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Dual IGBTMOD™ NFH-Series Module
600 Amperes/1200 Volts
107/11 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.33 110.0 B 3.15 80.0 F 0.83 21 .2 G 0.28 7 .0 H 0.24 6.0 J 0.59 15.0 K 0.55 14.0 L 0.35 9.0 M 0.33 8.5 N 0.69 17 .5 P 0.85 21 .5 Dimensions Inches Millimeters Q 0.98 25.0 R 1 .23 31 .4 S M6 Metric M6 T 0.26 Dia. 6.5 Dia. U 0.4 10.0 V 0.16 4.0 W 0.87 22.2 X 0.72 18.25 Y 0.36 9.25 Z 0.71 18.0 AA 0.11 2.8 AB 0.29 7 .5 AC 0.21 5.3 AD 0.47 12.0 H H V G2E2E1G1 C2E1 C1 X B W E U Y A D PQQ Z K G AC AD Z Z C F MAB AA V M M L L G S - NUTS (3 TYP) T - (4 TYP) LABEL C2E1 E2 Tr2 Tr1 Di1 Di2 K K J N R Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1. 2 Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem- bly and thermal management. Features: £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600DU-24NFH is a 1200V (VCES), 600 Ampere Dual IGBTMOD™ Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 600 24
Dual IGBTMOD™ NFH-Series Module 2 07/11 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600DU-24NF Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (TC = 25°C) IC 600* Amperes Peak Collector Current ICM 1200* Amperes Emitter Current** (TC = 25°C) IE 600* Amperes Peak Emitter Current** IEM 1200* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1550 Watts Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 3700 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb Weight — 580 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate Leakage Current IGES V GE = VGES, VCE = 0V — — 2.0 µA Gate-Emitter Threshold Voltage VGE(th) I C = 60mA, VCE = 10V 4.5 6.0 7 .5 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 600A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts I C = 600A, VGE = 15V, Tj = 125°C — 5.0 — Volts Total Gate Charge QG V CC = 600V, IC = 600A, VGE = 15V — 2700 — nC Emitter-Collector Voltage VEC I E = 600A, VGE = 0V — — 3.5 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies — — 95 nF Output Capacitance Coes V CE = 10V, VGE = 0V — — 8.0 nF Reverse Transfer Capacitance Cres — — 1 .8 nF Inductive Turn-on Delay Time t d(on) — — 400 ns Load Rise Time tr V CC = 600V, IC = 600A, — — 120 ns Switch Turn-off Delay Time t d(off) V GE1 = VGE2 = 15V, RG = 0.52Ω, — — 700 ns Time Fall Time tf Inductive Load — — 150 ns Diode Reverse Recovery Time trr Switching Operation, — — 250 ns Diode Reverse Recovery Charge** Qrr I E = 600A — 28 — µC * Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dual IGBTMOD™ NFH-Series Module 307/11 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT 1/2 Module, T C Reference — — 0.083 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)D Per FWDi 1/2 Module, T C Reference — — 0.15 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)'Q Per IGBT 1/2 Module, — — 0.034 °C/W T C Reference Point Under Chips Thermal Resistance, Junction to Case R th(j-c)'D Per FWDi 1/2 Module, T C Reference — — 0.06 °C/W T C Reference Point Under Chips Contact Thermal Resistance Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.02 — °C/W External Gate Resistance RG 0.52 — 5.2 Ω COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 103 102 101 100 10-1 1010 1 3 42 5 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 104 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 8 10 1412 16 18 20 Tj = 25oC GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 1200 1000 800 600 0 5 15 400 200 VGE = 10V Tj = 25oC Tj = 125oC Tj = 25oC Tj = 125oC VGE = 0V Cies Coes Cres IC = 1200A IC = 600A IC = 240A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 2 4 6 8 10 200 VGE = 20V Tj = 25oC 400 600 1200 800 1000 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 200 600 1200800 1000 VGE = 15V Tj = 25oC Tj = 125oC 400 10-1
Dual IGBTMOD™ NFH-Series Module 4 07/11 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.083°C/W (IGBT) R th(j-c) = 0.15°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 1000 2000 40003000 VCC = 600V EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 102 101 REVERSE RECOVERY CURRENT, Irr, (AMPERES) VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive Load VCC = 400V IC = 600A 103 Irr trr COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 100 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load tf 103 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 101 102 101 100 VCC = 600V VGE = ±15V RG = 0.52Ω Tj = 125°C Inductive Load C Snubber at Bus 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) ESW(on) ESW(off) GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 10-1 100 101 100 VCC = 600V VGE = ±15V IC = 600A Tj = 125°C Inductive Load C Snubber at Bus 101 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) ESW(on) ESW(off) GATE RESISTANCE, RG, (Ω) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 10-1 100 101 100 VCC = 600V VGE = ±15V IE = 600A Tj = 125°C Inductive Load C Snubber at Bus 101 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 101 102 101 100 VCC = 600V VGE = ±15V RG = 0.52Ω Tj = 125°C Inductive Load C Snubber at Bus 103 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) Err Err