CM600DY-12NF

CM600DY-12NF POWEREX | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Dual IGBTMOD™ NF-Series Module

600 Amperes/600 Volts

Outline Drawing and Circuit Diagram Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 1Rev. 09/09 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each tran- sistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heatsinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600DY -12NF is a 600V (VCES), 600 Ampere Dual IGBTMOD™ Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 600 12 A W FF B N J L (4 PLACES) D M NUTS (3 PLACES) G G H KKK P P P T THICK U WIDTHQQ VC S R C1E2C2E1 TC MEASURED POINT (BASEPLATE) LABEL C2E1 E2 C1 E Dimensions Inches Millimeters A 4.33 110.0 B 3.15 80.0 F 0.98 25.0 G 0.24 6.0 H 0.59 15.0 J 0.81 20.5 K 0.55 14.0 L 0.26 Dia. Dia. 6.5 Dimensions Inches Millimeters M M6 Metric M6 N 1 .18 30.0 P 0.71 18.0 Q 0.28 7 .0 R 0.83 21 .2 S 0.33 8.5 T 0.02 0.5 U 0.110 2.8 V 0.16 4.0 W 0.85 21 .5

Dual IGBTMOD™ NF-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 Rev. 09/09 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600DY-12NF Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 600 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current*** (DC, TC´ = 89°C) IC 600 Amperes Peak Collector Current ICM 1200* Amperes Emitter Current (TC = 25°C) IE 600 Amperes Emitter Surge Current IEM 1200* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1130 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb Weight — 580 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) I C = 60mA, VCE = 10V 5.0 6.0 7 .5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C — 1 .7 2.2 Volts IC = 600A, VGE = 15V, Tj = 125°C — 1 .7 — Volts Total Gate Charge QG VCC = 300V, IC = 600A, VGE = 15V — 2400 — nC Emitter-Collector Voltage VEC I E = 600A, VGE = 0V — — 2.6 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies — — 90 nf Output Capacitance Coes V CE = 10V, VGE = 0V — — 11 .0 nf Reverse Transfer Capacitance Cres — — 3.6 nf Inductive Turn-on Delay Time td(on) — — 500 ns Load Rise Time tr V CC = 300V, IC = 600A, — — 300 ns Switch Turn-off Delay Time td(off) V GE1 = VGE2 = 15V, RG = 4.2Ω, — — 750 ns Time Fall Time tf Inductive Load — — 300 ns Diode Reverse Recovery Time trr Switching Operation, — — 250 ns Diode Reverse Recovery Charge** Qrr I E = 600A — 8.7 — µC *Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(max) rating. Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *TC´ measured point is just under the chips. If this value is used, R th(f-a) should be measured just under the chips.

Dual IGBTMOD™ NF-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 3Rev. 09/09 Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, TC Reference — — 0.11 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference — — 0.18 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)’Q Per IGBT 1/2 Module, — — 0.046 °C/W T C Reference Point Under Chips Contact Thermal Resistance Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.02 — °C/W External Gate Resistance RG 1 .0 — 10 Ω COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 103 102 101 100 104 103 102 101 1010 1 3 42 5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 8 10 1412 16 18 20 Tj = 25°C COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 300 900 1200 VGE = 15V Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres IC = 1200A IC = 600A IC = 240A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 2 4 6 8 10 300 VGE = 20V Tj = 25oC 600 900 1200 600 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 100 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 125°C Inductive Load tf 103 Tj = 25°C Tj = 125°C

Dual IGBTMOD™ NF-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 Rev. 09/09 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.11°C/W (IGBT) R th(j-c) = 0.18°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 700 1400 2100 35002800 VCC = 300V EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 102 101 REVERSE RECOVERY CURRENT, Irr, (AMPERES) VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 25°C Inductive Load VCC = 200V IC = 600A 103 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 101 102 101 100 VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 125°C Inductive Load C Snubber at Bus VCC = 300V VGE = ±15V IC = 600A Tj = 125°C Inductive Load C Snubber at Bus 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 100 101 100 101 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) ESW(on) ESW(off) ESW(on) ESW(off) Irr trr