CM600HG-130H

CM600HG-130H POWEREX | Alldatasheet

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Single IGBTMOD™ HVIGBT Module

600 Amperes/6500 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 H G F M8 NUTS (6 TYP.) Q(8 TYP.)M4 NUTS (3 TYP.) L M C N P C C C E C G E E E F D D A E B D C C C E E E E G C J K K Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 7.48 190.0 B 5.51 140.0 C 1.89 48.0 D 2.24 57.0 E 4.88 124.0 F 0.87 22.0 G 0.47 12.0 H 0.55 14.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Traction £ Medium Voltage Drives £ High Voltage Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600HG-130H is a 6500V (VCES), 600 Ampere Single IGBTMOD™ Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 600 130 Dimensions Inches Millimeters J 2.33 59.2 K 2.41 61.2 L 1.61 41.0 M 0.71 18.0 N 1.50 38.0 P 0.20 5.0 Q 0.28 Dia. 7.0 Dia.

Single IGBTMOD™ HVIGBT Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 2 5/08 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600HG-130H Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Operating Temperature Topr -40 to +125 °C Collector-Emitter Voltage (VGE = 0V) VCES 6500 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, Tc = 80°C) IC 600 Amperes Peak Collector Current (Pulse) ICM 1200* Amperes Emitter Current (Tc = 25°C) IE 600 Amperes Emitter Surge Current (Pulse) IEM 1200* Amperes Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj(max) ≤ 125°C) PC 8900 Watts Partial Discharge (V1 = 6900 Vrms, V2 = 5100 Vrms, 60 Hz (Acc. to IEC 1287)) Qpd 10 pC Max. Mounting Torque M8 Main Terminal Screws – 133 in-lb Max. Mounting Torque M6 Mounting Screws – 53 in-lb Max. Mounting Torque M4 Auxiliary Terminal Screws – 17 in-lb Module Weight (Typical) – 1.35 kg Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Viso 10200 Volts Maximum Turn-Off Switching Current (VCC ≤ 4500V, VGE = ±15V, Tj = 125°C) – 1200 Amperes Short Circuit Capability, Maximum Pulse Width (VCC ≤ 4500V, VGE = ±15V, Tj = 125°C) – 10 μs Maximum Reverse Recovery Instantaneous Power – 3600 kW (VCC ≤ 4500V, die/dt ≤ 3000A/μs, Tj = 125°C) * Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(oprmax) rating (125°C). **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Single IGBTMOD™ HVIGBT Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES V CE = VCES, VGE = 0V, Tj = 25°C – – 10.0 mA V CE = VCES, VGE = 0V, Tj = 125°C – 30 90.0 mA Gate-Emitter Threshold Voltage VGE(th) I C = 60mA, VCE = 10V 5.0 6.0 7.0 Volts Gate Leakage Current IGES V GE = VGES, VCE = 0V – – 0.5 μA Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C – 5.1 – Volts I C = 600A, VGE = 15V, Tj = 125°C – 5.0 – Volts Input Capacitance Cies V CE = 10V, VGE = 0V, – 124 – nF Output Capacitance Coes f = 100kHz, – 7.6 – nF Reverse Transfer Capacitance Cres T j = 25°C – 2.2 – nF Total Gate Charge QG VCC = 3600V, IC = 600A, VGE = 15V – 9.9 – μC Emitter-Collector Voltage VEC I E = 600A, VGE = 0V, Tj = 25°C – 4.0 – Volts I E = 600A, VGE = 0V, Tj = 125°C – 3.6 – Volts Turn-On Delay Time td(on) VCC = 3600V, IC = 600A, – 1.2 – μs Turn-On Rise Time tr V GE1 = -VGE2 = 15V, RG(on) = 10Ω, – 0.35 – μs Turn-On Switching Energy Eon T j = 125°C, toff = 60μs – 4.5 – J/P Turn-Off Delay Time td(off) VCC = 3600V, IC = 600A, – 6.6 – μs Turn-Off Fall Time 1 tf1 V GE1 = -VGE2 = 15V, – 0.5 – μs Turn-Off Fall Time 2 tf2 RG(off) = 24Ω, – 3.3 – μs Turn-Off Switching Energy Eoff T j = 125°C, toff = 60μs – 3.5 – J/P Reverse Recovery Time 1 trr1 V CC = 3600V, IE = 600A, – 1.0 – μs Reverse Recovery Time 2 trr2 die/dt = -2000A/μs, – 2.4 – μs Reverse Recovery Charge Qrr T j = 125°C, – 1100 – μC Reverse Recovery Energy** Erec t off = 60μs – 2.0 – J/P * Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Q Per IGBT – – 14.0 K/kW Thermal Resistance, Junction to Case Rth(j-c) D Per FWDi – – 22.0 K/kW Contact Thermal Resistance, Case to Fin Rth(c-f) Per Module, Thermal Grease Applied – 6.0 – K/kW Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Comparative Tracking Index CTI – 600 – – – Clearance – – 26.0 – – mm Creepage Distance – – 56.0 – – mm Internal Inductance LC-E(int) – – 18 – nH Internal Lead Resistance RC-E(int) – – 0.18 – mΩ

