CM450DX-34SA

CM450DX-34SA POWEREX | Alldatasheet

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450 Amperes/1700 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 04/13 Rev. 0 Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM450DX-34SA is a 1700V (VCES), 450 Ampere Dual IGBT Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 450 34 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters AB 0.22 Dia. 5.5 Dia. AD 2.26 57 .5 AE 0.15 3.75 AF M6 M6 AG 0.28 7 .0 AH 0.14 3.5 AJ 0.03 0.8 AK 0.81 20.5 AL 0.70 17 .0 AM 0.12 3.0 AN 0.65 16.5 AP 0.49 12.5 AQ 0.18 4.5 AR 0.102 Dia. 2.6 Dia. AS 0.089 Dia. 2.25 Dia. AT 0.05 1 .2 AU 0.03 0.65 AV 0.05 1 .15 AW 0.54 13.7 AX 0.52 13.0 AY 0.285 7 .25 Dimensions Inches Millimeters A 5.98 152.0 B 2.44 62.0 D 5.39 137 .0 E 4.79 121 .7 G 3.72 94.5 H 0.60 15.14 J 0.53 13.5 K 0.31 7 .75 M 2.28 ±0.012 57 .95 ±0.3 N 1 .54 39.0 P 0.87 22.0 Q 0.017 ±0.012 0.45 ±0.3 R 0.55 14.0 S 0.47 12.0 T 0.24 6.0 U 0.31 8.0 V 0.26 6.5 W 0.62 15.64 X 0.28 ±0.012 7 .24 ±0.3 Y 0.15 3.81 Z 1 .95 ±0.012 49. 53±0.3 G2(8) Tr2 Tr1 Di2 Di1 Es2(9) (10) (11) C2E1 (7) C2E1 (6) Th TH1 (1) TH2 (2) G1(3) Cs1(5) Es1(4) NTC A D E FJ AR Z AA AY B AH AJ Y AL AM AM AK AG AE AD AC AS AN AQ AQ AG AT K AW AX AW AE 45° AU AV AP G L H P C X T S R R Q N V U W AB (4 PLACES) AF (4 PLACES) M K Y Y Y DETAIL "B" DETAIL "B"DETAIL "C" DETAIL "A" DETAIL "C" DETAIL "A"1 2 3 4 5 8 9 Tolerance Otherwise Specified (mm) The tolerance of size between terminals is assumed to ±0.4 Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1. 2

Dual IGBT NX-Series Module 2 04/13 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1700 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, TC = 125°C)*2 I C 300 Amperes Collector Current (Pulse)*3 IC 450 Amperes Collector Current (VGE = 15V , Pulse, Repetitive)*3 I CRM 900 Amperes Total Power Dissipation (TC = 25°C)*2,*4 Ptot 3000 Watts Emitter Current (TC = 25°C)*2,*4 IE*1 300 Amperes Emitter Current (Pulse)*3 IE*1 450 Amperes Emitter Current (Pulse, TC = 25°C)*2,*4 IERM*1 900 Amperes Maximum Junction Temperature Tj(max) 175 °C Maximum Case Temperature*2 T C(max) 125 °C Operating Junction Temperature Tj(op) -40 to +150 °C Storage Temperature Tstg -40 to +125 °C Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO 4000 Volts *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. 21 .2 Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. Th 27 .8 37 .7 41 .9 78.8 92.7 Tr2 23.0 32.4 35.4 46.4 Di2 Tr2Di2 Tr1 Tr1 Di1Di1 LABEL SIDE

