CM600E2Y-34H POWEREX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Feb. 2000 MITSUBISHI HVIGBT MODULES CM600E2Y-34H HIGH POWER SWITCHING USE INSULATED TYPE l Insulated Type l 1-elements in a pack (for brake) APPLICATION DC choppers, Dynamic braking choppers. CM600E2Y-34H HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules C1CM G1 C2 3 - M4 NUTS 4 - M8 NUTS 114 31.5 130 11.85 55.2 11.5 6 - f 7 MOUNTING HOLES 57–0.25 57–0.25 124–0.25 140 LABEL CIRCUIT DIAGRAM
Feb. 2000 MITSUBISHI HVIGBT MODULES CM600E2Y-34H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) MAXIMUM RATINGS (Tj = 25°C) VGE = 0V VCE = 0V TC = 25°C Pulse (Note 1) T C = 25°C Pulse (Note 1) T C = 25°C, IGBT part Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 T ypical value 1700 ±20 600 1200 600 1200 6200 –40 ~ +150 –40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 V V A A A A W V N·m N·m N·m kg Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass Collector current Emitter current Symbol Item Conditions Unit Ratings V V V CE = VCES , VGE = 0V VGE = VGES , VCE = 0V Tj = 25°C Tj = 125°C VCC = 850V, IC = 600A, VGE = 15V VCC = 850V, IC = 600A VGE1 = VGE2 = 15V RG = 3.3Ω Resistive load switching operation I E = 600A, VGE = 0V IE = 600A die / dt = –1200A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Per 1/2 module) IF = 600A, Clamp diode part IF = 600A dif / dt = –1200A / µs, Clamp diode part Junction to case, Clamp diode part Case to fin, conductive grease applied (Per 1/2 module) IC = 60mA, VCE = 10V IC = 600A, VGE = 15V (Note 4) VCE = 10V VGE = 0V 0.5 3.58 1.20 1.50 2.00 0.60 3.12 2.00 0.020 0.064 3.25 2.00 0.064 mA µA nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W V µs µC K/W K/W 2.75 3.30 10.0 3.8 3.3 2.40 100 0.016 2.50 100 0.016 5.5 4.5 6.5 Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Contact thermal resistance Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Min T yp Max ICES IGES C ies C oes C res Q G td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Q rr (Note 2) R th(j-c)Q R th(j-c)R R th(c-f) VFM trr Q rr R th(j-c) R th(c-f) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Item Conditions VGE(th) VCE(sat) Limits Unit Thermal resistance HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 2. IE, VEC , trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Feb. 2000 MITSUBISHI HVIGBT MODULES CM600E2Y-34H HIGH POWER SWITCHING USE INSULATED TYPEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL ) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) TRANSFER CHARACTERISTICS (TYPICAL ) COLLECTOR CURRENT I C (A) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) COLLECTOR CURRENT I C (A) 800 1000 1200 400 200 0 10 02 468 600 800 1000 1200 400 200 600 20048 1 2 1 6 02 0 16 12 8 4 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL ) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL ) EMITTER CURRENT I E (A) EMITTER-COLLECTOR VOLTAGE V EC (V) 05 4 3 2 1 102 104 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL ) Tj = 25°C Tj = 25°C VGE = 13V VGE = 11V VGE = 12V VGE = 10V VGE = 9V VGE = 8V VGE = 7V VGE = 14V VGE = 15V VGE = 20V IC = 1200A IC = 600A IC = 240A VCE = 10V Tj = 25°C Tj = 125°C Tj = 25°C 101 2310–1 571 00 23 57 1 01 23 57 1 02 103 CAPACITANCE VS. V CE (TYPICAL ) CAPACITANCE C ies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE V CE (V) C ies C oes C res VGE = 0V, Tj = 25°C C ies, C oes : f = 100kHz C res : f = 1MHz 0 200 400 600 800 1000 1200 VGE = 15V Tj = 25°C Tj = 125°C
Feb. 2000 MITSUBISHI HVIGBT MODULES CM600E2Y-34H HIGH POWER SWITCHING USE INSULATED TYPEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 71 0 10–1 23 5 7 1 0 3 23 55 71 0 10–1 23 5 7 1 0 3 23 55 td(off) VCC = 850V, VGE = –15V R G = 3.3Ω , Tj = 125°C Inductive load td(on) tr tf HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL ) SWITCHING TIMES (µs) COLLECTOR CURRENT I C (A) VCC = 850V, Tj = 25°C Inductive load V GE = –15V, RG = 3.3Ω trr Irr REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL ) REVERSE RECOVERY TIME t rr (µs) EMITTER CURRENT I E (A) REVERSE RECOVERY CURRENT I rr (A) 10–2 10–3 10–2 10–1 100 101 23 57 23 57 23 57 Single Pulse T C = 25°C R th(j – c) = 0.032°C/W (Per 1/2 module) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th(j – c) TIME (s) 10–2 10–3 10–2 10–1 100 101 23 57 23 57 23 57 NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th(j – c) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 0 4000 5000 3000 0 1000 2000 VGE – GATE CHARGE (TYPICAL ) GATE-EMITTER VOLTAGE V GE (V) GATE CHARGE Q G (nC ) VCC = 850V IC = 600A Single Pulse T C = 25°C R th(j – c) = 0.080°C/W (Per 1/2 module)