CM600HA24H POWEREX | Alldatasheet

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Single IGBTMOD™ H-Series Module

600 Amperes/1200 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.33 110.0 B 3.15 80.0 C 3.66 ±0.008 93.0 ±0.25 D 2.44 ±0.008 62.0 ±0.25 E 1.57 40.0 F 1.42 Max. 36.0 Max. G 1.14 29.0 H 1.00 Max. 25.5 Max. J 0.96 25.0 K 0.94 24.5 L 0.83 21.0 M 0.71 18.0 Dimensions Inches Millimeters N 0.69 17.5 P 0.61 15.5 Q 0.51 13.0 R 0.49 12.5 S 0.45 11.5 T 0.43 11.0 U 0.35 9.0 V M8 Metric M8 W 0.28 7.0 X 0.256 Dia. Dia. 6.50 Y M4 Metric M4 Z 0.12 3.04 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem- bly and thermal management. Features: h Low Drive Power h Low V CE(sat) h Discrete Super-Fast Recovery (135ns) Free-Wheel Diode h High Frequency Operation (20-25kHz) h Isolated Baseplate for Easy Heat Sinking Applications: h AC Motor Control h Motion/Servo Control h UPS h Welding Power Supplies h Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600HA-24H is a 1200V (V CES ), 600 Ampere Single IGBTMOD™ Power Module. Type Current Rating V CES Amperes Volts (x 50) CM 600 24 W H K F S J J Z E C E G U M C A R P B T ED Q L G N Y - THD (2 TYP.) V - THD (2 TYP.) X - DIA. (4 TYP.) E E C G

Single IGBTMOD™ H-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600HA-24H Units Junction Temperature T j –40 to 150 °C Storage Temperature T stg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1200 Volts Gate-Emitter Voltage V GES ±20 Volts Collector Current IC 600 Amperes Peak Collector Current I CM 1200* Amperes Diode Forward Current I F 600 Amperes Diode Forward Surge Current I FM 1200* Amperes Power Dissipation Pd 4100 Watts Max. Mounting Torque M8 Terminal Screws – 95 in-lb Max. Mounting Torque M6 Mounting Screws – 26 in-lb Module Weight (T ypical) – 560 Grams V Isolation VRMS 2500 Volts * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 2.0 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 60mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 600A, VGE = 15V – 2.5 3.4 Volts IC = 600A, VGE = 15V, Tj = 150°C – 2.25 – Volts Total Gate Charge Q G VCC = 600V, IC = 600A, VGS = 15V – 3000 – nC Diode Forward Voltage V FM IE = 600A, VGS = 0V – – 3.5 Volts Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies – – 120 nF Output Capacitance C oes VGE = 0V, VCE = 10V , f = 1MHz – – 42 nF Reverse Transfer Capacitance C res –– 2 4 n F Resistive Turn-on Delay Time t d(on) – – 300 ns Load Rise Time t r VCC = 600V, IC = 600A, – – 700 ns Switching Turn-off Delay Time t d(off) VGE1 = VGE2 = 15V, RG = 2.1Ω – – 450 ns Times Fall Time t f – – 350 ns Diode Reverse Recovery Time t rr IE = 600A, diE/dt = –1200A/µs – – 250 ns Diode Reverse Recovery Charge Q rr IE = 600A, diE/dt = –1200A/µs – 4.46 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c) Per IGBT – – 0.035 °C/W Thermal Resistance, Junction to Case R th(j-c) Per FWDi – – 0.06 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – – 0.035 °C/W

Single IGBTMOD™ H-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02468 1 0 600 200 VGE = 20V 15 12 Tj = 25oC 400 800 1000 1200 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 800 600 400 200 1200 1000 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 200 400 600 1000 1200 VGE = 15V Tj = 25°C Tj = 125°C 800 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 Tj = 25°C IC = 240A IC = 1200A IC = 600A 101 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 104 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C 103 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 103 102 101 100 VGE = 0V f = 1MHz 101 C ies C oes C res EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 trr Irr 103 102 101 REVERSE RECOVERY CURRENT, I rr, (AMPERES) di/dt = -1200A/µsec Tj = 25°C GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 800 1600 2400 3200 4000 IC = 600A 4800 VCC = 600V VCC = 400V COLLECTOR CURRENT I C , (AMPERES) SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 tr td(off) VCC = 600V VGE = ±15V R G = 2.1Ω Tj = 125°C td(on) tf

Single IGBTMOD™ H-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.03°C/W Zth = R th

  • (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.06°C/W Zth = R th
  • (NORMALIZED VALUE) 10-1 10-2 10-3