CM450DY-24S

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBTMOD™ S-Series Module

450 Amperes/1200 Volts

109/11 Rev. 1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.33 110.0 B 3.15 80.0 F 0.98 25.0 G 0.24 6.0 H 0.59 15.0 J 0.81 20.5 K 0.55 14.0 L 0.26 Dia. Dia. 6.5 M M6 Metric M6 Dimensions Inches Millimeters N 1 .18 30.0 P 0.71 18.0 Q 0.28 7 .0 R 0.83 21 .2 S 0.33 8.5 T 0.0157 0.4 U 0.110 2.8 V 0.16 4.0 W 0.30 7 .5 X 0.21 5.3 Y 0.47 12.0 Z 0.85 21 .5 A W FF N J G G HEB L (4 PLACES) D M (3 PLACES) K K K P P P QQ V Z Y X V U C S R C2E1 E2 C1 C1E2C2E1 Tr2 Di2 Tr1 Di1 LABEL Tolerance Otherwise Specified Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1. 2 Description: Powerex Dual IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM450DY -24S is a 1200V (VCES), 450 Ampere Dual IGBTMOD™ Power Module. Current Rating VCES Type Amperes Volts (x 50) CM 450 24

Dual IGBTMOD™ S-Series Module

450 Amperes/1200 Voltstt

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 09/11 Rev. 1 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, TC = 125°C)*2,*8 I C 410 Amperes Collector Current (Pulse, Repetitive)*3 I CRM 900 Amperes Total Power Dissipation (TC = 25°C)*2,*4 P tot 3330 Watts Emitter Current (TC = 25°C)*2,*4,*8 IE*1 410 Amperes Emitter Current (Pulse, Repetitive)*3 IERM*1 900 Amperes Module Characteristics Symbol Rating Units Maximum Junction Temperature Tj(max) +175 °C Operating Junction Temperature Tj(op) -40 to +150 °C Storage Temperature Tstg -40 to +125 °C Case Temperature,*2 T C -40 to +125 °C Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO 2500 Volts *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *8 This model has 450A size IGBT and FWDi chips. This package limitation is based on package issue. 20.6 20.4 33.6 46.8 77.4 33.6 46.6 Di1 Di1 Di1 Tr2 Tr2 Tr2 Tr1 Tr1 Tr1Di2 Di2 Di2 66.2 21.5 21.6 35.0 48.2 48.445.6 33.3 LABEL SIDE Tr1 / Tr2: IGBT, Di1 / Di2: FWDi Each mark points to the center position of each chip.

Dual IGBTMOD™ S-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 309/11 Rev. 1 Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 mA Gate-Emitter Leakage Current IGES V GE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) I C = 45mA, VCE = 10V 5.4 6 6.6 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 450A, VGE = 15V, Tj = 25°C*5 — 1 .80 2.25 Volts (Terminal) I C = 450A, VGE = 15V, Tj = 125°C*5 — 2.05 — Volts IC = 450A, VGE = 15V, Tj = 150°C*5 — 2.10 — Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 450A, VGE = 15V, Tj = 25°C*5 — 1 .70 2.15 Volts (Chip) I C = 450A, VGE = 15V, Tj = 125°C*5 — 1 .90 — Volts IC = 450A, VGE = 15V, Tj = 150°C*5 — 1 .95 — Volts Input Capacitance Cies — — 45 nF Output Capacitance Coes V CE = 10V, VGE = 0V — — 9.0 nF Reverse Transfer Capacitance Cres — — 0.75 nF Gate Charge QG V CC = 600V, IC = 450A, VGE = 15V — 1050 — nC Turn-on Delay Time td(on) — — 800 ns Rise Time tr V CC = 600V, IC = 450A, VGE = ±15V, — — 200 ns Turn-off Delay Time td(off) R G = 0Ω, Inductive Load — — 600 ns Fall Time tf — — 300 ns Emitter-Collector Voltage VEC*1 I E = 450A, VGE = 0V, Tj = 25°C*5 — 1 .85 2.30 Volts (Terminal) I E = 450A, VGE = 0V, Tj = 125°C*5 — 1 .85 — Volts I E = 450A, VGE = 0V, Tj = 150°C*5 — 1 .85 — Volts Emitter-Collector Voltage VEC*1 I E = 450A, VGE = 0V, Tj = 25°C*5 — 1 .70 2.15 Volts (Chip) I E = 450A, VGE = 0V, Tj = 125°C*5 — 1 .70 — Volts I E = 450A, VGE = 0V, Tj = 150°C*5 — 1 .70 — Volts Reverse Recovery Time trr*1 V CC = 600V, IE = 450A, VGE = ±15V — — 300 ns Reverse Recovery Charge Qrr*1 R G = 0Ω, Inductive Load — 24 — µC Turn-on Switching Energy per Pulse Eon V CC = 600V, IC = IE = 450A, — 54.9 — mJ Turn-off Switching Energy per Pulse Eoff V GE = ±15V, RG = 0Ω, — 48.0 — mJ Reverse Recovery Energy per Pulse Err*1 T j = 150°C, Inductive Load — 32.4 — mJ Internal Lead Resistance RCC' + EE' Main Terminals-Chip, — — 0.7 mΩ Per Switch,TC = 25°C*2 Internal Gate Resistance rg Per Switch — 4.3 — Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 20.6 20.4 33.6 46.8 77.4 33.6 46.6 Di1 Di1 Di1 Tr2 Tr2 Tr2 Tr1 Tr1 Tr1Di2 Di2 Di2 66.2 21.5 21.6 35.0 48.2 48.445.6 33.3 LABEL SIDE Tr1 / Tr2: IGBT, Di1 / Di2: FWDi Each mark points to the center position of each chip.

