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Dual IGBTMOD™ NFH-Series Module

600 Amperes/600 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 02/13 Rev. 3 Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low VCE(sat) £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600DU-12NFH is a 600V (VCES), 600 Ampere Dual IGBTMOD™ Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 600 12 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.33 110.0 B 3.15 80.0 F 0.83 21 .2 G 0.28 7 .0 H 0.24 6.0 J 0.59 15.0 K 0.55 14.0 L 0.35 9.0 M 0.33 8.5 N 0.69 17 .5 P 0.85 21 .5 Dimensions Inches Millimeters Q 0.98 25.0 R 1 .23 31 .4 S M6 Metric M6 T 0.26 Dia. 6.5 Dia. U 0.4 10.0 V 0.16 4.0 W 0.87 22.2 X 0.72 18.25 Y 0.36 9.25 Z 0.71 18.0 AA 0.11 2.8 AB 0.29 7 .5 AC 0.21 5.3 AD 0.47 12.0 H H V G2E2E1G1 C2E1 C1 X B W E U Y A D PQQ Z K G AC AD Z Z C F MAB AA V M M L L G S - NUTS (3 TYP) T - (4 TYP) LABEL C2E1 E2 Tr2 Tr1 Di1 Di2 K K J N R Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1. 2

Dual IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 02/13 Rev. 3 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Item Symbol Rating Units Collector-Emitter Voltage (G-E Short-circuited) VCES 600 Volts Gate-Emitter Voltage (C-E Short-circuited) VGES ±20 Volts Collector Current (Operation)*5 I C 600 Amperes Collector Current (Operation)*5 I C(rms) 400 Amperes Collector Current (Pulse, Repetitive)*4 I CRM 1200 Amperes Total Power Dissipation (TC = 25°C)*2,*5 P tot 1130 Watts Total Power Dissipation (TC' = 25°C)*3,*5 P tot' 2350 Watts Emitter Current (Free Wheeling Diode Forward Current, Operation)*5 I E*1 600 Amperes Emitter Current (Free Wheeling Diode Forward Current, Operation)*5 I E(rms)*1 400 Amperes Emitter Current (Free Wheeling Diode Forward Current, Operation, Pulse, Repetitive)*4 I ERM*1 1200 Amperes Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 min.) VISO 2500 Volts *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. *3 Case temperature (TC') and heatsink temperature (Ts') is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance {Rth(s-a)} should be measured just under the chips. *4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *5 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. 29.4 44.2 77 .2 29.4 44.2 64.8 32.0 44.4 27 .3 42.1 G2E2E1G1 C2E1 C1E2 0 0 LABEL SIDE Each mark points to the center position of each chip. Tr1 / Tr2 : IGBT Di1 / Di2 : FWDi Di1 Di1 Tr1 Tr1Di2Di2 Tr2Tr2

Dual IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 02/13 Rev. 3 Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate-Emitter Leakage Current IGES ±V GE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) I C = 60mA, VCE = 10V 5.0 6.0 7 .0 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 600A, VGE = 15V, Tj = 25°C*6 — 2.0 2.7 Volts I C = 600A, VGE = 15V, Tj = 125°C*6 — 1 .95 — Volts Input Capacitance Cies — — 166 nF Output Capacitance Coes V CE = 10V, VGE = 0V — — 11 nF Reverse Transfer Capacitance Cres — — 6.0 nF Gate Charge QG V CC = 300V, IC = 600A, VGE = 15V — 3720 — nC Turn-on Delay Time td(on) — — 650 ns Rise Time tr V CC = 300V, IC = 600A, — — 250 ns Turn-off Delay Time td(off) V GE = ±15V, RG = 2.0Ω, — — 800 ns Fall Time tf Inductive Load Switching Operation — — 150 ns Emitter-Collector Voltage VEC*1 I E = 600A, VGE = 0V*6 — 2.0 2.6 Volts Reverse Recovery Time trr*1 V CC = 300V, IE = 600A, VGE = ±15V — — 200 ns Reverse Recovery Charge Qrr*1 R G = 2.0Ω, Inductive Load — 11 — µC Turn-on Switching Energy per Pulse Eon V CC = 300V, IC = IE = 600A, — 11 — mJ Turn-off Switching Energy per Pulse Eoff V GE = ±15V, RG = 2.0Ω, — 27 — mJ Reverse Recovery Energy per Pulse Err*1 T j = 125°C, Inductive Load — 6.3 — mJ Internal Gate Resistance rg Per Switch — 0.8 — Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *6 Pulse width and repetition rate should be such as to cause negligible temperature rise.

