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Chopper IGBTMOD™ NFH-Series Module

600 Amperes/600 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 110/12 Rev. 0 Description: Powerex Chopper IGBTMOD™ Modules are designed for use in switching applications. Each mod- ule consists of one IGBT Transistor having a reverse-connected super- fast recovery free-wheel diode and an anode-collector connected super-fast recovery free-wheel diode. All components and inter- connects are isolated from the heat sinking base plate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery (150ns) Free-Wheel Diode £ High Frequency Operation (15-20kHz) £ Isolated Baseplate for Easy Heat Sinking Applications: £ DC Motor Control £ Boost Regulator Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM600E3U-12NFH is a 600V (VCES), 600 Ampere Chopper IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 600 12 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 108.0 B 2.44 62.0 F 0.98 25.0 G 0.24 6.0 H 0.59 15.0 J 0.7854 19.95 K 0.55 14.0 L 0.26 Dia. 6.5 Dia. M M6 Metric M6 N 1 .022 25.95 Dimensions Inches Millimeters P 0.71 18.0 Q 0.28 7 .0 R 0.874 22.2 S 0.30 7 .5 T 0.94 24.0 U 0.11 2.8 V 0.16 4.0 W 0.33 8.5 X 0.46 11 .75 Y 0.012 ~ 0 0.3 ~ 0 Z 0.85 21 .5 AA 0.69 17 .5 A W F TF N AA J G Q Q G HEB L (4 PLACES) D M (3 PLACES) CLAMP DIODEFREE WHEEL DIODE KKK P P P QQ V Z Y X V SS U C S R C2E1 E2 C1 E1 (NC) G1 (NC) C1E2C2E1 Tr2 Di2 Di1 LABEL

Chopper IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 10/12 Rev. 02 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600E3U-12NFH Units Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current IC 600 Amperes Collector Current (Pulse)*2 I CM 1200 Amperes Emitter Current (TC = 25°C)*6 I E*1

30 Amperes

Emitter Current (Pulse)*2 I EM*1

60 Amperes

Maximum Power Dissipation (TC = 25°C)*6 P C*3

1420 Watts

Maximum Power Dissipation (TC' = 25°C)*8 P C'*3

2460 Watts

Repetitive Peak Reverse Voltage (Clamp Diode Part) VRRM 600 Volts Forward Current (TC = 25°C, Clamp Diode Part) IF 600 Amperes Forward Current (Pulse, Clamp Diode Part)*2 I FM 1200 Amperes Isolation Voltage (Charged Part to Baseplate, AC 1 min.) Viso 2500 Volts Junction Temperature Tj -40 ~ +150 °C Storage Temperature Tstg -40 ~ +125 °C *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *3 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *6 Case temperature (TC) measured point is baseplate side. *8 Case temperature (Ts) measured point is just under the chips as shown in the following figure. 33.8 48.6 72.7 36.2 70.4 81.0 Di1 TC MEASURED POINT Di1 Di1Tr2 Tr2 Di2 20.4 33.235.4 15.4 LABEL SIDE Each mark points to the center position of each chip. Tr2: IGBT Di2: FWDi Di1: Clamp Diode 0 0

Chopper IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 10/12 Rev. 0 3 Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Current IGES ±V GE = VGES, VCE = 0V – – 1 µA Repetitive Peak Reverse Current IRRM V RM = VRRM, Clamp Diode Part – – 1 mA Gate-Emitter Threshold Voltage VGE(th) I C = 60mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 600A, VGE = 15V, Tj = 25°C*3 – 2.0 2.7 Volts I C = 600A, VGE = 15V, Tj = 125°C*3 – 1 .95 – Volts Forward Transfer Admittance |yfs| I C = 600A, VCE = 10V*3 420 – – S Input Capacitance Cies – – 166 nF Output Capacitance Coes V GE = 0V, VCE = 10V – – 11 nF Reverse Transfer Capacitance Cres – – 6.0 nF Total Gate Charge QG V CC = 300V, IC = 600A, VGE = 15V – 3720 – nC Turn-on Delay Time td(on) V CC = 300V, – – 800 ns Turn-on Rise Time tr I C = 600A, IE = 30A, – – 400 ns Turn-off Delay Time td(off) V GE1 = VGE2 = 15V, – – 1100 ns Turn-off Fall Time tf R G = 2.0Ω, – – 200 ns Reverse Recovery Time trr*1 Inductive Load – – 110 ns Reverse Recovery Charge Qrr*1 Switching Operation – 0.08 – µC Emitter-Collector Voltage VEC*1 I E = 30A, VGE = 0V – – 2.8 Volts Forward Voltage Drop VFM I F = 600A, Clamp Diode Part – – 2.5 Volts Reverse Recovery Time trr Clamp Diode Part – – 200 ns Reverse Recovery Charge Qrr V CC = 300V, IF = 600A, – 10 – µC V GE1 = VGE2 = 15V, RG = 2.0Ω, Inductive Load Switching Operation External Gate Resistance RG 0.2 – 2 Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *3 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.

Chopper IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 10/12 Rev. 04 Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q IGBT Part*6 – – 0.088 °C/W Thermal Resistance, Junction to Case R th(j-c)R Clamp Diode Part*6 – – 0.08 °C/W Contact Thermal Resistance Rth(c-s) Case to Heatsink,Per 1/2 Module, – 0.04 – °C/W Thermal Grease Applied*7 Thermal Resistance, Junction to Case R th(j-c')Q IGBT Part*8 – – 0.053 °C/W Thermal Resistance, Junction to Case R th(j-c')R Clamp Diode Part*8 – – 0.052 °C/W Mechanical Characteristics Characteristics Symbol Test Conditions Min. Typ. Max. Units Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb M s Mounting Holes, M6 Screw 31 35 40 in-lb Weight – 400 – Grams *6 Case temperature (TC) measured point is baseplate side. *7 Typical value is measured by using thermally conductive grease of λ = 0.9 W/(m•K). *8 Case temperature (Ts) measured point is just under the chips as shown in the following figure. 33.8 48.6 72.7 36.2 70.4 81.0 Di1 TC MEASURED POINT Di1 Di1Tr2 Tr2 Di2 20.4 33.235.4 15.4 LABEL SIDE Each mark points to the center position of each chip. Tr2: IGBT Di2: FWDi Di1: Clamp Diode 0 0