Dual IGBT NX-Series Module 304/13 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 mA Gate-Emitter Leakage Current IGES V GE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) I C = 45mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) I C = 450A, VGE = 15V, Tj = 25°C*5 — 2.4 3.05 Volts (Terminal) I C = 450A, VGE = 15V, Tj = 125°C*5 — 2.9 — Volts I C = 450A, VGE = 15V, Tj = 150°C*5 — 3.0 — Volts Collector-Emitter Saturation Voltage VCE(sat) I C = 450A, VGE = 15V, Tj = 25°C*5 — 2.25 2.9 Volts (Chip) Input Capacitance Cies — — 79 nF Output Capacitance Coes V CE = 10V, VGE = 0V — — 8 nF Reverse Transfer Capacitance Cres — — 1 .36 nF Gate Charge QG V CC = 1000V, IC = 450A, VGE = 15V — 1656 — nC Turn-on Delay Time td(on) — 300 600 ns Rise Time tr V CC = 1000V, IC = 450A, VGE = ±15V, — 120 240 ns Turn-off Delay Time td(off) R G = 1 .2Ω, Inductive Load — 350 700 ns Fall Time tf — 120 240 ns Emitter-Collector Voltage VEC*1 I E = 450A, VGE = 0V, Tj = 25°C*5 — 5.05 6.25 Volts (Terminal) I E = 450A, VGE = 0V, Tj = 125°C*5 — 3.8 — Volts I E = 450A, VGE = 0V, Tj = 150°C*5 — 3.6 — Volts Emitter-Collector Voltage VEC*1 I E = 450A, VGE = 0V, Tj = 25°C*5 — 4.90 6.10 Volts (Chip) Reverse Recovery Time trr*1 V CC = 1000V, IE = 450A, VGE = ±15V — 100 200 ns Reverse Recovery Charge Qrr*1 R G = 1 .2Ω, Inductive Load — 90 — µC Turn-on Switching Energy per Pulse Eon V CC = 1000V, IC = IE = 450A, — 80 — mJ Turn-off Switching Energy per Pulse Eoff V GE = ±15V, RG = 1 .2Ω, — 98 — mJ Reverse Recovery Energy per Pulse Err*1 T j = 150°C, Inductive Load — 61 — mJ Internal Lead Resistance RCC' + EE' Main Terminals-Chip, — — 2.0 mΩ Per Switch,TC = 25°C*2 Internal Gate Resistance rg Per Switch — 1 .7 — Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 21 .2 Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. Th 27 .8 37 .7 41 .9 78.8 92.7 Tr2 23.0 32.4 35.4 46.4 Di2 Tr2Di2 Tr1 Tr1 Di1Di1 LABEL SIDE

Dual IGBT NX-Series Module 4 04/13 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Test Conditions Min. Typ. Max. Units Zero Power Resistance R25 T C = 25°C*2 4.85 5.00 5.15 kΩ Deviation of Resistance ∆R/R T C = 100°C, R100 = 493Ω -7 .3 — +7 .8 % B Constant B(25/50) Approximate by Equation*6 — 3375 — K Power Dissipation P25 T C = 25°C*2 — — 10 mW Thermal Resistance Characteristics Thermal Resistance, Junction to Case*2 R th(j-c)Q Per Inverter IGBT — — 0.05 K/W Thermal Resistance, Junction to Case*2 R th(j-c)D Per Inverter FWDi — — 0.08 K/W Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied — 15 — K/kW Case to Heatsink*2 (Per 1 Module)*7 Mechanical Characteristics Mounting Torque Mt Mounting to Heatsink, M6 Screw 31 35 40 in-lb M s Mounting to Heatsink, M5 Screw 22 27 31 in-lb Creepage Distance ds Terminal to Terminal 17 .0 — — mm Terminal to Baseplate 10.0 — — mm Clearance d a Terminal to Terminal 17 .5 — — mm Terminal to Baseplate 10.0 — — mm Weight m — 330 — Grams Flatness of Baseplate ec On Centerline X, Y*8 ±0 — +1 00 µm Recommended Operating Conditons, Ta = 25°C (DC) Supply Voltage VCC Applied Across C1-E2 — 1000 1200 Volts Gate (-Emitter Drive) Voltage VGE(on) Applied Across G1-Es1 / G2-Es2 14.0 15.0 16.5 Volts External Gate Resistance RG Per Switch 1 .2 — 27 Ω *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 B(25/50) = In( R25)/( ) R50 T25 T50 R 25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R 50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. 21 .2 Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. Th 27 .8 37 .7 41 .9 78.8 92.7 Tr2 23.0 32.4 35.4 46.4 Di2 Tr2Di2 Tr1 Tr1 Di1Di1 LABEL SIDE – : CONCAVE + : CONVEX – : CONCAVE X Y + : CONVEX MOUNTING SIDE MOUNTING SIDE MOUNTING SIDE

