CM50TU-24F

CM50TU-24F POWEREX | Alldatasheet

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Technical content

Six IGBTMOD™

50 Amperes /1200 Volts

Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.02 102.0 B 3.58 91.0 F 0.16 4.0 G 1.02 26.0 H 0.31 8.1 J 0.79 20.0 K 0.39 10.0 L 0.43 11.0 Dimensions Inches Millimeters M 0.47 11.85 N 0.75 19.1 P 0.74 18.7 Q 1.55 39.3 R 0.05 1.25 SM 4 M 4 T 0.22 Dia. 5.5 Dia. U 0.02 0.5 V 0.12 3.05 W 0.02 0.5 X 0.110 2.79 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low V CE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM50TU-24F is a 1200V (V CES ), 50 Ampere Six- IGBT IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 50 24 V J D J LL NN A L C H G F K GVP EUN N E B U GUN L GUP EUP N CM S - NUTS (5 TYP) K J Q GWN V W GVN EVN EWN R EWP M P N L EVP L GWP P T (4 TYP.) W - THICK x X - WIDE TAB (12 PLACES) RTC RTC RTC RTC RTC RTC A GUP EUP GUN EUN N P U V EVN GVN EVP GVP W EWN GWN EWP GWP TC MEASURING POINT TC MEASURING POINT

Trench Gate Design Six IGBTMOD™

50 Amperes/1200 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM50TU-24F Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1200 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 50 Amperes Peak Collector Current (Tj ≤ 150°C) I CM 100* Amperes Emitter Current I E 50 Amperes Peak Emitter Current I EM 100* Amperes Maximum Collector Dissipation (Tj < 150°C) P c 320 Watts Mounting Torque, M4 Main Terminal – 15 in-lb Mounting Torque, M5 Mounting – 31 in-lb Weight – 570 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V –– 1m A Gate Leakage Voltage I GES VGE = VGES , VCE = 0V –– 20 µA Gate-Emitter Threshold Voltage V GE(th) IC = 5.0mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 50A, VGE = 15V, Tj = 25°C – 1.8 2.4 Volts IC = 50A, VGE = 15V, Tj = 125°C – 1.9 – Volts Total Gate Charge Q G VCC = 600V , IC = 50A, VGE = 15V – 550 – nC Emitter-Collector Voltage** V EC IE = 50A, VGE = 0V –– 3.2 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Trench Gate Design Six IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 20 nf Output Capacitance C oes VCE = 10V, VGE = 0V –– 0.85 nf Reverse Transfer Capacitance C res –– 0.5 nf Inductive Turn-on Delay Time t d(on) VCC = 600V, IC = 50A, –– 100 ns Load Rise Time t r VGE1 = VGE2 = 15V, –– 50 ns Switch Turn-off Delay Time t d(off) R G = 6.3/H9024, –– 300 ns Times Fall Time t f Inductive Load –– 300 ns Diode Reverse Recovery Time t rr Switching Operation –– 150 ns Diode Reverse Recovery Charge Q rr IE = 50A, – 2.1 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT 1/6 Module, T c Reference – 0.39 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)D Per FWDi 1/6 Module, T c Reference –– 0.70 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/6 Module, – 0.26 °C/W Tc Reference Point Under Chip Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied– 0.018 – °C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Trench Gate Design Six IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 100 01234 COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3.0 02 04 0 6 0 8 0 2.0 2.5 1.5 1.0 0.5 100 VGE = 15V Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 Tj = 25°C IC = 20A IC = 100A IC = 50A 10-1 100 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 101 102 EMITTER CURRENT, I E, (AMPERES) COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE(TYPICAL) 10-1 100 102 102 101 100 10-1 101 VGE = 0V C ies C oes C res GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 200 400 600 800 IC = 50A VCC = 600V VCC = 400V COLLECTOR CURRENT, I C , (AMPERES) 103 100 101 102 102 101 100 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V R G = 6.3 Ω Tj = 125°C Inductive Load td(off) td(on) tr tf EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 100 101 102 101 100 102 101 100 REVERSE RECOVERY CURRENT, I rr, (AMPERES) trr Irr VCC = 600V VGE = ±15V R G = 6.3 Ω Tj = 25°C Inductive Load 8.5 9.511 VGE = 20V Tj = 25oC Tj = 25°C TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Per Unit Base R th(j-c) = 0.39°C/W (IGBT) R th(j-c) = 0.7°C/W (FWDi) Single Pulse T C = 25°C