CM600HA-24A POWEREX | Alldatasheet

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Single IGBTMOD™ A-Series Module

600 Amperes/1200 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 108.0 B 3.66 93.0 C 0.63 16.0 D 0.30 7.5 E 0.69 17.5 F 1.14 29.0 G 0.79 20.0 H 0.94 24.0 J 0.31 7.9 K 0.24 6.0 L 2.44 62.0 M 1.89 48.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching ap pli ca tions. Each module con sists of one IGBT Transis- tor in a single confi guration with a reverse con nect ed super-fast recovery free-wheel diode. All components and in ter con nects are isolated from the heat sink ing baseplate, offering sim pli fi ed system assembly and ther mal management. Features: £ Low Drive Power £ Low V CE(sat) £ Discrete Super-Fast Re cov ery Free-Wheel Di ode £ Isolated Baseplate for Easy Heat Sinking Applications: £ DC Chopper £ Inverter £ UPS £ Forklift Ordering Information: Example: Select the complete part module number you desire from the table below - i.e. CM600HA-24A is a 1200V (VCES), 600 Am pere Single IGBTMOD™ Power Mod ule. Type Current Rating VCES Amperes Volts (x 50) CM 600 24 Dimensions Inches Millimeters N 0.39 10.0 P 0.39 10.0 Q 0.51 13.0 R 0.33 8.5 S 1.42 36.0 T 1.02 25.8 U M6 Metric M6 V M4 Metric M4 W 0.256 6.5 X 0.79 20.0 Y 0.35 9.0 C G E E E E G C A B C F K J E D M N P Q R S U - THD. (2 TYP.)V -THD. (2 TYP.) W - DIA. (4 TYP.) y x T L H G 30C0686.eps

Single IGBTMOD™ A-Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM600HA-24A Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (DC, TC = 80°C*) IC 600 Amperes Peak Collector Current ICM 1200 Amperes Emitter Current* (TC = 25°C) IE 600 Amperes Peak Emitter Current* IEM 1200 Amperes Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C) PC 3670 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb Mounting Torque, M4 G(E) Terminal — 15 in-lb Weight — 480 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 6.0 7.0 8.0 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 600A, VGE = 15V, Tj = 25°C — 2.1 3.0 Volts I C = 600A, VGE = 15V, Tj = 125°C — 2.4 — Volts Total Gate Charge QG V CC = 600V, IC = 600A, VGE = 15V — 3000 — nC Emitter-Collector Voltage VEC IE = 600A, VGE = 0V — — 3.8 Volts Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies — — 105 nf Output Capacitance Coes VCE = 10V, VGE = 0V — — 9 nf Reverse Transfer Capacitance Cres — — 2.0 nf Inductive Turn-on Delay Time t d(on) — — 660 ns Load Rise Time tr VCC = 600V, IC = 600A, — — 190 ns Switch Turn-off Delay Time t d(off) V GE1 = VGE2 = 15V, RG = 0.52Ω, — — 700 ns Time Fall Time tf Inductive Load — — 350 ns Diode Reverse Recovery Time* trr Switching Operation, — — 250 ns Diode Reverse Recovery Charge*** Qrr IE = 600A — 19.0 — µC *TC, Tf measured point is just under the chips. Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(max) rating. *Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-24A Single IGBTMOD™ A-Series Module Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case* R th(j-c)Q Per IGBT — — 0.034 °C/W Thermal Resistance, Junction to Case* R th(j-c)D Per FWDi — — 0.053 °C/W Contact Thermal Resistance Rth(c-f) Thermal Grease Applied — 0.02 — °C/W External Gate Resistance RG 0.52 — 7.8 Ω *TC, Tf measured point is just under the chips. COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 103 102 101 100 10-1 1010 1 3 42 5 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 104 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 8 10 1412 16 18 20 Tj = 25°C COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 300 900 1200 VGE = 15V Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres IC = 1200A IC = 600A IC = 240A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 2 4 6 8 1 0 300 VGE = 20V Tj = 25oC 600 900 1200 600 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = 15V RG = 0.52Ω Tj = 125°C Inductive Load tf 103 Tj = 25°C Tj = 125°C

Single IGBTMOD™ A-Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.034°C/W (IGBT) Rth(j-c) = 0.051°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 900 1800 2700 45003600 VCC = 600V EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY, Irr, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 VCC = 600V VGE = 15V RG = 0.52Ω Tj = 25°C Inductive Load VCC = 400V IC = 600A 103 VCC = 600V VGE = 15V RG = 0.52Ω Tj = 125°C Inductive Load COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) SWITCHING LOSS, (mJ/PULSE) 102 101 102 101 100 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) Irr trr VCC = 600V VGE = 15V IC = 600A Tj = 125°C Inductive Load GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, (mJ/PULSE) 103 0 6 842 102 101 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) Eon Eoff Err Eon Eoff Err