CM50MXA-24S

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(3Ø Converter + 3Ø Inverter + Brake)

50 Amperes/1200 Volts

103/13 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Description: CIBs are low profile and thermally efficient. Each module consists of a three-phase diode converter sec- tion, a three-phase inverter section and a brake circuit. A thermistor is included in the package for sens- ing the baseplate temperature. 6th Generation CSTBT chips yield low loss. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM50MXA-24S is a 1200V (VCES), 50 Ampere CIB Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 50 24 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.79 121 .7 B 2.44 62.0 C 0.51 13.0 D 4.49 114.05 F 3.89 99.0 G 3.72 94.5 H 0.16 4.06 J 0.51 13.09 K 0.15 3.81 L 0.45 11 .43 M 0.9 22.86 N 0.22 Dia. 5.5 Dia. P 2.13 54.2 Q 1 .53 39.0 S 2.26 57 .5 T 0.30 7 .75 U 0.102 Dia. 2.6 Dia. Dimensions Inches Millimeters V 0.088 Dia. 2.25 Dia. W 0.46 11 .66 X 0.16 4.2 Y 0.59 15.0 Z 0.27 7 .0 AA 0.81 20.5 AB 0.67 17 .0 AC 0.12 3.0 AD 0.14 3.5 AE 0.03 0.8 AF 0.15 3.75 AG 0.05 1 .15 AH 0.025 0.65 AJ 0.29 7 .4 AK 0.05 1 .2 AL 0.49 12.5 AM 0.12 3.0 AN 0.17 Dia. 4.3 Dia. P1(48-49) T (9-10) P(54-56) N(59-61) ConvDi S (5-6) R (1-2) GWN(31) E(32) GWP(23) GVN(33) GVP(18) FWDi GUN(40) E*(39) GUP(13) ClampDi U(14-15) B(52-53) V(19-20) W(24-25) GB(41) N1(44-45) TH1 (29) TH2 (28) NTC Caution: Each (two or three) pin terminal of P/N/P1/N1/U/V/W/B/R/S/T is connected in the module, however, all three pins should be used for external wiring. DETAIL "B" A AA J P D E F K KM K KK G K KLL LH AG K AH AK AJ Z C AB R B AL Y K K L N (4 PLACES) ACK KK KKKK T AD WX L K K K K LL LL AE AF V AM U AN K Q S DETAIL "B" DETAIL "A" DETAIL "A" 12 34 56 78 91 01 11 21 31 41 51 61 71 81 92 02 12 2 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 Tolerance Otherwise Specified (mm) The tolerance of size between terminals is assumed to ±0.4 Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2

(3Ø Converter + 3Ø Inverter + Brake) 2 03/13 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, TC = 125°C)*2,*4 I C 50 Amperes Collector Current (Pulse, Repetitive)*3 I CRM 100 Amperes Total Power Dissipation (TC = 25°C)*2,*4 Ptot 425 Watts Emitter Current*2 IE*1 50 Amperes Emitter Current (Pulse, Repetitive)*3 IERM*1 100 Amperes Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max) 175 °C Brake Part IGBT/ClampDi Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, TC = 125°C)*2,*4 I C 35 Amperes Collector Current (Pulse, Repetitive)*3 I CRM 70 Amperes Total Power Dissipation (TC = 25°C)*2,*4 Ptot 355 Watts Repetitive Peak Reverse Voltage (VGE = 0V) VRRM 1200 Volts Forward Current*2 IF*1 35 Amperes Forward Current (Pulse, Repetitive)*3 IFRM*1 70 Amperes Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max) 175 °C *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 0 0 20.0 22.420.4 30.8 31 .8 44.4 45.4 18.4 LABEL SIDE Each mark points to the center position of each chip. Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi DiBr: Clamp Di CR*P / CR*N (* = R/S/T): Conv Di Th: NTC Thermistor 28.6 21 .1 33.7 72.7 81 .4 91 .4 98.8 46.8 37 .7 66.7 74.1 83.4 90.8 99.2 106.6 27 .3 25.5 (Di/WN, Th) 34.6 41 .2 44.2 107 .2 Tr Br Di Br Di UN Di VN Di WNTr UN Tr VN Tr WN Tr WP CR RN CR SN CR TN CR RP CR SP CR TP Di WP Di VP Tr VP Di UP Tr UP Th

