CM600HA-5F POWEREX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Single IGBTMOD™
600 Amperes /250 Volts
Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 108.0 B 3.66 93.0 C 0.63 16.0 D 0.30 7.5 E 0.69 17.5 F 1.14 29.0 G 0.79 20.0 H 0.94 24.0 J 0.31 7.9 K 0.24 6.0 L 2.44 62.0 M 1.89 48.0 Dimensions Inches Millimeters N 0.39 10.0 P 0.39 10.0 Q 0.51 13.0 R 0.33 8.5 S 1.42 36.0 T 1.02 25.8 U M6 Metric M6 V M4 Metric M4 W 0.22 5.5 X 0.79 20.0 Y 0.35 9.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration, with a reverse con- nected super-fast recovery free- wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: h Low Drive Power h Low V CE(sat) h Discrete Super-Fast Recovery Free-Wheel Diodes h High Frequency Operation (20-25 kHz) h Isolated Baseplate for Easy Heat Sinking Applications: h DC Chopper h Inverter h UPS h Forklift Ordering Information: Example: Select the complete nine digit module part number you desire from the table below - i.e. CM600HA-5F is a 250V (V CES ),
600 Ampere Single IGBTMOD™
Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 600 5 C G E E E E G C A B C F K J E D M N P Q R S U - THD. (2 TYP.)V -THD. (2 TYP.) W - DIA. (4 TYP.) y x T L H G
Trench Gate Design Single IGBTMOD™
600 Amperes/250 Volts
Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol CM600HA-5F Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E Short) V CES 250 Volts Gate-Emitter Voltage (C-E Short) V GES ±20 Volts Collector Current IC 600 Amperes Peak Collector Current I CM 1200 Amperes Diode Forward Current I F 600 Amperes Diode Forward Surge Current I FM 1200 Amperes Power Dissipation Pd 960 Watts Maximum Mounting Torque, M6 Terminal Screws — 26 in-lb Maximum Mounting Torque, M6 Mounting Screws — 26 in-lb Maximum Mounting Torque, M4 (G, E) Terminal Screws — 13 in-lb Module Weight (Typical) — 400 Grams Isolation Voltage, AC 1 minute, 60Hz V RMS 2500 Volts Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V — — 1.0 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 60mA, VCE = 10V 3.0 4.0 5.0 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 600A, VGE = 10V , — 1.2 1.7 Volts IC = 600A, VGE = 10V, Tj = 150°C — 1.1 — Volts Total Gate Charge Q G VCC = 50V, IC = 600A, VGS = 10V — 2200 — nC Diode Forward Voltage V FM IE = 600A, VGS = 0V — — 2.0 Volts Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C IES — — 165 nF Output Capacitance C OES VGE = 0V, VCE = 10V — — 7.5 nF Reverse Transfer Capacitance C RES — — 5.6 nF Resistive Turn-on Delay Time t d(on) — — 1000 ns Load Rise Time t r VCC = 50V , IC = 600A, — — 4000 ns Switching Turn-off Delay Time t d(off) VGE 1 = VGE 2 = 10V, R G = 4.2Ω , — — 1000 ns Times Fall Time t F Resistive Load — — 500 ns Diode Reverse Recovery Time t rr IE = 600A, diE/dt = -1200A/ms — — 300 ns Diode Reverse Recovery Charge Q rr IE = 600A, diE/dt = -1200A/ms — 9.5 — µC Thermal and Mechanical Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c) Per IGBT — — 0.13 °C/W Thermal Resistance, Junction to Case R th(j-c) Free Wheel Diode — — 0.19 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied — — 0.040 °C/W
Trench Gate Design Single IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 012345 400 VGE = 15V 5.5 5.25 5.0 Tj = 25oC 200 600 1200 1000 800 5.75 4.5 4.75 400 200 600 1200 1000 800 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 02468 1 0 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 400 600 1000 800 200 2.0 1.5 1.0 0.5 VGE = 15V Tj = 25°C Tj = 125°C 1200 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 5 10 15 Tj = 25°C IC = 240A IC = 1200A IC = 600A 101 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 104 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 100 101 102 103 VGE = 0V f = 1MHz 101 C ies C oes C res COLLECTOR CURRENT, I C , (AMPERES) SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 102 103101 102 104 td(off) td(on) tr VCC = 100V VGE = ±10V R G = 4.2Ω Tj = 125°C tf EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 trr Irr 103 102 101 REVERSE RECOVERY CURRENT, I rr, (AMPERES) di/dt = -1200A/µsec Tj = 25°C GATE CHARGE, Q G , (µC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0123 VCC = 100V VCC = 50V IC = 600A
Trench Gate Design Single IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-110-2 100 10110-3 100 10-1 10-2 10-3 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.13°C/W TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-1 100 10110-3 10-2 100 10-1 10-2 10-3 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.185°C/W