CM600DY-24A

CM600DY-24A POWEREX | Alldatasheet

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Dual IGBTMOD™ A-Series Module

600 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Outline Drawing and Circuit Diagram 1Rev. 11/07 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each tran- sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter- connects are isolated from the heat sinking baseplate, offering simpli- fied system assembly and thermal management. Features: £ Low Drive Power £ Low V CE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you de- sire from the table below -i.e. CM600DY-24A is a 1200V (VCES),

600 Ampere Dual IGBTMOD™

Amperes Volts (x 50) CM 600 24 A W FF B N J L (4 PLACES) D M NUTS (3 PLACES) G G H KKK PP P T THICK U WIDTHQQ VC S R C1E2C2E1 LABEL C2E1 E2 C1 E Dimensions Inches Millimeters A 4.33 110.0 B 3.15 80.0 F 0.98 25.0 G 0.24 6.0 H 0.59 15.0 J 0.81 20.5 K 0.55 14.0 L 0.26 Dia. Dia. 6.5 Dimensions Inches Millimeters M M6 Metric M6 N 1.18 30.0 P 0.71 18.0 Q 0.28 7.0 R 0.83 21.2 S 0.33 8.5 T 0.02 0.5 U 0.110 2.8 V 0.16 4.0 W 0.85 21.5

Dual IGBTMOD™ A-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 2 Rev. 11/07 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM600DY-24A Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (DC, TC = 80°C*) IC 600 Amperes Peak Collector Current ICM 1200 Amperes Emitter Current* (TC = 25°C) IE 600 Amperes Peak Emitter Current* IEM 1200 Amperes Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C) PC 3670 Watts Mounting Torque, M6 MainTerminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb Weight — 580 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES V CE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES V GE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) I C = 60mA, VCE = 10V 6.0 7.0 8.0 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 600A, VGE = 15V, Tj = 25°C — 2.1 3.0 Volts I C = 600A, VGE = 15V, Tj = 125°C — 2.4 — Volts Total Gate Charge QG V CC = 600V, IC = 600A, VGE = 15V — 2700 — nC Emitter-Collector Voltage VEC I E = 600A, VGE = 0V — — 3.8 Volts Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies — — 94 nf Output Capacitance Coes V CE = 10V, VGE = 0V — — 8.0 nf Reverse Transfer Capacitance Cres — — 1.8 nf Inductive Turn-on Delay Time t d(on) — — 660 ns Load Rise Time tr V CC = 600V, IC = 600A, — — 190 ns Switch Turn-off Delay Time t d(off) V GE1 = VGE2 = 15V, RG = 0.52Ω, — — 700 ns Time Fall Time tf Inductive Load — — 350 ns Diode Reverse Recovery Time trr Switching Operation, — — 250 ns Diode Reverse Recovery Charge** Qrr I E = 600A — 19 — µC *TC, Tf measured point is just under the chips. Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(max) rating. *Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Dual IGBTMOD™ A-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 3Rev. 11/07 Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case* R th(j-c)Q Per IGBT 1/2 Module — — 0.034 °C/W Thermal Resistance, Junction to Case* R th(j-c)D Per FWDi 1/2 Module — — 0.062 °C/W Contact Thermal Resistance Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.018 — °C/W External Gate Resistance RG 0.52 — 7.8 Ω *TC, Tf measured point is just under the chips. COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE (TYPICAL) 100 102 103 101 102 100 103 102 10-1 101 0 1 3 4 2 5 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 8 10 14 12 16 18 20 Tj = 25°C COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 300 900 1200 VGE = 15V Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres IC = 1200A IC = 600A IC = 240A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 2 4 6 8 10 300 VGE = 20V Tj = 25°C 600 900 1200 600 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 101 102 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = 15V RG = 0.52Ω Tj = 125°C Inductive Load tf 103 Tj = 25°C Tj = 125°C

Dual IGBTMOD™ A-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 4 Rev. 11/07 0 1000 3000 40002000 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.034°C/W (IGBT) R th(j-c) = 0.062°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE VCC = 600V EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 102 101 REVERSE RECOVERY CURRENT, Irr, (AMPERES) VCC = 600V VGE = 15V RG = 0.52Ω Tj = 25°C Inductive Load VCC = 400V IC = 600A 103 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 103 101 102 102 101 VCC = 600V VGE = 15V RG = 0.52Ω Tj = 125°C Inductive Load C Snubber at Bus VCC = 600V VGE = 15V IC = 600A Tj = 125°C Inductive Load C Snubber at Bus 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 103 10-1 100 102 101 101 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) ESW(on) ESW(off) Irr trr ESW(on) ESW(off) GATE RESISTANCE, RG, (Ω) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 10-1 100 101 100 101 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 101 102 101 100 103 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) VCC = 600V VGE = 15V IC = 600A Tj = 125°C Inductive Load C Snubber at Bus VCC = 600V VGE = 15V RG = 0.52Ω Tj = 125°C Inductive Load C Snubber at Bus Err Err