(3Ø Converter + 3Ø Inverter + Brake) 303/13 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Converter Part ConvDi Characteristics Symbol Rating Units Repetitive Peak Reverse Voltage (VGE = 0V) VRRM 1600 Volts Recommended AC Input Voltage (RMS) Ea 480 Volts DC Output Current (3-Phase Full Wave Rectifying, TC = 125°C)*4 IO 50 Amperes Surge Forward Current (Sine Half Wave 1 Cycle Peak Value, f = 60Hz, Non-repetative) IFSM 500 Amperes Current Square Time (Value for One Cycle of Surge Current) I2t 1040 A 2s Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max) 150 °C Module Characteristics Symbol Rating Units Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO 2500 Volts Maximum Case Temperature*4 T C(max) 125 °C Operating Junction Temperature, Continuous Operation (Under Switching) Tj(op) -40 to +150 °C Storage Temperature Tstg -40 to +125 °C *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 0 0 20.0 22.420.4 30.8 31 .8 44.4 45.4 18.4 LABEL SIDE Each mark points to the center position of each chip. Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi DiBr: Clamp Di CR*P / CR*N (* = R/S/T): Conv Di Th: NTC Thermistor 28.6 21 .1 33.7 72.7 81 .4 91 .4 98.8 46.8 37 .7 66.7 74.1 83.4 90.8 99.2 106.6 27 .3 25.5 (Di/WN, Th) 34.6 41 .2 44.2 107 .2 Tr Br Di Br Di UN Di VN Di WNTr UN Tr VN Tr WN Tr WP CR RN CR SN CR TN CR RP CR SP CR TP Di WP Di VP Tr VP Di UP Tr UP Th

(3Ø Converter + 3Ø Inverter + Brake) 4 03/13 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate-Emitter Leakage Current IGES V GE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) I C = 5mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) I C = 50A, VGE = 15V, Tj = 25°C*6 — 1 .80 2.25 Volts (Terminal) I C = 50A, VGE = 15V, Tj = 125°C*6 — 2.00 — Volts I C = 50A, VGE = 15V, Tj = 150°C*6 — 2.05 — Volts Collector-Emitter Saturation Voltage VCE(sat) I C = 50A, VGE = 15V, Tj = 25°C*6 — 1 .70 2.15 Volts (Chip) I C = 50A, VGE = 15V, Tj = 125°C*6 — 1 .90 — Volts I C = 50A, VGE = 15V, Tj = 150°C*6 — 1 .95 — Volts Input Capacitance Cies — — 5.0 nF Output Capacitance Coes V CE = 10V, VGE = 0V — — 1 .0 nF Reverse Transfer Capacitance Cres — — 0.08 nF Gate Charge QG V CC = 600V, IC = 50A, VGE = 15V — 117 — nC Turn-on Delay Time td(on) — — 300 ns Rise Time tr V CC = 600V, IC = 50A, VGE = ±15V, — — 200 ns Turn-off Delay Time td(off) R G = 13Ω, Inductive Load — — 600 ns Fall Time tf — — 300 ns Emitter-Collector Voltage VEC*1 I E = 50A, VGE = 0V, Tj = 25°C*6 — 1 .80 2.25 Volts (Terminal) I E = 50A, VGE = 0V, Tj = 125°C*6 — 1 .80 — Volts I E = 50A, VGE = 0V, Tj = 150°C*6 — 1 .80 — Volts Emitter-Collector Voltage VEC*1 I E = 50A, VGE = 0V, Tj = 25°C*6 — 1 .70 2.15 Volts (Chip) I E = 50A, VGE = 0V, Tj = 125°C*6 — 1 .70 — Volts I E = 50A, VGE = 0V, Tj = 150°C*6 — 1 .70 — Volts Reverse Recovery Time trr*1 V CC = 600V, IE = 50A, VGE = ±15V — — 300 ns Reverse Recovery Charge Qrr*1 R G = 13Ω, Inductive Load — 2.7 — µC Turn-on Switching Energy per Pulse Eon V CC = 600V, IC = IE = 50A, — 5.5 — mJ Turn-off Switching Energy per Pulse Eoff V GE = ±15V, RG = 13Ω, — 5.3 — mJ Reverse Recovery Energy per Pulse Err*1 T j = 150°C, Inductive Load — 4.5 — mJ Internal Lead Resistance RCC' + EE' Main Terminals-Chip, — — 5.0 mΩ Per Switch,TC = 25°C*4 Internal Gate Resistance rg Per Switch — 0 — Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Pulse width and repetition rate should be such as to cause negligible temperature rise. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 0 0 20.0 22.420.4 30.8 31 .8 44.4 45.4 18.4 LABEL SIDE Each mark points to the center position of each chip. Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi DiBr: Clamp Di CR*P / CR*N (* = R/S/T): Conv Di Th: NTC Thermistor 28.6 21 .1 33.7 72.7 81 .4 91 .4 98.8 46.8 37 .7 66.7 74.1 83.4 90.8 99.2 106.6 27 .3 25.5 (Di/WN, Th) 34.6 41 .2 44.2 107 .2 Tr Br Di Br Di UN Di VN Di WNTr UN Tr VN Tr WN Tr WP CR RN CR SN CR TN CR RP CR SP CR TP Di WP Di VP Tr VP Di UP Tr UP Th

