CM50DU-24H

CM50DU-24H POWEREX | Alldatasheet

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Dual IGBTMOD™ U-Series Module

50 Amperes /1200 Volts

Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 3.7 94.0 B 1.89 48.0 E 0.43 11.0 F 0.16 4.0 G 0.71 18.0 H 0.02 0.5 Dimensions Inches Millimeters J 0.53 13.5 K 0.91 23.0 L 1.13 28.7 M 0.67 17.0 N 0.28 7.0 P M5 M5 Q 0.26 Dia. 6.5 Dia. R 0.02 4.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each tran- sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter- connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: h Low Drive Power h Low V CE(sat) h Discrete Super-Fast Recovery Free-Wheel Diode h Isolated Baseplate for Easy Heat Sinking Applications: h AC Motor Control h Motion/Servo Control h UPS h Welding Power Supplies h Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM50DU-24H is a 1200V (V CES ), 50 Ampere Dual IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 50 24 Q - (2 PLACES) CM P - NUTS (3 PLACES) C2E1 C2E1 E2 C1 E2 G2 G1 E1 H A B C D RK KM N E F G F J L

Dual IGBTMOD™ U-Series Module

50 Amperes/1200 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM50DU-24H Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1200 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 50 Amperes Peak Collector Current I CM 100* Amperes Emitter Current (Tc = 25°C) I E 50 Amperes Peak Emitter Current I EM 100* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P c 400 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M6 Mounting – 40 in-lb Weight – 310 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 1 mA Gate Leakage Voltage I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 5mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 50A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts IC = 50A, VGE = 15V, Tj = 125°C – 2.85 – Volts Total Gate Charge Q G VCC = 600V, IC = 50A, VGE = 15V – 187 – nC Emitter-Collector Voltage V EC IE = 50A, VGE = 0V – – 3.2 Volts Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies – – 7.5 nf Output Capacitance C oes VCE = 10V, VGE = 0V – – 2.6 nf Reverse Transfer Capacitance C res – – 1.5 nf Resistive Turn-on Delay Time t d(on) VCC = 600V, IC = 50A, – – 80 ns Load Rise Time t r VGE1 = VGE2 = 15V, – – 200 ns Switch Turn-off Delay Time t d(off) R G = 6.3V, Resistive – – 150 ns Times Fall Time t f Load Switching Operation – – 350 ns Diode Reverse Recovery Time t rr IE = 50A, diE/dt = -100A/µs – – 300 ns Diode Reverse Recovery Charge Q rr IE = 50A, diE/dt = -100A/µs – 0.28 – µC Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT 1/2 Module – – 0.31 °C/W Thermal Resistance, Junction to Case R th(j-c)D Per FWDi 1/2 Module – – 0.7 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.035 – °C/W

Dual IGBTMOD™ U-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02468 1 0 VGE = 20V Tj = 25oC 100 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 100 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 02 04 0 6 0 8 0 100 VGE = 15V Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 Tj = 25°C IC = 20A IC = 100A IC = 50A 100 101 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE(TYPICAL) 10-1 100 102 102 101 100 10-2 10-1 VGE = 0V f = 1MHz 101 C oes C res C ies COLLECTOR CURRENT, I C , (AMPERES) 103 100 101 102 102 101 100 td(off) td(on) tr VCC = 600V VGE = –15V R G = 6.3 Ω Tj = 125°C tf SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 100 101 102 102 101 trr Irr di/dt = -100A/µsec Tj = 25°C 102 101 100 REVERSE RECOVERY CURRENT, I rr, (AMPERES) GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 50 150 100 250200 VCC = 600V VCC = 400V IC = 50A

Dual IGBTMOD™ U-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS ( IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.31°C/W Zth = R th

• (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.7°C/W Zth = R th
• (NORMALIZED VALUE) 10-1 10-2 10-3