Dual IGBTMOD™ S-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 09/11 Rev. 1 Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified Thermal Resistance, Junction to Case*2 R th(j-c)Q Per Inverter IGBT — — 0.045 K/W Thermal Resistance, Junction to Case*2 R th(j-c)D Per Inverter FWDi — — 0.068 K/W Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied — 0.018 — K/W Case to Heatsink*2 (Per 1 Module)*6 Mechanical Characteristics Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb M s Mounting to Heatsink, M6 Screw 31 35 40 in-lb Creepage Distance ds Terminal to Terminal — — — mm Terminal to Baseplate — — — mm Clearance da Terminal to Terminal — — — mm Terminal to Baseplate — — — mm Weight m — 580 — Grams Flatness of Baseplate ec On Centerline X, Y*7 -100 — ± 100 µm Recommended Operating Conditons, Ta = 25°C (DC) Supply Voltage VCC Applied Across C1-E2 — 600 850 Volts Gate (-Emitter Drive) Voltage VGE(on) Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts External Gate Resistance RG Per Switch 0 — 8 Ω *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. X BOTTOM – CONCAVE 3 mm + CONVEX – CONCAVE + CONVEX BOTTOM BOTTOM LABEL SIDE Y 20.6 20.4 33.6 46.8 77.4 33.6 46.6 Di1 Di1 Di1 Tr2 Tr2 Tr2 Tr1 Tr1 Tr1Di2 Di2 Di2 66.2 21.5 21.6 35.0 48.2 48.445.6 33.3 LABEL SIDE Tr1 / Tr2: IGBT, Di1 / Di2: FWDi Each mark points to the center position of each chip.

Dual IGBTMOD™ S-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 509/11 Rev. 1 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 102 101 100 10-2 10-1 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CHIP - TYPICAL) 102 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) 6 8 10 1412 16 18 20 Tj = 25°C VGE = 0V Cies Coes Cres IC = 900A IC = 450A IC = 180A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (CHIP - TYPICAL) 0 2 4 6 8 10 VGE = 20V 1213.5 Tj = 25°C 900 300 400 500 600 700 800 200 100 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) 3.5 2.5 3.0 2.0 1.5 0.5 1.0 900700100 200 300 400 500 600 800 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 125°C Inductive Load tf 103 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 150°C Inductive Load tf 103 GATE RESISTANCE, RG, (/uni03A9) 103 10-1 100 101 101 102 SWITCHING TIME, (ns) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V IC = 450A Tj = 125°C Inductive Load tf 102 GATE RESISTANCE, RG, (/uni03A9) 103 10-1 100 101 101 102 SWITCHING TIME, (ns) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V IC = 450A Tj = 150°C Inductive Load tf 102 Tj = 25°C Tj = 125°C Tj = 150°C

Dual IGBTMOD™ S-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 6 09/11 Rev. 1 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.045°K/W (IGBT) R th(j-c) = 0.068°K/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE RESISTANCE, RG, (/uni03A9) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 103 102 10-1 100 101 101 100 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 125°C VCC = 600V VGE = ±15V IC = 450A Tj = 125°C COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) SWITCHING ENERGY, Eon, Eoff, (mJ/PULSE) REVERSE RECIVERY ENERGY, Err, (mJ/PULSE) 102 101 101 102 100 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 500 1000 1500 VCC = 600V IC = 450A Tj = 25°C EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 125°C Inductive Load Irr trr REVERSE RECOVERY, Irr (A), trr (ns) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 150°C Inductive Load Irr trr REVERSE RECOVERY, Irr (A), trr (ns) Eon Eoff Err VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 150°C COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) SWITCHING ENERGY, Eon, Eoff, (mJ/PULSE) REVERSE RECIVERY ENERGY, Err, (mJ/PULSE) 102 101 101 102 100 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Eon Eoff Err GATE RESISTANCE, RG, (/uni03A9) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 103 102 10-1 100 101 101 100 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V IC = 450A Tj = 150°C Eon Eoff Err Eon Eoff Err