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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Chopper IGBTMOD™ NFH-Series Module

400 Amperes/1200 Volts

112/11 Rev. 0 Description: Powerex IGBTMOD™ Modules are designed for use high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM400E3Y6-24NFH is a 1200V (VCES), 400 Ampere Chopper IGBTMOD™ Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 400 24 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 108.0 B 2.44 62.0 F 0.29 7 .5 G 0.24 6.0 J 0.689 17 .5 H 0.59 15.0 K 0.244 6.2 L 0.16 4.0 M 0.56 14.2 N 1 .18 30.0 Dimensions Inches Millimeters P 0.79 20.0 Q 0.28 7 .0 R 0.26 Dia. Dia. 6.5 S 0.85 21 .5 T 0.98 25.0 U 0.94 24.0 V M6 Metric M6 V 0.16 4.0 W 0.71 18.0 X 0.55 14.0 Y 0.02 0.5 Z 0.33 8.5 AA 0.87 22.2 C2E1 E2 Tr2 Di2 Di1 C1 E1 (TH2) G1 (TH1) NTC C2E1 E2 C1 R (4 PLACES) LABEL D V NUTS (3 PLACES) K M L C S T T U P Q A W Q W W X X X Q Y Z AA F F B N G G H J H E

Chopper IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 12/11 Rev. 0 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Inverter IGBT/FWDi Part Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (Operation, TC = 25°C)*3 I C 400 Amperes Collector Current (Pulse, Repetitive)*2 I CRM 800 Amperes Total Power Dissipation (TC = 25°C)*2,*3 P tot 2190 Watts Emitter Current (Operation, TC = 25°C)*3 IE*1 50 Amperes Emitter Current (Pulse, Repetitive)*2 IERM*1 100 Amperes Clamp Diode Part Characteristics Symbol Rating Units Repetitive Peak Reverse Voltage VRRM 1200 Volts Forward Current (Operation, TC = 25°C)*3 IF 400 Amperes Forward Current (Pulse, Repetitive)*2 IFRM 800 Amperes Module Characteristics Symbol Rating Units Isolation Voltage (Charged Part to Baseplate, f= 60 Hz, AC 1 Minute) VISO 2500 Vrms Maximum Junction Temperature Tj(max) +150 °C Operating Junction Temperature Tj(op) -40 to +150 °C Storage Temperature Tstg -40 to +125 °C *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *3 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 18.4 34.4 24.4 34.5 0 77 .042.231 .8 30.4 52.4 0 60.1 Tr2Tr2 Th Di2 Di1 Di1 LABEL SIDE Each mark points to the center position of each chip. Tr2: IGBT Di2: FWDi Di1: ClampDi Th: NTC Thermistor

Chopper IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 312/11 Rev. 0 Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter IGBT/FWDi Part Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 mA Gate-Emitter Leakage Current IGES ±V GE = VGES, VCE = 0V — — 1 µA Gate-Emitter Threshold Voltage VGE(th) I C = 40mA, VCE = 10V 4.5 6.0 7 .5 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 400A, VGE = 15V, Tj = 25°C*4 — 5.0 6.5 Volts IC = 400A, VGE = 15V, Tj = 125°C*4 — 5.0 — Volts Input Capacitance Cies — — 63 nF Output Capacitance Coes V CE = 10V, VGE = 0V — — 5.3 nF Reverse Transfer Capacitance Cres — — 1 .2 nF Total Gate Charge QG V CC = 600V, IC = 400A, VGE = 15V — 1800 — nC Turn-on Delay Time td(on) — — 300 ns Rise Time tr V CC = 600V, IC = 400A, VGE = ±15V, — — 100 ns Turn-off Delay Time td(off) R G = 0.78Ω, Inductive Load — — 500 ns Fall Time tf — — 150 ns Emitter-Collector Voltage VEC*1 I E = 50A, VGE = 0V*4 — 2.8 3.8 Volts Internal Lead Resistance RCC' + EE' I C = 400A, TC = 25°C, — 0.53 — mΩ Chip - Terminals Internal Gate Resistance rg T C = 25°C — 0.8 — Ω External Gate Resistance RG 0.78 — 7 .8 Ω Clamp Diode Part Collector Cutoff Current IRRM V R = VRRM — — 1 mA Reverse Recovery Time trr V CC = 600V, IF = 400A, VGE = ±15V, — — 100 ns Reverse Recovery Charge Qrr R G = 0.78Ω, Inductive Load — 7 .0 — µC Emitter-Collector Voltage VFM I F = 400A*4 — 5.5 7 .0 Volts Internal Lead Resistance RCC' + EE' I F = 400A, TC = 25°C, — 0.53 — mΩ Chip - Terminals *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 Pulse width and repetition rate should be such as to cause negligible temperature rise.

Chopper IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 12/11 Rev. 0 Electrical Characteristics, Tj = 25°C unless otherwise specified NTC Thermistor Part Characteristics Symbol Test Conditions Min. Typ. Max. Units Zero Power Resistance R25 T C = 25°C*3 4.85 5.00 5.15 kΩ Deviation of Resistance ∆R/R R 100 = 493Ω, TC = 100°C*3 -7 .3 — +7 .8 % B Constant B(25/50) Approximate by Equation *5 — 3375 — K Power Dissipation P25 T C = 25°C*3 — — 10 mW Mechanical Characteristics Mounting Torque M t Main Terminals, M6 Screw 31 35 40 in-lb Mounting Torque M s Mounting, M6 Screw 31 35 40 in-lb Weight m — 400 — Grams Flatness of Baseplate ec On Centerline X, Y*6 -100 — + 100 µm Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified Thermal Resistance, Junction to Case R th(j-c)Q Per Inverter IGBT*3 — — 0.057 K/W Thermal Resistance, Junction to Case R th(j-c)D Per Inverter FWDi*3 — — 0.430 K/W Thermal Resistance, Junction to Case R th(j-c)D Per ClampDi*3 — — 0.098 K/W Contact Thermal Resistance, Rth(c-s) Thermal Grease Applied, — 0.02 — K/W Case to Heatsink*2 per 1/2 Module*3,*7 *3 Case temperature (TC) is measured on the surface (mounting side) of the baseplate just under the chips. Refer to the figure to the right for chip location. *5 B(25/50) = In( R25)/( ) R50 T25 T50 R 25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R 50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] *6 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure. *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. X – CONCAVE 3 mm + CONVEX – CONCAVE + CONVEX HEATSINK SIDE HEATSINK SIDE BOTTOMY 18.4 34.4 24.4 34.5 0 77 .042.231 .8 30.4 52.4 0 60.1 Tr2Tr2 Th Di2 Di1 Di1 LABEL SIDE Each mark points to the center position of each chip. Tr2: IGBT Di2: FWDi Di1: ClampDi Th: NTC Thermistor