CM600HU-24F POWEREX | Alldatasheet

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Technical content

Single IGBTMOD™

600 Amperes/1200 Volts

Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.33 110.0 B 3.15 80.0 F 0.22 5.5 G 0.57 14.5 H 0.53 13.5 J 0.96 24.5 Dimensions Inches Millimeters K 1.14 29.0 L 0.37 9.5 P 0.85 21.5 Q 0.16 4.0 RM 8 M 8 S 0.26 Dia. 6.5 Dia. TM 4 M 4 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-con- nected super-fast recovery free- wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low V CE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM600HU-24F is a 1200V (V CE S), 600 Ampere Single IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 600 24 A D S (4 TYP) CM C R (2 TYP.) H J K BE T (2 TYP) G N E G E C Q F L P G E E C RTC TC MEASURING POINT

Trench Gate Design Single IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600HU-24F Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1200 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 600 Amperes Peak Collector Current (Tj ≤ 150°C) I CM 1200* Amperes Emitter Current (Tc = 25°C) I E 600 Amperes Peak Emitter Current I EM 1200* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 1900 W atts Mounting Torque, M8 Main Terminal – 95 in-lb Mounting Torque, M6 Mounting – 40 in-lb Mounting Torque, M4 Terminal – 15 in-lb Weight – 600 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V –– 2m A Gate Leakage Voltage I GES VGE = VCES , VCE = 0V –– 80 µA Gate-Emitter Threshold Voltage V GE(th) IC = 60mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 600A, VGE = 15V, Tj = 25°C – 1.8 2.4 Volts IC = 600A, VGE = 15V, Tj = 125°C – 1.9 – Volts Total Gate Charge Q G VCC = 600V , IC = 600A, VGE = 15V – 6600 – nC Emitter-Collector Voltage** V EC IE = 600A, VGE = 0V –– 3.2 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Trench Gate Design Single IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 230 nf Output Capacitance C oes VCE = 10V, VGE = 0V –– 10 nf Reverse Transfer Capacitance C res –– 6n f Inductive Turn-on Delay Time t d(on) VCC = 600V, IC = 600A, –– 300 ns Load Rise Time t r VGE1 = VGE2 = 15V, –– 150 ns Switch Turn-off Delay Time t d(off) R G = 1.0 /H9024, –– 800 ns Times Fall Time t f Inductive Load –– 300 ns Diode Reverse Recovery Time t rr Switching Operation –– 500 ns Diode Reverse Recovery Charge Q rr IE = 600A – 43.2 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT, T c Reference – 0.063 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)D Per FWDi, T c Reference –– 0.075 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT, – 0.03 °C/W Tc Reference Point Under Chip Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied– 0.015 – °C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Trench Gate Design Single IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 2000 4000 6000 8000 10000 VCC = 600V VCC = 400V IC = 600A EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, I rr, (AMPERES) COLLECTOR CURRENT, I C , (AMPERES) SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 103 102 101 100 VGE = 0V 101 C ies C oes 0 1.0 2.0 3.0 4.0 101 102 103 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 EMITTER CURRENT, I E, (AMPERES) GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 068 1 2 10 18 1614 20 Tj = 25°C IC = 240A IC = 1200A IC = 600A COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 200 400 1200800 1000600 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 01 2 34 Tj = 25oC 200 400 600 1200 800

1000 VGE = 20V

9.5 8.5 C res 103 101 102 103 101 100 td(off) td(on) tr VCC = 600V VGE = ±15V R G = 1.0 Ω Tj = 125°C Inductive Load tf 102 103 101 102 103 102 101 trr 103 102 101 Irr VCC = 600V VGE = ±15V R G = 1.0 Ω Tj = 25°C Inductive Load Tj = 25°C TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Per Unit Base R th(j-c) = 0.063°C/W (IGBT) R th(j-c) = 0.075°C/W (FWDi) Single Pulse T C = 25°C