CM400HA-24A

CM400HA-24A_10 POWEREX | Alldatasheet

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Technical content

Single IGBTMOD™ A-Series Module

400 Amperes/1200 Volts

101/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 108.0 C 0.63 16.0 D 0.30 7 .5 E 0.69 17 .5 F 1 .14 29.0 G 0.79 20.0 H 0.94 24.0 J 0.55 13.9 K 0.24 6.0 L 2.44 62.0 N 0.39 10.0 P 0.79 20.0 Q 0.91 23.0 R 0.33 8.5 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transis- tor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ DC Chopper £ Inverter £ UPS £ Forklift Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400HA-24A is a 1200V (VCES),

400 Ampere Single

IGBTMOD™ Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 400 24 Dimensions Inches Millimeters U M6 Metric M6 V M4 Metric M4 W 0.256 Dia. 6.5 Dia. X 0.79 20.0 Y 0.35 9.0 Z 0.43 11 .0 AA 0.53 13.55 AB 0.28 7 .0 AC 0.98 25.0 AD 1 .38 35.0 AE 0.45 11 .5 AF 0.2 5.0 AG 0.26 6.5 AH 0.13 3.2 AJ 0.32 8.2 C G E E A B F K J E D R AF AH AE AG AF AJ SAD U - THD.V -THD. (2 TYP.) W - DIA. (4 TYP.) Y Y X Z H G C C AA K D M N AB P Q (2 TYP.) L E E G C T AC

Single IGBTMOD™ A-Series Module 2 01/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM400HA-24A Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (DC, TC = 87°C)*4 I C 400 Amperes Peak Collector Current (Pulse, Repetitive)*2 I CM 800 Amperes Maximum Collector Dissipation (TC = 25°C)*2,*4 PC 2350 Watts Emitter Current (TC = 25°C) IE*1 400 Amperes Peak Emitter Current (Pulse, Repetitive)*2 I EM*1 800 Amperes Mounting Torque, M6 Main Terminal — 26 in-lb Mounting Torque, M6 Mounting — 26 in-lb Mounting Torque, M4 G(E) Terminal — 13 in-lb Weight — 480 Grams Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) VISO 2500 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate Leakage Current IGES ±VGE = VGES, VCE = 0V — — 1 .0 µA Gate-Emitter Threshold Voltage VGE(th) I C = 40mA, VCE = 10V 6.0 7 .0 8.0 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 400A, VGE = 15V, Tj = 25°C*3 — 2.1 3.0 Volts I C = 400A, VGE = 15V, Tj = 125°C*3 — 2.4 — Volts Forward Transfer Admittance |γfs| IC = 400A, VCE = 10V*3 120 — — sec Input Capacitance Cies — — 70 nf Output Capacitance Coes V CE = 10V, VGE = 0V — — 6 nf Reverse Transfer Capacitance Cres — — 1 .4 nf Total Gate Charge QG V CC = 600V, IC = 400A, VGE = 15V — 2000 — nC Inductive Turn-on Delay Time t d(on) — — 550 ns Load Rise Time tr V CC = 600V, IC = 400A, — — 180 ns Switch Turn-off Delay Time t d(off) V GE = ±15V, RG = 0.78Ω, — — 600 ns Time Fall Time tf Inductive Load — — 350 ns Diode Reverse Recovery Time trr*1 I E = 400A — — 250 ns Diode Reverse Recovery Charge Qrr*1 — 14.7 — µC Emitter-Collector Voltage VEC*1 I E = 400A, VGE = 0V*3 — — 3.8 Volts External Gate Resistance RG 0.78 — 10 Ω *1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(max) rating. *3 Pulse width and repetition rate should be such as to cause negligible temperature rise. *4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.

Single IGBTMOD™ A-Series Module 301/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT*4 — — 0.053 °C/W Thermal Resistance, Junction to Case R th(j-c)D Per FWDi*4 — — 0.080 °C/W Contact Thermal Resistance Rth(c-f) Case to Heatsink, — 0.02 — °C/W Thermal Grease Applied*4,*5 *4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips. *5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 102 101 100 10-1 10101 3425 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 68 10 1412 16 18 20 Tj = 25°C COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 200 600 800 VGE = 15V Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres IC = 800A IC = 400A IC = 160A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02 46 81 0 200 VGE = 20V Tj = 25°C 400 600 800 400 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = 15V RG = 0.78Ω Tj = 125°C Inductive Load tf 103 Tj = 25°C Tj = 125°C

Single IGBTMOD™ A-Series Module 4 01/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.053°C/W (IGBT) Rth(j-c) = 0.085°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 600 1200 1800 30002400 VCC = 600V EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY, Irr, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 VCC = 600V VGE = 15V RG = 0.78Ω Tj = 25°C Inductive Load VCC = 400V IC = 400A 103 VCC = 600V VGE = 15V RG = 0.78Ω Tj = 125°C Inductive Load COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) SWITCHING LOSS, (mJ/PULSE) 102 101 102 101 100 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) Irr trr VCC = 600V VGE = 15V IC = 400A Tj = 125°C Inductive Load GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, (mJ/PULSE) 103 06 842 102 101 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) Eon Eoff Err Eon Eoff Err