110.0 C 3.15 80.0 E 0.53 13.5 F 0.37 9.5 G 0.57 14.5 Dimensions Inches Millimeters H 0.96 24.5 J 0.22 5.5 K 1.14 29.0 L 0.85 21.5 N 0.26 Dia. 6.5 Dia. Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem- bly and thermal management. Features: h Low Drive Power h Low V CE(sat) h Discrete Super-Fast Recovery Free-Wheel Diode h Isolated Baseplate for Easy Heat Sinking Applications: h AC Motor Control h Motion/Servo Control h UPS h Welding Power Supplies h Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM600HU-24H is a 1200V (V CES ), 600 Ampere Single IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 600 24 CM EE G C A H E F N 4 - Mounting Holes K C 2 - M4 NUTS 2 - M8 NUTS J G D L B P M E E G C TC Measured Point CM600HU-24H

Single IGBTMOD™ U-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600HU-24H Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1200 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 600 Amperes Peak Collector Current (Tj ≤ 150°C) I CM 1200* Amperes Emitter Current (Tc = 25°C) I E 600 Amperes Peak Emitter Current I EM 1200* Amperes Maximum Collector Dissipation (Tc = 25°C) P c 3100 Watts Mounting Torque, M8 Main Terminal – 95 in-lb Mounting Torque, M6 Mounting – 40 in-lb Mounting Torque, M4 Terminal – 15 in-lb Weight – 600 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 2 mA Gate Leakage Voltage I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 60mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 600A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts IC = 600A, VGE = 15V, Tj = 125°C – 2.85 – Volts Total Gate Charge Q G VCC = 600V , IC = 600A, VGE = 15V – 2250 – nC Emitter-Collector Voltage* V EC IE = 600A, VGE = 0V – – 3.2 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 9 0 n f Output Capacitance C oes VCE = 10V , VGE = 0V – – 31.5 nf Reverse Transfer Capacitance C res –– 1 8 n f Resistive Turn-on Delay Time t d(on) VCC = 600V, IC = 600A, – – 300 ns Load Rise Time t r VGE1 = VGE2 = 15V, – – 700 ns Switch Turn-off Delay Time t d(off) R G = 2.1V, Resistive – – 450 ns Times Fall Time t f Load Switching Operation – – 350 ns Diode Reverse Recovery Time t rr IE = 600A, diE/dt = -1200A/µs – – 300 ns Diode Reverse Recovery Charge Q rr IE = 600A, diE/dt = -1200A/µs – 3.3 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT Module – – 0.04 °C/W Thermal Resistance, Junction to Case R th(j-c)D Per FWDi Module – – 0.06 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.015 – °C/W

Single IGBTMOD™ U-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 800 1600 2400 3200 VCC = 600V VCC = 400V IC = 600A EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 trr Irr di/dt = -1200A/µsec Tj = 25°C 102 101 100 REVERSE RECOVERY CURRENT, I rr, (AMPERES) COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE(TYPICAL) 10-1 100 102 102 101 100 10-1 VGE = 0V f = 1MHz 101 C ies C oes C res 101 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C 103 102 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 Tj = 25°C IC = 240A IC = 1200A IC = 600A COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 240 480 720 960 1200 VGE = 15V Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 960 720 480 240 1200 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02468 1 0 720 240 VGE = 20V Tj = 25oC 480 960 1200 COLLECTOR CURRENT, I C , (AMPERES) 101 102 103 103 102 101 td(off) td(on) tr VCC = 600V VGE = –15V R G = 2.1 Ω Tj = 125°C tf SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)

Single IGBTMOD™ U-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.04°C/W Zth = R th

• (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.06°C/W Zth = R th
• (NORMALIZED VALUE)