CM50TL-24NF

CM50TL-24NF POWEREX | Alldatasheet

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Technical content

Six IGBTMOD™ NF-Series Module

50 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 110/10 Rev. 1 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM50TL-24NF is a 1200V (VCES), 50 Ampere Six- IGBTMOD™ Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 50 24 Dimensions Inches Millimeters A 4.72 120.0 B 2.17 55.0 C 1 .39 35.0 E 0.43 11 .0 F 0.28 7 .0 G 0.54 13.62 H 1 .61 40.78 J 0.67 17 .0 K 0.47 12.0 L M5 M5 M 0.22 Dia. Dia. 5.5 Dimensions Inches Millimeters N 1 .23 32.0 P 0.47 11 .75 Q 0.53 13.5 R 0.91 23.0 S 0.87 22.0 T 0.76 19.75 U 0.42 10.75 W 0.91 23.2 X 0.63 16.0 Y 0.12 3.0 Outline Drawing and Circuit Diagram AE D H JG J F C V L M N WX B K K K Q Y P K K K K S R T U R R 8 1 1 1 1 P NC NC NC B UP-1 UP-2 CN-5 CN-6 U VP-1 VP-2 CN-3 CN-4 V WP-1 WP-2 CN-1 CN-2 W CN-7 CN-8 N AA CN UP VP WP N P B U V W AB AA – B8P-VH-FB-B AB – B2P-VH-FB-B

Six IGBTMOD™ NF-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 10/10 Rev. 1 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol CM50TL-24NF Units Power Device Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (TC = 94°C)* IC 50 Amperes Peak Collector Current (Tj ≤ 150°C) ICM 100 Amperes Emitter Current* IE 50 Amperes Peak Emitter Current* IEM 100 Amperes Maximum Collector Dissipation (TC = 25°C, Tj < 150°C) PC 390 Watts Mounting Torque, M5 Mounting Screws — 31 in-lb Mounting Torque, M5 Main Terminal Screws — 31 in-lb Module Weight (Typical) — 350 Grams Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500 Volts Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate-Emitter Threshold Voltage VGE(th) I C = 5.0mA, VCE = 10V 6 7 8 Volts Gate Leakage Current IGES V GE = VGES, VCE = 0V — — 0.5 µA Collector-Emitter Saturation Voltage V CE(sat) I C = 50A, VGE = 15V, Tj = 25°C — 2.1 3.0 Volts IC = 50A, VGE = 15V, Tj = 125°C — 2.4 — Volts Input Capacitance Cies — — 8.5 nf Output Capacitance Coes V CE = 10V, VGE = 0V — — 0.75 nf Reverse Transfer Capacitance Cres — — 0.17 nf Total Gate Charge QG V CC = 600V, IC = 50A, VGE = 15V — 250 — nC Inductive Turn-on Delay Time t d(on) — — 100 ns Load Turn-on Rise Time t r V CC = 600V, IC = 50A, — — 50 ns Switch Turn-off Delay Time t d(off) V GE1 = VGE2 = 15V, — — 300 ns Time Turn-off Fall Time t f R G = 6.3Ω, IE = 50A, — — 350 ns Reverse Recovery Time* trr Inductive Load Switching Operation — — 100 ns Reverse Recovery Charge* Qrr — 2.0 — µC Emitter-Collector Voltage*** VEC I E = 50A, VGE = 0V — — 3.8 Volts *TC, Tf measured point is just under the chips. Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(max) rating. *Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Six IGBTMOD™ NF-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 310/10 Rev. 1 Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case* R th(j-c)Q Per IGBT 1/6 Module — — 0.32 °C/W Thermal Resistance, Junction to Case* R th(j-c)D Per FWDi 1/6 Module — — 0.43 °C/W Contact Thermal Resistance Rth(c-f) Per 1/6 Module, Thermal Grease Applied — — 0.085 °C/W External Gate Resistance RG 6.3 — 96 Ω *TC, Tf measured point is just under the chips. COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 102 101 100 10-2 10-1 1010 1 3 42 5 100 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 8 10 1412 16 18 20 Tj = 25°C Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres IC = 100A IC = 50A IC = 20A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 2 4 6 8 10 VGE = 20V Tj = 25°C 100 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1005025 75 VGE = 15V Tj = 25°C Tj = 125°C 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 100 101 102 100 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive Load tf 102

Six IGBTMOD™ NF-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 10/10 Rev. 1 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.32°C/W (IGBT) R th(j-c) = 0.43°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 100 101 101 100 VCC = 600V VGE = ±15V IC = 50A Tj = 125°C Inductive Load C Snubber at Bus 102 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) ESW(on) ESW(off) GATE RESISTANCE, RG, (Ω) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 100 101 101 100 VCC = 600V VGE = ±15V IE = 50A Tj = 125°C Inductive Load C Snubber at Bus 102 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 101 100 101 100 10-1 VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive Load C Snubber at Bus 102 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) Err Err GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 80 160 240 400320 VCC = 600V VCC = 400V IC = 50A EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 100 101 102 101 103 102 101 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 102 VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 25°C Inductive Load Irr trr COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 101 100 101 100 10-1 VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive Load C Snubber at Bus 102 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) ESW(on) ESW(off)