Dual IGBT NX-Series Module 504/13 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 0 1 3 652 4 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (INVERTER PART - TYPICAL) 102 103 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) 6 8 10 1412 16 18 20 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) OUTPUT CHARACTERISTICS (INVERTER PART - TYPICAL) 0 2 4 6 8 10 900 100 200 400 500 300 600 800 700 COLLECTOR CURRENT, IC, (AMPERES) 4.5 3.5 3.0 4.0 2.0 2.5 1.0 1.5 0.5 400 500 600 800700 900100 200 300 Tj = 25°C Tj = 25°C COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C IC = 600A IC = 450A IC = 180A VGE = 20V

Dual IGBT NX-Series Module 6 04/13 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CAPACITANCE, Cies, Coes, Cres, (nF) SWITCHING TIME, (ns) SWITCHING TIME, (ns) SWITCHING TIME, (ns) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE VS. VCE (INVERTER PART - TYPICAL) 100 102 103 102 101 100 10-1 10110-1 COLLECTOR CURRENT, IC, (AMPERES) 104 103 101 102 100 101 102 102 100 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) 103 COLLECTOR CURRENT, IC, (AMPERES) 104 103 101 102 102 100 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) 103 EXTERNAL GATE RESISTANCE, RG, (Ω) 104 103 102 101 SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) VGE = 0V Cies Coes Cres td(off) td(on) tr tf td(off) td(on) tr VCC = 1000V VGE = ±15V RG = 1.2/uni03A9 Tj = 125°C Inductive Load VCC = 1000V VGE = ±15V RG = 1.2/uni03A9 Tj = 150°C Inductive Load tf td(off) td(on) tr VCC = 1000V VGE = ±15V IC = 450A Tj = 125°C Inductive Load tf

Dual IGBT NX-Series Module 704/13 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com GATE CHARGE, QG, (nC) GATE CHARGE VS. VGE(INVERTER PART) 500 1500 2000 25001000 EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) 103 101 102 102 101 103 EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) 103 101 102 102 101 103 101100 102 EXTERNAL GATE RESISTANCE, RG, (Ω) 104 103 102 101 SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) SWITCHING TIME, (ns) GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr (A), trr (ns) REVERSE RECOVERY, Irr (A), trr (ns) IC = 450A VCC = 1000V VCC = 1000V VGE = ±15V RG = 1.2/uni03A9 Tj = 125°C Inductive Load Irr trr VCC = 1000V VGE = ±15V RG = 1.2/uni03A9 Tj = 150°C Inductive Load Irr trr td(off) td(on) tr VCC = 1000V VGE = ±15V IC = 450A Tj = 150°C Inductive Load tf

Dual IGBT NX-Series Module 8 04/13 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) GATE RESISTANCE, RG, (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 101 102 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 101 102 103 101100 102 101100 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) GATE RESISTANCE, RG, (Ω) 103 102 101 103 102 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) REVERSE RECOVERY ENERGY, Err, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) 103 101 100 102 102 101 100 10-1 103 101 100 102 102 101 100 10-1 VCC = 1000V VGE = ±15V IC = 450A Tj = 150°C Inductive Load VCC = 1000V VGE = ±15V RG = 1.2/uni03A9 Tj = 150°C Inductive Load Eon Eoff Err VCC = 1000V VGE = ±15V RG = 1.2/uni03A9 Tj = 125°C Inductive Load Eon Eoff Err Eon Eoff Err Eon Eoff Err VCC = 1000V VGE = ±15V IC = 450A Tj = 125°C Inductive Load

Dual IGBT NX-Series Module 904/13 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - MAXIMUM) 100 10-1 10-2 10-3 10-5 10-310-4 10-2 10-1 100 101 Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Single Pulse TC = 25°C Per Unit Base = R th(j-c) =

0.05 K/W

(IGBT) R th(j-c) =

0.08 K/W

(FWDi)