CM400DY-34A

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400 Amperes/1700 Volts

101/13 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400DY -34A is a 1700V (VCES),

400 Ampere Dual IGBT Power

Module. Type Current Rating VCES Amperes Volts (x 50) CM 400 34 Dimensions Inches Millimeters A 5.12 130.0 C 0.39 10.0 D 0.26 Dia. 6.5 Dia. E 0.65 16.5 F 1 .42 36.0 G 1 .72 43.8 H 0.54 13.8 J 0.45 11 .5 K M4 M4 L 0.35 9.0 M 0.78 20.0 Dimensions Inches Millimeters N 1 .12 28.5 P 0.53 13.5 Q 1 .02 26.0 R 0.59 15.0 S 0.16 4.0 T 0.95 24.0 V 0.35 9.1 X M8 M8 Y 0.57 14.5 Z 0.80 20.5 Outline Drawing and Circuit Diagram C2E1 E1 (Es1) Tr1 Di1 Tr2 Di2 E2 (Es2) D - (4 TYP .) A C B C J C E S T M Q Q Q E U TERMINAL SCREW HOLE DEPTH TOLERANCE OTHERWISE SPECIFIED W E R C Z Y M M Y L L L L P N Q N AB C 1 2 X - (3 PLACES) K - (4 PLACES) V L M L M 3.5 AE F G H C2E1 E2 C1 Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 01/13 Rev. 2 0 0 27.8 55.9 74.1 1.2.2 Tr2 Tr2 Tr2 Tr2 Tr1 Tr1 Tr1 Di2 Di2 Di2 Di2 Di1 Di1 Di1 Di1 74.6 74.6 98.6 31.4 98.4 98.6 31.4 55.4 53.1 76.9 55.4 31.6 LABEL SIDE Tr1 / Tr2: IGBT, Di1 / Di2: FWDi Tr1 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol Rating Units Collector-Emitter Voltage (G-E Short-Circuited) VCES 1700 Volts Gate-Emitter Voltage (C-E Short-Circuited) VGES ±20 Volts Collector Current (DC, TC = 107°C)*2,*4 I C 400 Amperes Collector Current (Pulse, Repetitive)*3 I CRM 800 Amperes Total Power Dissipation (TC = 25°C)*2,*4 P tot 3780 Watts Emitter Current (TC = 25°C)*2,*4 IE*1 400 Amperes Emitter Current (Pulse, Repetitive)*3 IERM*1 800 Amperes Junction Temperature Tj -40 ~ +150 °C Storage Temperature Tstg -40 ~ +125 °C Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) Viso 3500 Volts *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating.