Dual IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 02/13 Rev. 3 Thermal Resistance Characteristics Thermal Resistance, Junction to Case*2 R th(j-c)Q Per IGBT — — 0.11 K/W Thermal Resistance, Junction to Case*2 R th(j-c)D Per FWDi — — 0.12 K/W Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied — 0.02 — K/W Case to Heatsink*2 (Per 1 Module)*7 Thermal Resistance, Junction to Case*3 R th(j-c')Q Per IGBT — — 0.053 K/W Thermal Resistance, Junction to Case*3 R th(j-c')D Per FWDi — — 0.078 K/W Mechanical Characteristics Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb M s Mounting to Heatsink, M6 Screw 31 35 40 in-lb Weight m — 580 — Grams Flatness of Baseplate ec On Centerline X, Y*8 -100 — + 100 µm Recommended Operating Conditons, Ta = 25°C (DC) Supply Voltage VCC Applied Across C1-E2 — 300 400 Volts Gate (-Emitter Drive) Voltage VGE(on) Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts External Gate Resistance RG Per Switch 1 .0 — 10 Ω *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Case temperature (TC') and heatsink temperature (Ts') is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance {Rth(s-a)} should be measured just under the chips. *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. 29.4 44.2 77 .2 29.4 44.2 64.8 32.0 44.4 27 .3 42.1 G2E2E1G1 C2E1 C1E2 0 0 LABEL SIDE Each mark points to the center position of each chip. Tr1 / Tr2 : IGBT Di1 / Di2 : FWDi Di1 Di1 Tr1 Tr1Di2Di2 Tr2Tr2 X BOTTOM – CONCAVE 3 mm + CONVEX – CONCAVE + CONVEX BOTTOM BOTTOM LABEL SIDE Y

Dual IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 02/13 Rev. 3 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 103 102 101 100 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 102 104 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 642 8 10 1412 16 18 20 Tj = 25°C Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres IC = 1200A IC = 600A IC = 240A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 1 2 3 4 5 200 VGE = 20V 8.5 9.5 7.5 Tj = 25°C 400 600 1200 800 1000 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3.0 2.0 1.5 1.0 0 200 600 2.5 0.5 1200800 1000 VGE = 15V Tj = 25°C Tj = 125°C 400 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 101 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr tf VCC = 300V VGE = ±15V RG = 2.0Ω Tj = 125°C Inductive Load SWITCHING TIME, (ns) GATE RESISTANCE, RG, (/uni03A9) 104 10-1 100 101 103 102 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr tf VCC = 300V VGE = ±15V IC = 600A Tj = 125°C Inductive Load SWITCHING TIME, (ns) GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 1000 2000 3000 4000 5000 VCC = 300V VCC = 200V IC = 600A Tj = 25°C EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY, Irr, (AMPERES), trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 VCC = 300V VGE = ±15V RG = 2.0Ω Tj = 25°C Inductive Load Irr trr

Dual IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 02/13 Rev. 3 102 101 102 101 100 VCC = 300V VGE = ±15V RG = 2.0Ω Tj = 125°C Inductive Load 103 102 10-1 100 101 101 100 VCC = 300V VGE = ±15V IC = 600A Tj = 125°C Inductive Load 102 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC' = 25°C Per Unit Base = Rth(j-c') = 0.053°C/W (IGBT) R th(j-c') = 0.078°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Eon Eoff Err Eon Eoff Err SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) GATE RESISTANCE, RG, (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)