CM50TF-24H

CM50TF-24H POWEREX | Alldatasheet

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Six-IGBT IGBTMOD™ H-Series Module

50 Amperes/1200 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dimensions Inches Millimeters D 2.913 ±0.01 74.0 ±0.25 E 1.69 43.0 G 1.18 30.0 H 1.16 29.5 J 1.06 27.0 K 0.96 24.5 L 0.87 22.0 M 0.79 20.0 N 0.67 17.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem- bly and thermal management. Features: h Low Drive Power h Low V CE(sat) h Discrete Super-Fast Recovery (135ns) Free-Wheel Diode h High Frequency Operation (20-25kHz) h Isolated Baseplate for Easy Heat Sinking Applications: h AC Motor Control h Motion/Servo Control h UPS h Welding Power Supplies h Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM50TF-24H is a 1200V (V CES ), 50 Ampere Six-IGBT IGBTMOD™ Power Module. Type Current Rating V CES Amperes Volts (x 50) CM 50 24 Outline Drawing and Circuit Diagram AB F H V .110 TAB C L E A G N D U W AA L B P G K JT R M M AA S X Q X Q XN Z - M4 THD (7 TYP.) Y DIA. (4 TYP.) B uPE uPB vPE vPB w PE w P B uNE uNB vNE vNB w NE w N P P N N UVW P BuP EuP BuN EuN u BvP EvP v BvN EvN BwP EwP w BwN EwN P N N Dimensions Inches Millimeters P 0.65 16.5 Q 0.55 14.0 R 0.47 12.0 S 0.43 11.0 T 0.39 10.0 U 0.33 8.5 V 0.32 8.1 W 0.24 Rad. Rad. 6.0 X 0.24 6.0 Y 0.22 Dia. Dia. 5.5 Z M4 Metric M4 AA 0.08 2.0 AB 0.28 7.0

Six-IGBT IGBTMOD™ H-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM50TF-24H Units Junction Temperature T j –40 to 150 °C Storage Temperature T stg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1200 Volts Gate-Emitter Voltage V GES ±20 Volts Collector Current IC 50 Amperes Peak Collector Current I CM 100* Amperes Diode Forward Current I F 50 Amperes Diode Forward Surge Current I FM 100* Amperes Power Dissipation Pd 400 Watts Max. Mounting Torque M4 Mounting Screws – 13 in-lb Max. Mounting Torque M5 Mounting Screws – 17 in-lb Module Weight (T ypical) – 540 Grams V Isolation VRMS 2500 Volts * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 1.0 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V – – 0.5 m A Gate-Emitter Threshold Voltage V GE(th) IC = 5mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 50A, VGE = 15V – 2.5 3.4 Volts IC = 50A, VGE = 15V, Tj = 150°C – 2.25 – Volts Total Gate Charge Q G VCC = 600V, IC = 50A, VGS = 15V – 250 – nC Diode Forward Voltage V FM IE = 50A, VGS = 0V – – 3.4 Volts Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 1 0 n F Output Capacitance C oes VGE = 0V, VCE = 10V , f = 1MHz – – 3.5 nF Reverse Transfer Capacitance C res – – 2 nF Resistive Turn-on Delay Time t d(on) – – 80 ns Load Rise Time t r VCC = 600V, IC = 50A, – – 200 ns Switching Turn-off Delay Time t d(off) VGE1 = VGE2 = 15V, RG = 6.3Ω – – 150 ns Times Fall Time t f – – 350 ns Diode Reverse Recovery Time t rr IE = 50A, diE/dt = –100A/µs – – 250 ns Diode Reverse Recovery Charge Q rr IE = 50A, diE/dt = –100A/µs – 0.37 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c) Per IGBT – – 0.31 °C/W Thermal Resistance, Junction to Case R th(j-c) Per FWDi – – 0.70 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – – 0.033 °C/W

Six-IGBT IGBTMOD™ H-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02468 1 0 VGE = 20V 15 12 Tj = 25oC 100 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 VCE = 10V Tj = 25°C Tj = 125°C 100 COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 02 04 0 6 0 8 0 100 VGE = 15V Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 Tj = 25°C IC = 20A IC = 100A IC = 50A 100 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 101 102 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 102 101 100 10-1 VGE = 0V f = 1MHz 101 C ies C oes C res COLLECTOR CURRENT, I C , (AMPERES) SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 100 101 102 102 101 td(off) td(on) tr VCC = 600V VGE = ±15V R G = 6.3Ω Tj = 125°C tf EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 100 101 102 102 101 trr Irr di/dt = -100A/µsec Tj = 25°C 101 100 10-1 REVERSE RECOVERY CURRENT, I rr, (AMPERES) GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 100 200 300 400 VCC = 600V VCC = 400V IC = 50A

Six-IGBT IGBTMOD™ H-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.31°C/W Zth = R th

• (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.7°C/W Zth = R th
• (NORMALIZED VALUE) 10-1 10-2 10-3