(3Ø Converter + 3Ø Inverter + Brake) 503/13 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Electrical Characteristics, Tj = 25°C unless otherwise specified Brake Part IGBT/ClampDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate-Emitter Leakage Current IGES V GE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) I C = 3.5mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) I C = 35A, VGE = 15V, Tj = 25°C*6 — 1 .80 2.25 Volts (Terminal) I C = 35A, VGE = 15V, Tj = 125°C*6 — 2.00 — Volts I C = 35A, VGE = 15V, Tj = 150°C*6 — 2.05 — Volts Collector-Emitter Saturation Voltage VCE(sat) I C = 35A, VGE = 15V, Tj = 25°C*6 — 1 .70 2.15 Volts (Chip) I C = 35A, VGE = 15V, Tj = 125°C*6 — 1 .90 — Volts I C = 35A, VGE = 15V, Tj = 150°C*6 — 1 .95 — Volts Input Capacitance Cies — — 3.5 nF Output Capacitance Coes V CE = 10V, VGE = 0V — — 0.7 nF Reverse Transfer Capacitance Cres — — 0.06 nF Gate Charge QG V CC = 600V, IC = 35A, VGE = 15V — 82 — nC Turn-on Delay Time td(on) — — 300 ns Rise Time tr V CC = 600V, IC = 35A, VGE = ±15V, — — 200 ns Turn-off Delay Time td(off) R G = 18Ω, Inductive Load — — 600 ns Fall Time tf — — 300 ns Forward Voltage VF I E = 35A, VGE = 0V, Tj = 25°C*6 — 1 .80 2.25 Volts (Terminal) I E = 35A, VGE = 0V, Tj = 125°C*6 — 1 .80 — Volts I E = 35A, VGE = 0V, Tj = 150°C*6 — 1 .80 — Volts Forward Voltage VF I E = 35A, VGE = 0V, Tj = 25°C*6 — 1 .70 2.15 Volts (Chip) I E = 35A, VGE = 0V, Tj = 125°C*6 — 1 .70 — Volts I E = 35A, VGE = 0V, Tj = 150°C*6 — 1 .70 — Volts Reverse Recovery Time trr V CC = 600V, IE = 35A, VGE = ±15V — — 300 ns Reverse Recovery Charge Qrr R G = 18Ω, Inductive Load — 1 .9 — µC Turn-on Switching Energy per Pulse Eon V CC = 600V, IC = IE = 35A, — 4.2 — mJ Turn-off Switching Energy per Pulse Eoff V GE = ±15V, RG = 18Ω, — 3.7 — mJ Reverse Recovery Energy per Pulse Err T j = 150°C, Inductive Load — 3.5 — mJ Internal Gate Resistance rg — 0 — Ω *6 Pulse width and repetition rate should be such as to cause negligible temperature rise.

