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450 Amperes/1200 Volts
105/13 Rev. 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Lo w Drive Power £ Lo w V CE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode Isolat ed Baseplate for Easy Heat Sinking Applications: A C Motor Control £ Motion/Ser vo Control £ Phot ovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM450DX-24S is a 1200V (V CES),
450 Ampere Dual IGBT Power
Module. Type Current Rating VCES Amperes V olts (x 50) CM 450 24 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 5.98 152.0 B 2.44 62.0 D 5.39 137 .0 E 4.79 121 .7 G 3.89 99.0 H 3.72 94.5 J 0.53 13.5 K 0.15 3.81 L 1 .64 41 .66 M 0.30 7 .75 N 1 .95 49.53 P 0.9 22.86 Q 0.55 14.0 R 0.87 22.0 S 0.67 17 .0 T 0.48 12.0 U 0.24 6.0 V 0.16 4.2 W 0.37 6.5 X 0.83 21 .14 Y M6 M6 Z 1 .53 39.0 Dimensions Inches Millimeters AB 2.26 57 .5 AC 0.22 Dia. 5.5 Dia. AD 0.6 1 5.0 AE 0.51 13.0 AF 0.27 7 AG 0.03 0.8 AH 0.81 20.5 AJ 0.12 3.0 AK 0.14 3.5 AL 0.26 6.5 AM 0.53 13.5 AN 0.15 3.81 AP 0.05 1 .15 AQ 0.025 0.65 AR 0.29 7 AS 0.05 1 .2 AT 0.17 Dia. 4.3 Dia. AU 0.102 Dia. 2.6 Dia. AV 0.088 Dia. 2.25 Dia. AW 0.12 3.0 AX 0.49 12.5 AY 0.14 3.75 G2(38) C2E1(24) C2E1(23) Tr2 Di2 Di1 Tr1 Es2(39) (47) (48) Th TH1 (1) TH2 (2)G1(15) Cs1(22) Es1(16) NTC DETAIL "B" A D E FJ J AR Z AA AB B AH AJ AX AW AL AMAK AE S AS AN AQ AF AG AY AT AU AV AP G H P C X T TS S Q R Q NV U U W AC (4 PLACES)M AD KK K Y (4 PLACES) DETAIL "A" DETAIL "B" DETAIL "A" 12 34 56 78 91 01 11 21 31 41 51 61 71 81 92 02 12 2 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 Tolerance Otherwise Specified (mm) The tolerance of size between terminals is assumed to ±0.4 Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1 .2 L
Dual IGBT NX-Series Module 2 05/13 Rev. 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1200 V olts Gate-Emitter Voltage (VCE = 0V) VGES ±20 V olts Collector Current (DC, TC = 119°C)*2,*4 IC 450 Amper es Collector Current (Pulse)*3 ICRM 900 Amper es Total Power Dissipation (TC = 25°C)*2,*4 Ptot 3405 Watts Emitter Current (TC = 25°C)*2 IE*1 450 Amper es Emitter Current (Pulse)*3 IERM*1 900 Amper es Module Characteristics Symbol Rating Units Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO 2500 V olts Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max) 175 °C Maximum Case Temperature*4 TC(max) 125 °C Operating Junction Temperature, Continuous Operation (Under Switching) Tj(op) -40 t o +150 °C Storage Temperature Tstg -40 t o +125 °C *1 R epresent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction t emperature (T j(max)) rating. *3 P ulse width and repetition rate should be such that device junction temperature (T j) does not e xceed Tj(max) rating. *4 C ase temperature (T C) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplat e and the heatsink side just under the chips. R efer to the figure to the right for chip location. The heatsink ther mal resistance should be measured just under the chips. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 0 0 26.3 27 .8 42.4 43.9 27 .7 29.2 43.043.4 51 .5 Di2 Di2 Di2 Tr1 Tr1 LABEL SIDE Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. Th 22.523.3 35.6 48.8 73.0 86.1 99.2 Di1 Tr2Tr2 Tr2 Di1 Di1Tr1
