CM50TU-34KA

CM50TU-34KA POWEREX | Alldatasheet

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Six IGBTMOD™ KA-Series Module

50 Amperes/1700 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dimensions Inches Millimeters A 4.21 107.0 B 4.02 102.0 F 0.16 4.0 G 1.02 26.0 H 0.31 8.1 J 0.91 23.0 K 0.47 12.0 L 0.43 11.0 Dimensions Inches Millimeters M 0.57 14.4 N 0.85 21.7 P 0.67 17.0 Q 1.91 48.5 R 0.15 3.75 SM 5 M 5 T 0.26 Dia. 6.5 Dia. V 0.03 0.8 W 0.02 0.5 X 0.110 2.79 Description: Pow erex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low V CE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ W elding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM50TU-34KA is a 1700V (V CES ), 50 Ampere Six- IGBT IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 50 34 G VP EU N U G U N G U PE U P N CM S - NUTS (5 TYP) G W N V W G VNE VNE W N EW PEVPG W P P T - (4 TYP.) TC Measuring Point TC Measuring Point EU N N G U N U EU P EVN G VN V EVP G U P P G VP EW N G W N W EW P G W P W - THICK x X - WIDE TAB (12 PLACES) V J D J L LN N A L C H GF K N EB L K J Q R M P NL L R Outline Drawing and Circuit Diagram

Six IGBTMOD™ KA-Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM50TU-34KA Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1700 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 50 Amperes Peak Collector Current (Tj ≤ 150°C) I CM 100* Amperes Emitter Current (Tc = 25°C) I E 50 Amperes Peak Emitter Current I EM 100* Amperes Maximum Collector Dissipation (Tc = 25°C) P c 600 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M5 Mounting – 31 in-lb W eight – 680 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 3500 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 1 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 5mA, VCE = 10V 4.0 5.5 7.0 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 50A, VGE = 15V, Tj = 25°C– 3.2 4.0 Volts IC = 50A, VGE = 15V, Tj = 125°C– 3.8 – Volts Total Gate Charge Q G VCC = 1000V , IC = 50A, VGE = 15V – 225 – nC Emitter-Collector Voltage* V EC IE = 50A, VGE = 0V, Tj = 25°C– – 4.6 Volts IE = 50A, VGE = 0V, Tj = 125°C– 2.2 – Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 7.0 nf Output Capacitance C oes VCE = 10V, VGE = 0V – – 1.2 nf Reverse Transfer Capacitance C res –– 0.38 nf Resistive Turn-on Delay Time t d(on) VCC = 1000V, IC = 50A, – – 100 ns Load Rise Time t r VGE1 = VGE2 = 15V, – – 100 ns Switch Turn-off Delay Time t d(off) R G = 6.3/H9024, Resistive – – 400 ns Times Fall Time t f Inductive Load – – 800 ns Diode Reverse Recovery Time t rr Switching Operation – – 200 ns Diode Reverse Recovery Charge Q rr IE = 50A – 3.9 – µC

Six IGBTMOD™ KA -Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 101 100 10-1 10-2 VGE = 0V 101 C ies C oes C res 101 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 05 1 0 15 20 Tj = 25°C IC = 20A IC = 100A IC = 50A COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 02 0 4 0 6 0 8 0 100 VGE = 15V Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 05 1 0 15 20 VCE = 10V Tj = 25°C Tj = 125°C 100 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02468 1 0 VGE = 20V 11 14 12 Tj = 25oC 100 1234 5 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)QP er IGBT 1/6 Module – – 0.21 °C/W Thermal Resistance, Junction to Case R th(j-c)DP er FWDi 1/6 Module – – 0.47 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.09 – °C/W Thermal Resistance R th(j-c')QT c Measured Point – – 0.17* °C/W (Under Chips - IGBT Part) * If you use this value, Rth(f-a) should be measured just under the chips.

Six IGBTMOD™ KA-Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.21°C/W Zth = Rth • (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Single Pulse T C = 25°C Per Unit Base = Rth(j-c) = 0.47°C/W Zth = Rth • (NORMALIZED VALUE) GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 100 200 300 VCC = 1000V VCC = 800V IC = 50A EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 100 101 102 102 101 trr Irr VCC = 1000V VGE = ±15V R G = 6.3 Ω Tj = 125°C INDUCTIVE LOAD 102 101 100 REVERSE RECOVERY CURRENT, I rr, (AMPERES) COLLECTOR CURRENT, I C , (AMPERES) 104 100 101 102 102 101 100 td(off) td(on) tr VCC = 1000V VGE = ±15V R G = 6.3 Ω Tj = 125°C INDUCTIVE LOAD tf SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103