(3Ø Converter + 3Ø Inverter + Brake) 6 03/13 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) Converter Part ConvDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Repetitive Peak Reverse Current IRRM V R = VRRM, Tj = 150°C — — 6.0 mA Forward Voltage VF I F = 50A*6 — 1 .2 1 .6 Volts (Terminal) NTC Thermistor Part Characteristics Symbol Test Conditions Min. Typ. Max. Units Zero Power Resistance R25 T C = 25°C*4 4.85 5.00 5.15 kΩ Deviation of Resistance ∆R/R T C = 100°C*4, R100 = 493Ω -7 .3 — +7 .8 % B Constant B(25/50) Approximate by Equation*7 — 3375 — K Power Dissipation P25 T C = 25°C*4 — — 10 mW Thermal Resistance Characteristics Thermal Resistance, Junction to Case*4 R th(j-c)Q Per Inverter IGBT — — 0.35 K/W Thermal Resistance, Junction to Case*4 R th(j-c)D Per Inverter FWDi — — 0.63 K/W Thermal Resistance, Junction to Case*4 R th(j-c)Q Per Brake IGBT — — 0.42 K/W Thermal Resistance, Junction to Case*4 R th(j-c)D Per Brake ClampDi — — 0.69 K/W Thermal Resistance, Junction to Case*4 R th(j-c)D Per Converter ConvDi — — 0.33 K/W Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied, — 15 — K/kW Case to Heatsink*4 Per 1 Module*8 *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Pulse width and repetition rate should be such as to cause negligible temperature rise. *7 B(25/50) = In( R25)/( ) R50 T25 T50 R 25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R 50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] *8 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 0 0 19.6 22.020.4 30.3 31 .3 43.9 44.9 18.4 LABEL SIDE Each mark points to the center position of each chip. Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi DiBr: Clamp Di CR*P / CR*N (* = R/S/T): Conv Di Th: NTC Thermistor 28.1 21 .1 33.7 72.3 81 .8 91 .8 99.2 46.3 37 .2 66.3 74.2 83.0 90.9 99.6 106.2 24.9 26.2 25.8 34.2 40.8 43.8 107 .2 Tr Br Di Br Di UN Di VN Di VP Tr VP Di UP Tr UP Di WNTr UN Tr VN Tr WN Tr WP Th CR RN CR SN CR TN CR RP CR SP CR TP Di WP

(3Ø Converter + 3Ø Inverter + Brake) 703/13 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com MechanicalCharacteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Mounting Torque M s Mounting to Heatsink, M5 Screw 22 27 31 in-lb Creepage Distance ds Terminal to Terminal 6.47 — — mm Terminal to Baseplate 14.27 — — mm Clearance d a Terminal to Terminal 6.47 — — mm Terminal to Baseplate 12.33 — — mm Weight m 300 g Flatness of Baseplate ec On Centerline X, Y*5 ±0 — ± 100 µm Recommended Operating Conditons, Ta = 25°C DC Supply Voltage VCC Applied Across P-N/P1-N1 Terminals — 600 850 Volts Gate-Emitter Drive Voltage VGE(on) Applied Across GB-Es1/ 13.5 15.0 16.5 Volts G*P-*/G*N-Es (* = U, V, W) Terminals External Gate Resistance RG Per Switch Inverter IGBT 13 — 130 Ω Per Switch Brake IGBT 18 — 180 Ω *5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. – : CONCAVE + : CONVEX – : CONCAVE X Y + : CONVEX MOUNTING SIDE MOUNTING SIDE MOUNTING SIDE