Dual IGBT NX-Series Module 305/13 Rev. 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate-Emitter Leakage Current IGES V GE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) I C = 45mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) I C = 450A, VGE = 15V, Tj = 25°C*5 — 1 .80 2.25 Volts (T erminal) I C = 450A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts I C = 450A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts Collector-Emitter Saturation Voltage VCE(sat) I C = 450A, VGE = 15V, Tj = 25°C*5 — 1 .70 2.15 Volts (Chip) I C = 450A, VGE = 15V, Tj = 125°C*5 — 1 .90 — Volts I C = 450A, VGE = 15V, Tj = 150°C*5 — 1 .95 — Volts Input Capacitance Cies — — 45 nF Output Capacitance Coes V CE = 10V, VGE = 0V — — 9.0 nF Reverse Transfer Capacitance Cres — — 0.75 nF Gate Charge QG V CC = 600V, IC = 450A, VGE = 15V — 1050 — nC Turn-on Delay Time td(on) — — 800 ns Rise Time tr V CC = 600V, IC = 450A, VGE = ±15V, — — 200 ns Turn-off Delay Time td(off) R G = 0Ω, Inductive Load — — 600 ns Fall Time tf — — 300 ns Emitter-Collector Voltage VEC*1 I E = 450A, VGE = 0V, Tj = 25°C*5 — 1 .80 2.25 Volts (T erminal) I E = 450A, VGE = 0V, Tj = 125°C*5 — 1 .80 — Volts I E = 450A, VGE = 0V, Tj = 150°C*5 — 1 .80 — Volts Emitter-Collector Voltage VEC*1 I E = 450A, VGE = 0V, Tj = 25°C*5 — 1 .70 2.15 Volts (Chip) I E = 450A, VGE = 0V, Tj = 125°C*5 — 1 .70 — Volts I E = 450A, VGE = 0V, Tj = 150°C*5 — 1 .70 — Volts Reverse Recovery Time trr*1 V CC = 600V, IE = 450A, VGE = ±15V — — 300 ns Reverse Recovery Charge Qrr*1 R G = 0Ω, Inductive Load — 24 — µC Turn-on Switching Energy per Pulse Eon V CC = 600V, IC = IE = 450A, VGE = ±15V — 54.9 — mJ Turn-off Switching Energy per Pulse Eoff R G = 0Ω, Tj = 150°C — 48.0 — mJ Reverse Recovery Energy per Pulse Err*1 Inductive Load — 32.4 — mJ Internal Lead Resistance RCC' + EE' Main Terminals-Chip, — — 0.7 mΩ P er Switch,TC = 25°C*4 Internal Gate Resistance rg Per Switch — 4.3 — Ω *1 R epresent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 C ase temperature (T C) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplat e and the heatsink side just under the chips. R efer to the figure to the right for chip location. The heatsink ther mal resistance should be measured just under the chips. *5 P ulse width and repetition rate should be such as to cause negligible temperature rise. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 0 0 26.3 27 .8 42.4 43.9 27 .7 29.2 43.043.4 51 .5 Di2 Di2 Di2 Tr1 Tr1 LABEL SIDE Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. Th 22.523.3 35.6 48.8 73.0 86.1 99.2 Di1 Tr2Tr2 Tr2 Di1 Di1Tr1
Dual IGBT NX-Series Module 4 05/13 Rev. 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Test Conditions Min. Typ. Max. Units Zero Power Resistance R25 T C = 25°C*4 4.85 5.00 5.15 kΩ Deviation of Resistance ∆R/R T C = 100°C*4, R100 = 493Ω -7 .3 — +7 .8 % B Constant B(25/50) Approximate by Equation*6 — 3375 — K Power Dissipation P25 T C = 25°C*4 — — 10 mW Thermal Resistance Characteristics Thermal Resistance, Junction to Case*4 R th(j-c)Q IGBT Part — — 44 K/kW Thermal Resistance, Junction to Case*4 R th(j-c)D FWDi Part — — 78 K/kW Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied, — 15 — K/kW Case to Heatsink*4 Per 1 Module*7 Mechanical Characteristics Mounting Torque M t Main Terminals, M6 Screw 31 35 40 in-lb Mounting Torque M s Mounting to Heatsink, M5 Screw 22 27 31 in-lb Creepage Distance ds Terminal to Terminal 11 .55 — — mm Terminal to Baseplate 12.32 — — mm Clearance d a Terminal to Terminal 10.00 — — mm Terminal to Baseplate 10.85 — — mm Weight m — 350 — Grams Flatness of Baseplate ec On Centerline X, Y*8 ±0 — ±100 µm Recommended Operating Conditons, Ta = 25°C DC Supply Voltage VCC Applied Across P-N Terminals — 600 850 Volts Gate-Emitter Drive Voltage VGE(on) Applied Across 13.5 15.0 16.5 Volts G*P -Es*P/G*N-Es*N Terminals External Gate Resistance RG Per Switch 0 — 10 Ω *4 C