CM500HA-34A

CM500HA-34A POWEREX | Alldatasheet

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Technical content

Single IGBTMOD™ A-Series Module

500 Amperes/1700 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 102/10 Rev. 1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 108.0 C 0.63 16.0 D 0.30 7 .5 E 0.69 17 .5 F 1 .14 29.0 G 0.79 20.0 H 0.94 24.0 J 0.31 7 .9 K 0.24 6.0 L 2.44 62.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transis- tor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ DC Chopper £ Inverter £ UPS £ Forklift Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM500HA-34A is a 1700V (VCES),

500 Ampere Single

IGBTMOD™ Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 500 34 Dimensions Inches Millimeters N 0.39 10.0 P 0.39 10.0 Q 0.51 13.0 R 0.33 8.5 U M6 Metric M6 V M4 Metric M4 W 0.256 6.5 X 0.79 20.0 Y 0.35 9.0 C G E E E E G C A B C F K J E D M N P Q R S U - THD. (2 TYP.)V -THD. (2 TYP.) W - DIA. (4 TYP.) y x T L H G

Single IGBTMOD™ A-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 02/10 Rev. 1 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM500HA-34A Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1700 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (DC, TC = 110°C)*4 I C 500 Amperes Peak Collector Current (Pulse, Repetitive)*2 I CM 1000 Amperes Emitter Current (DC, TC = 25°C)*4 I E*1 500 Amperes Peak Emitter Current (Pulse, Repetitive)*2 I EM*1 1000 Amperes Maximum Collector Dissipation (TC = 25°C)*2,*4 PC 5000 Watts Mounting Torque, M6 Main Terminal — 26 in-lb Mounting Torque, M6 Mounting — 26 in-lb Mounting Torque, M4 G(E) Terminal — 13 in-lb Weight — 480 Grams Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) VISO 3500 Volts Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate Leakage Current IGES V GE = VGES, VCE = 0V — — 3.0 µA Gate-Emitter Threshold Voltage VGE(th) I C = 50mA, VCE = 10V 5.5 7 .0 8.5 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 500A, VGE = 15V, Tj = 25°C*3 — 2.3 3.0 Volts I C = 500A, VGE = 15V, Tj = 125°C*3 — 2.45 — Volts Total Gate Charge QG V CC = 1000V, IC = 500A, VGE = 15V — 3300 — nC Emitter-Collector Voltage*1 V EC I E = 500A, VGE = 0V*3 — — 3.2 Volts Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies — — 120 nf Output Capacitance Coes V CE = 10V, VGE = 0V — — 14 nf Reverse Transfer Capacitance Cres — — 2.6 nf Inductive Turn-on Delay Time t d(on) — — 900 ns Load Rise Time tr V CC = 1000V, IC = 500A, — — 500 ns Switch Turn-off Delay Time t d(off) V GE1 = VGE2 = 15V, RG = 3.0Ω, — — 1200 ns Time Fall Time tf Inductive Load — — 250 ns Diode Reverse Recovery Time*1 t rr Switching Operation, — — 650 ns Diode Reverse Recovery Charge*1 Q rr I E = 500A — 50 — µC *1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(max) rating. *3 Pulse width and repetition rate should be such as to cause negligible temperature rise. *4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM500HA-34A Single IGBTMOD™ A-Series Module 302/10 Rev. 1 Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT*4 — — 0.025 °C/W Thermal Resistance, Junction to Case R th(j-c)D Per FWDi*4 — — 0.042 °C/W Contact Thermal Resistance Rth(c-f) Case to Heatsink,Thermal Grease Applied* 4,*5 — 0.015 — °C/W External Gate Resistance RG 3.0 — 10 Ω *4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips. *5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 103 102 101 100 10-1 10101 324 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 25°C COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 160 120 VGE = 10V Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres IC = 1000A IC = 500A IC = 200A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0246 81 0 04 81 21 62 0 048 12 16 20 VGE = 20V Tj = 25oC 200 400 600 1000 800 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 1000800400 600 VCE = 15V Tj = 25°C Tj = 125°C 200 10-1 Tj = 25°C Tj = 125°C

Single IGBTMOD™ A-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 02/10 Rev. 1 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.025°C/W (IGBT) Rth(j-c) = 0.042°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 1000 50003000 40002000 VCC = 1000V EMITTER CURRENT, IC, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 102 101 REVERSE RECOVERY CURRENT, Irr, (AMPERES) VCC = 1000V VGE = 15V RG = 3.0Ω Tj = 25°C Inductive Load VCC = 800V IC = 500A 103 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE) 103 101 102 101 102 100 VCC = 1000V VGE = 15V RG = 3.0Ω Tj = 125°C Inductive Load VCC = 1000V VGE = 15V IC = 500A Tj = 125°C Inductive Load 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE) 103 100 102 101 101 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) Irr trr COLLECTOR CURRENT, IC, (AMPERES) 104 103 101 102 102 101 SWITCHING TIME, td(on), tr, td(off), tf, (ns) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) td(off) td(on) tr VCC = 1000V VGE = 15V RG = 3.0Ω Tj = 125°C Inductive Load tf 103 GATE RESISTANCE, RG, (Ω) 103 100 102 101 100 SWITCHING TIME, td(on), tr, td(off), tf, (ns) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) td(off) td(on) Eon Eoff Eon Eoff Err tr VCC = 1000V VGE = 15V IC = 500A Tj = 125°C Inductive Load tf 101 Err