(3Ø Converter + 3Ø Inverter + Brake) 8 03/13 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 100 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (INVERTER PART - TYPICAL) 101 102 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 6 8 10 1412 16 18 20 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) OUTPUT CHARACTERISTICS (INVERTER PART - TYPICAL) 0 2 4 6 8 10 100 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) 3.5 3.0 2.0 2.5 1.0 1.5 0.5 60 80 10020 40 EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) Tj = 25°C IC = 100A IC = 50A IC = 20A VGE = 20V 1213.5 Tj = 25°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C

(3Ø Converter + 3Ø Inverter + Brake) 903/13 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CAPACITANCE, Cies, Coes, Cres, (nF) SWITCHING TIME, (ns) SWITCHING TIME, (ns) SWITCHING TIME, (ns) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE VS. VCE (INVERTER PART - TYPICAL) 100 102 102 101 100 10-1 10-2 10110-1 COLLECTOR CURRENT, IC, (AMPERES) 103 100 101 102 100 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) 102 COLLECTOR CURRENT, IC, (AMPERES) 103 100 101 102 100 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) 102 EXTERNAL GATE RESISTANCE, RG, (Ω) 103 101 102 102 101 SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) 103 VGE = 0V Cies Coes Cres td(off) td(on) tr VCC = 600V VGE = ±15V RG = 13/uni03A9 Tj = 150°C Inductive Load tf td(off) td(on) tr VCC = 600V VGE = ±15V RG = 13/uni03A9 Tj = 125°C Inductive Load tf td(off) td(on) tr VCC = 600V VGE = ±15V IC = 50A Tj = 125°C Inductive Load tf

(3Ø Converter + 3Ø Inverter + Brake) 10 03/13 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com GATE CHARGE, QG, (nC) GATE CHARGE VS. VGE(INVERTER PART) 50 150 200100 EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) 103 101 102 101 102 EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) 103 100 101 102 101 102 EXTERNAL GATE RESISTANCE, RG, (Ω) 103 101 102 102 101 SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) 103 SWITCHING TIME, (ns) GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr (A), trr (ns) REVERSE RECOVERY, Irr (A), trr (ns) IC = 50A VCC = 600V 100 VCC = 600V VGE = ±15V RG = 13/uni03A9 Tj = 125°C Inductive Load Irr trr VCC = 600V VGE = ±15V RG = 13/uni03A9 Tj = 150°C Inductive Load Irr trr td(off) td(on) tr VCC = 600V VGE = ±15V IC = 50A Tj = 150°C Inductive Load tf

(3Ø Converter + 3Ø Inverter + Brake) 1103/13 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com GATE RESISTANCE, RG, (Ω) 102 101 102 101 100 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 100 101 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 100 101 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) GATE RESISTANCE, RG, (Ω) 102 101 102 101 100 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) REVERSE RECOVERY ENERGY, Err, (mJ) 102 100 10-1 101 100 10-2 REVERSE RECOVERY ENERGY, Err, (mJ) 102 101101 100 10-1 101 100 10-110-1 10-2 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) VCC = 600V VGE = ±15V IC = 50A Tj = 150°C Inductive Load VCC = 600V VGE = ±15V RG = 13/uni03A9 Tj = 150°C Inductive Load Eon Eoff Err Eon Eoff Err VCC = 600V VGE = ±15V RG = 13/uni03A9 Tj = 125°C Inductive Load Eon Eoff Err VCC = 600V VGE = ±15V IC = 50A Tj = 125°C Inductive Load Eon Eoff Err

(3Ø Converter + 3Ø Inverter + Brake) 12 03/13 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (BRAKE PART - TYPICAL) 3.5 3.0 2.0 2.5 0.5 1.5 1.0 7050 6010 20 30 40 100 101 FORWARD CURRENT IF, (AMPERES) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (BRAKE PART - TYPICAL) 102 COLLECTOR CURRENT, IC, (AMPERES) 103 100 101 102 100 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) 102 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - MAXIMUM) 100 10-1 10-2 10-5 10-310-4 10-2 10-1 100 101 Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) FORWARD VOLTAGE, VF, (VOLTS) SWITCHING TIME, (ns) Tj = 25°C Tj = 125°C Tj = 150°C td(off) td(on) tr VCC = 600V VGE = ±15V RG = 18/uni03A9 Tj = 125°C Inductive Load tf Tj = 25°C Tj = 125°C Tj = 150°C 10-3 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.35°K/W (IGBT) R th(j-c) = 0.63°K/W (FWDi)