ase temperature (T C) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplat e and the heatsink side just under the chips. R efer to the figure to the right for chip location. The heatsink ther mal resistance should be measured just under the chips. *6 B(25/50) = In( R25)/( ) R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] *7 T ypical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *8 Baseplat e (mounting side) flatness measurement points (X, Y) are shown in the figure below. HEATSINK SIDE – : CONCAVE + : CONVEX – : CONCAVE X Y + : CONVEX HEATSINK SIDE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 0 0 26.3 27 .8 42.4 43.9 27 .7 29.2 43.043.4 51 .5 Di2 Di2 Di2 Tr1 Tr1 LABEL SIDE Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. Th 22.523.3 35.6 48.8 73.0 86.1 99.2 Di1 Tr2Tr2 Tr2 Di1 Di1Tr1
Dual IGBT NX-Series Module 505/13 Rev. 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 8 10 14 12 16 18 20 Tj = 25°C IC = 900A IC = 450A IC = 180A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) OUTPUT CHARACTERISTICS (TYPICAL) 0 2 4 6 8 10 VGE = 20V 1213.5 Tj = 25°C 900 200 100 400 300 600 500 800 700 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3.5 3.0 2.0 2.5 1.0 1.5 0.5 900 800500 600400100 200 300 700 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
Dual IGBT NX-Series Module 6 05/13 Rev. 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE VS. VCE(TYPICAL) 100 102 102 101 100 10-1 101 VGE = 0V Cies Coes Cres 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 125°C Inductive Load tf 103 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 150°C Inductive Load tf 103 EXTERNAL GATE RESISTANCE, RG, (/uni03A9) 103 10-1 100 101 101 102 SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V IC = 450A Tj = 125°C Inductive Load tf 102 CAPACITANCE, Cies, Coes, Cres, (nF) SWITCHING TIME, (ns) SWITCHING TIME, (ns) SWITCHING TIME, (ns)
Dual IGBT NX-Series Module 705/13 Rev. 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com EXTERNAL GATE RESISTANCE, RG, (/uni03A9) 103 10-1 100 101 101 102 SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V IC = 450A Tj = 150°C Inductive Load tf 102 GATE CHARGE, QG, (nC) GATE CHARGE VS. VGE 500 1000 1500 VCC = 600V IC = 450A EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 125°C Inductive Load Irr trr EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 150°C Inductive Load Irr trr SWITCHING TIME, (ns) GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr (A), trr (ns) REVERSE RECOVERY, Irr (A), trr (ns)
Dual IGBT NX-Series Module 8 05/13 Rev. 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com GATE RESISTANCE, RG, (Ω) 103 102 10-1 100 101 101 100 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 125°C VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 150°C VCC = 600V VGE = ±15V IC/IE = 450A Tj = 125°C COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 102 101 101 102 100 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 102 101 101 102 100 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Eon Eoff Err Eon Eoff Err Eon Eoff Err GATE RESISTANCE, RG, (Ω) 103 102 10-1 100 101 101 100 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V IC/IE = 450A Tj = 150°C Eon Eoff Err SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ)
Dual IGBT NX-Series Module 905/13 Rev. 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 100 10-1 10-2 10-3 10-5 10-310-4 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.44°K/kW (IGBT) R th(j-c) = 0.78°K/kW (FWDi) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')