CM600HC-24NFM

CM600HC-24NFM POWEREX | Alldatasheet

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600 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Outline Drawing and Circuit Diagram Description: Powerex NFM IGBT Modules are designed for use in hard switching (15-30 kHz) applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super- fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified sys- tem assembly and thermal man- agement. Features: £ Low Drive Power £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ UPS £ Battery Powered Supplies £ Induction Heating Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600HC-24NFM is a 1200V (VCES), 600 Ampere Single IGBT Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 600 24 E C A D E QPN J MLK T U (2 TYP.) V (4 TYP.) F C B HG E G SR W W C E G E Dim. Inches Millimeters A 4.25 108.0 B 2.44 62.0 C 1.016 25.8 E 3.15 80.0 F 0.79 20.0 G 0.94 24.0 H 0.79 20.0 J 1.14 29.0 K 0.80 20.4 L 1.38 35.0 Dim. Inches Millimeters M 1.89 48.0 N 0.94 24.0 P 0.23 6.0 Q 0.85 21.5 R 0.14 3.5 S 0.96 24.4 U M6 M6 V 0.26 Dia. 6.5 Dia. W 0.62 15.8

Single IGBT NFM-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600HC-24NFM Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current IC 600 Amperes Peak Collector Current ICM 1200* Amperes Emitter Current IE 600 Amperes Peak Emitter Current IEM 1200* Amperes Maximum Collector Dissipation* (TC = 25°C) PC 3670 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb Mounting Torque, G(E) Terminal M4 — 15 in-lb Weight — 370 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage* VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C — 3.0 4.5 Volts IC = 600A, VGE = 15V, Tj = 125°C — 3.0 — Volts Total Gate Charge QG VCC = 600V, IC = 600A, VGE = 15V — 2700 — nC Emitter-Collector Voltage VEC IE = 600A, VGE = 0V — 2.3 3.3 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies — — 95 nF Output Capacitance*** Coes VCE = 10V, VGE = 0V — — 8.0 nF Reverse Transfer Capacitance Cres — — 1.8 nF Inductive Turn-on Delay Time td(on) — — 400 ns Load Rise Time tr VCC = 600V, IC = 600A, — — 120 ns Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 0.52Ω, — — 700 ns Time Fall Time tf Inductive Load — 60 200 ns Diode Reverse Recovery Time trr Switching Operation, — 130 210 ns Diode Reverse Recovery Charge** Qrr IE = 600A — 28 — µC *Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(max) rating. Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *Junction temperature (Tj) should not increase beyond 150°C. **TC , Tf measured point is just under the chips. ***Pulse width and repetition rate should be such as to cause neglible temperature rise.

Single IGBT NFM-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, — — 0.034 °C/W TC Measured Point Just Under Chips Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, — — 0.07 °C/W TC Measured Point Just Under Chips Contact Thermal Resistance, Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.02 — °C/W Case to Fin External Gate Resistance RG 0.52 — 5.2 Ω 6 8 10 1412 16 18 20 Tj = 25°C IC = 1200A IC = 600A IC = 240A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 103 102 101 100 10-1 1010 1 32 100 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 102 104 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 200 400 600 800 1000 1200 VGE = 15V Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20V Tj = 25°C 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 100 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 0.52Ω Tj = 125°C Inductive Load tf 103 Tj = 25°C Tj = 125°C VGE = 0V 0 2 4 6 8 10 200 400 600 800 1000 1200

Single IGBT NFM-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Under the Chip Per Unit Base = Rth(j-c) = 0.34°C/W (IGBT) Rth(j-c) = 0.07°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 1000 2000 3000 4000 VCC = 600V EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 102 101 REVERSE RECOVERY CURRENT, Irr, (AMPERES) VCC = 600V VGE = ±15V RG = 0.52Ω Tj = 125°C Inductive Load VCC = 400V IC = 600A 103 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, E(on), E(off), (mJ/PULSE) 102 101 102 101 100 VCC = 600V VGE = ±15V RG = 0.52Ω Tj = 125°C Inductive Load VCC = 600V VGE = ±15V IC = 600A Tj = 125°C Inductive Load 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 103 100 101 101 102 100 103 101 102 100 102 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) Eon Eoff COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, Err, (mJ/PULSE) 102 101 102 101 100 VCC = 600V VGE = ±15V RG = 0.52Ω Tj = 125°C Inductive Load 103 REVERSE RECOVERY SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) Eon Eoff VCC = 600V VGE = ±15V IC = 600A Tj = 125°C Inductive Load GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, Err, (mJ/PULSE) 100 101 102 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) Irr trr