(3Ø Converter + 3Ø Inverter + Brake) 1303/13 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com EXTERNAL GATE RESISTANCE, RG, (Ω) 103 101 102 102 101 SWITCHING TIME VS. GATE RESISTANCE (BRAKE - TYPICAL) 103 EXTERNAL GATE RESISTANCE, RG, (Ω) 103 101 102 102 101 SWITCHING TIME VS. GATE RESISTANCE (BRAKE - TYPICAL) 103 COLLECTOR CURRENT, IC, (AMPERES) FORWARD CURRENT, IF, (AMPERES) 102 101 100 101 100 10-1 101 100 10-1 10-2 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) 103 100 101 102 100 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) 102 SWITCHING TIME, (ns) SWITCHING TIME, (ns) SWITCHING TIME, (ns) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ)td(off) td(on) tr VCC = 600V VGE = ±15V IC = 50A Tj = 150°C Inductive Load tf td(off) td(on) tr VCC = 600V VGE = ±15V IC = 35A Tj = 125°C Inductive Load tf VCC = 600V VGE = ±15V RG = 18/uni03A9 Tj = 125°C Inductive Load Eon Eoff Err td(off) td(on) tr VCC = 600V VGE = ±15V RG = 18/uni03A9 Tj = 150°C Inductive Load tf

(3Ø Converter + 3Ø Inverter + Brake) 14 03/13 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) EXTERNAL GATE RESISTANCE, RG, (Ω) 102 101 102 101 100 103 EXTERNAL GATE RESISTANCE, RG, (Ω) 102 101 102 101 100 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (BRAKE PART - TYPICAL) REVERSE RECOVERY ENERGY, Err, (mJ) FORWARD CURRENT, IF, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (BRAKE PART - TYPICAL) 103 100 101 102 101 102 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) REVERSE RECOVERY, Irr (A), trr (ns) VCC = 600V VGE = ±15V IC/IF = 35A Tj = 150°C Inductive Load Eon Eoff Err VCC = 600V VGE = ±15V IC/IF = 35A Tj = 125°C Inductive Load Eon Eoff Err VCC = 600V VGE = ±15V RG = 18/uni03A9 Tj = 125°C Inductive Load Irr trr COLLECTOR CURRENT, IC, (AMPERES) FORWARD CURRENT, IF, (AMPERES) 102 101 100 101 100 10-1 101 100 10-1 10-2 102 SWITCHING ENERGY, Eon, Eoff, (mJ) VCC = 600V VGE = ±15V RG = 18/uni03A9 Tj = 150°C Inductive Load Eon Eoff Err

(3Ø Converter + 3Ø Inverter + Brake) 1503/13 Rev. 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') REVERSE RECOVERY, Irr (A), trr (ns) TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (BRAKE PART - MAXIMUM) 100 10-1 10-2 10-3 10-5 10-310-4 10-2 10-1 100 101 FORWARD CURRENT, IF, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (BRAKE PART - TYPICAL) 103 100 101 102 101 102 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.42°K/W (IGBT) R th(j-c) = 0.69°K/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (CONVERTER PART - MAXIMUM) 100 10-1 10-2 10-3 10-5 10-310-4 10-2 10-1 100 101 Zth = Rth • (NORMALIZED VALUE) Single Pulse T C = 25°C Per Unit Base = R th(j-c) = 0.33°K/W VCC = 600V VGE = ±15V RG = 18/uni03A9 Tj = 150°C Inductive Load Irr trr 100 101 FORWARD VOLTAGE, VF, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CONVERTER PART - TYPICAL) 102 FORWARD CURRENT IF, (AMPERES) Tj = 25°C Tj = 125°C