Single IGBTMOD™ HVIGBT Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 4 5/08 COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 1000 2000 3000 6000 02 012 1648 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) Tj = 25°C 4000 5000 VGE = 20V 18V 12V 13V 14V 15V 10V 16V FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 0 1400600 800 1000 1200200 400 VGE = 0V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS) EMITTER CURRENT, IE, (AMPERES) 0.5 1.0 1.5 3.5 3.0 FREE-WHEEL DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 0 1400600 800 1000 1200200 400 VCC = 3600V VGE = ±15V RG(on) = 10Ω LS = 150nH Tj = 125°C 2.0 2.5 REVERSE RECOVERY ENERGY, Erec, (J/PULSE) EMITTER CURRENT, IE, (AMPERES) 0.5 1.0 1.5 3.5 3.0 FREE-WHEEL DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 04 015 20 25 353051 0 VCC = 3600V VGE = ±15V IC = 600A LS = 150nH Tj = 125°C 2.0 2.5 REVERSE RECOVERY ENERGY, Erec, (J/PULSE) GATE RESISTANCE, RG, (Ω) 04 015 20 25 353051 0 VCC = 3600V VGE = ±15V IC = 600A LS = 150nH Tj = 125°C GATE RESISTANCE, RG, (Ω) 0.5 1.0 1.5 3.5 3.0 FREE-WHEEL DIODE REVERSE RECOVERY CHARGE CHARACTERISTICS (TYPICAL) 0 1400600 800 1000 1200200 400 VCC = 3600V VGE = ±15V RG(on) = 10Ω LS = 150nH Tj = 125°C 2.0 2.5 REVERSE RECOVERY CHARGE, Qrr, (J/PULSE) EMITTER CURRENT, IE, (AMPERES) 0.5 1.0 1.5 3.5 3.0 FREE-WHEEL DIODE REVERSE RECOVERY CHARGE CHARACTERISTICS (TYPICAL) 2.0 2.5 REVERSE RECOVERY CHARGE, Qrr, (J/PULSE) COLLECTOR CURRENT, IC, (AMPERES) 8402 01612 GATE-EMITTER VOLTAGE, VGE, (VOLTS) TRANSFER CHARACTERISTICS (TYPICAL) 2000 12000 10000 6000 4000 8000 Tj = 25°C Tj = 125°C VCE = 5V SWITCHING TIME, td(on), (ns) TURN-ON DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) 101 100 10-1 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, td(off), (ns) TURN-OFF DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) VCC = 3600V VGE = ±15V RG(off) = 24Ω RG(on) = 10Ω LS = 150nH Tj = 125°C VCC = 3600V VGE = ±15V RG(off) = 24Ω RG(on) = 10Ω LS = 150nH Tj = 125°C 102 104103 101 100 10-1 COLLECTOR CURRENT, IC, (AMPERES) 102 104103

Single IGBTMOD™ HVIGBT Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, tf, (ns) FALL TIME VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, tr, (ns) RISE TIME VS. COLLECTOR CURRENT (TYPICAL) 1400800 12001000400 600200 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, Eoff, (mJ/PULSE) SWITCHING LOSS (OFF) VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, Eon, (mJ/PULSE) SWITCHING LOSS (ON) VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS, Eoff, (mJ/PULSE) GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, Eon, (mJ/PULSE) GATE RESISTANCE, RG, (Ω) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (pF) 10-1 100 101 102 CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) 103 101 100 102 Cies Coes Cres VGE = 15V f = 100kHz Tj = 25°C TIME, (s) TRANSIENT IMPEDANCE, Rth(j-c) 10-3 10-2 10-1 100 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDI) 1.2 1.0 0.4 0.2 0.6 0.8 SINGLE PULSE TC = 25°C IGBT = Rth(j-c)Q = 14°K/kW FWDI = Rth(j-c)D = 22°K/kW COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VCC = 3600V VGE = ±15V RG(off) = 24Ω RG(on) = 10Ω LS = 150nH Tj = 125°C 101 100 10-1 102 104103 VCC = 3600V VGE = ±15V RG(off) = 24Ω RG(on) = 10Ω LS = 150nH Tj = 125°C VCC = 3600V VGE = ±15V RG(off) = 24Ω RG(on) = 10Ω LS = 150nH Tj = 125°C 1400800 12001000400 6002000 VCC = 3600V VGE = ±15V RG(off) = 24Ω RG(on) = 10Ω LS = 150nH Tj = 125°C 4020 30 352510 1550 VCC = 3600V VGE = ±15V IC = 600A LS = 150nH Tj = 125°C 4020 30 352510 1550 VCC = 3600V VGE = ±15V IC = 600A LS = 150nH Tj = 125°C 101 100 10-1 102 104103 0 1400600 800 1000 1200200 400 VGE = 0V Tj = 25°C Tj = 125°C SWITCHING LOSS (OFF) VS. GATE RESISTANCE (TYPICAL) SWITCHING LOSS (ON) VS. GATE RESISTANCE (TYPICAL)