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 01/13 Rev. 2 Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES V CE = VCES, G-E Short-Circuited — — 1 .0 mA Gate-Emitter Leakage Current IGES V GE = VGES, C-E Short-Circuited — — 2.0 µA Gate-Emitter Threshold Voltage VGE(th) I C = 40mA, VCE = 10V 5.5 7 .0 8.5 Volts Collector-Emitter Saturation Voltage VCE(sat) I C = 400A, VGE = 15V, Tj = 25°C*5 — 2.2 2.8 Volts I C = 400A, VGE = 15V, Tj = 125°C*5 — 2.45 — Volts Input Capacitance Cies — — 98.8 nF Output Capacitance Coes V CE = 10V, G-E Short-Circuited — — 11 .2 nF Reverse Transfer Capacitance Cres — — 2.1 nF Gate Charge QG V CC = 1000V, IC = 400A, VGE = 15V — 2670 — nC Turn-on Delay Time td(on) — — 950 ns Rise Time tr V CC = 1000V, IC = 400A, VGE = ±15V, — — 300 ns Turn-off Delay Time td(off) R G = 1 .2Ω, Inductive Load — — 1000 ns Fall Time tf — — 350 ns Emitter-Collector Voltage VEC*1 I E = 400A, G-E Short-Circuited*5 — 2.3 3.0 Volts Reverse Recovery Time trr*1 V CC = 1000V, IE = 400A, VGE = ±15V — — 450 ns Reverse Recovery Charge Qrr*1 R G = 1 .2Ω, Inductive Load — 40 — µC Turn-on Switching Energy per Pulse Eon V CC = 1000V, IC = IE = 400A, — 197 .3 — mJ Turn-off Switching Energy per Pulse Eoff V GE = ±15V, RG = 1 .2Ω, — 117 .9 — mJ Reverse Recovery Energy per Pulse Err*1 T j = 125°C, Inductive Load — 98.5 — mJ Internal Gate Resistance rg Per Switch, TC = 25°C — 3.7 — Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 01/13 Rev. 2 0 0 27.8 55.9 74.1 1.2.2 Tr2 Tr2 Tr2 Tr2 Tr1 Tr1 Tr1 Di2 Di2 Di2 Di2 Di1 Di1 Di1 Di1 74.6 74.6 98.6 31.4 98.4 98.6 31.4 55.4 53.1 76.9 55.4 31.6 LABEL SIDE Tr1 / Tr2: IGBT, Di1 / Di2: FWDi Tr1 Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case*2 R th(j-c)Q Per IGBT — — 33 K/kW Thermal Resistance, Junction to Case*2 R th(j-c)D Per IFWDi — — 55 K/kW Contact Thermal Resistance, Rth(c-s) Thermal Grease Applied*6 — 19 — K/kW Case to Heatsink (Per 1/2 Module) Mechanical Characteristics Characteristics Symbol Test Conditions Min. Typ. Max. Units Mounting Torque Mt Main Terminals, M8 Screw 78 85 95 in-lb Auxiliary (G, E) Terminals, M4 Screw 11 13 15 in-lb M s Mounting to Heatsink, M6 Screw 31 35 40 in-lb Weight m — 1200 — Grams Flatness of Baseplate ec On Centerline X, Y*7 -100 — + 100 µm Recommended Operating Conditons, Ta = 25°C Characteristics Symbol Test Conditions Min. Typ. Max. Units (DC) Supply Voltage VCC Applied Across C1-E2 — 1000 1150 Volts Gate (-Emitter Drive) Voltage VGE(on) Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts External Gate Resistance RG Per Switch 1 .2 — 12 Ω *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. X – CONCAVE 3 mm + CONVEX – CONCAVE + CONVEX HEATSINK SIDE HEATSINK SIDE BOTTOMY

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 01/13 Rev. 2 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 25°C COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) IC = 800A IC = 400A IC = 160A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 2 4 6 8 10 5 10 15 20 VGE = 20V Tj = 25°C 200 400 600 800 400200 300 VCE = 15V Tj = 25°C Tj = 125°C 100 Tj = 25°C Tj = 125°C

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 01/13 Rev. 2 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 103 102 101 100 10-1 101 VGE = 0V Cies Coes Cres 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 101 104 103 102 SWITCHING TIME,tr, tf, (ns) SWITCHING TIME,td(on), td(off), (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 1000V VGE = ±15V RG = 1.2/uni03A9 Tj = 125°C Inductive Load tf 103 GATE RESISTANCE, RG, (/uni03A9) 104 100 101 102 103 SWITCHING TIME, td(on), tr (ns) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) td(off) td(on) tr VCC = 1000V VGE = ±15V IC = 400A Tj = 125°C Inductive Load tf 102 VCC = 1000V VGE = ±15V RG = 1.2/uni03A9 Tj = 125°C COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) SWITCHING ENERGY, Eon, Eoff, (mJ/PULSE) REVERSE RECOVERY ENERGY, Err, (mJ/PULSE) 103 102 101 102 101 102 101 100 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Eon Eoff Err

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 01/13 Rev. 2 GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 1000 2000 3000 4000 IC = 400A Tj = 25°C EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 VCC = 1000V VGE = ±15V RG = 1.2/uni03A9 Tj = 125°C Inductive Load Irr trr REVERSE RECOVERY, Irr (A), trr (ns) EXTERNAL GATE RESISTANCE, RG, (/uni03A9) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 103 100 101 102 101 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 1000V VGE = ±15V IC/IE = 400A Tj = 125°C INDUCTIVE LOAD Eon Eoff Err TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM)100 10-5 10-4 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = R th(j-c) =

33 K/kW

(IGBT) R th(j-c) =

55 K/kW

(FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') VCC = 1000V VCC = 800V