CM400DU-5F

CM400DU-5F POWEREX | Alldatasheet

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Technical content

Dual IGBTMOD™

400 Amperes /250 Volts

Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 108.0 B 2.44 62.0 F 0.67 17.0 G 0.16 4.0 H 0.24 6.0 J 0.59 15.0 K 0.55 14.0 Dimensions Inches Millimeters L 0.87 22.0 M 0.33 8.5 N 0.10 2.5 P 0.85 21.5 Q 0.98 25.0 R 0.11 2.8 SM 6 M 6 T 0.26 Dia. 6.5 Dia. U 0.002 0.05 Description: Pow erex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each tran- sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter- connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low V CE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ W elding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400DU-5F is a 250V (V CES ), 400 Ampere Dual IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 400 5 CM T - (4 TYP.) C2E1 E2 CL K D C A EB KK L R M J PQS - NUTS (3 TYP) TC MEASURE POINT Q U N F H G H C2E1 E2 C1

Trench Gate Design Dual IGBTMOD™

400 Amperes/250 Volts

Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM400DU-5F Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 250 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 400 Amperes Peak Collector Current (Tj ≤ 150°C) I CM 800* Amperes Emitter Current (Tc = 25°C) I E 400 Amperes Peak Emitter Current I EM 800* Amperes Maximum Collector Dissipation (Tc = 25°C) P c 890 Watts Mounting Torque, M6 Main Terminal – 40 in-lb Mounting Torque, M6 Mounting – 40 in-lb W eight – 400 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 1.0 mA Gate Leakage Current IGES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 40mA, VCE = 10V 3.0 4.0 5.0 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 400A, VGE = 10V, Tj = 25°C– 1.2 1.7 Volts IC = 400A, VGE = 10V, Tj = 125°C– 1.1 – Volts Total Gate Charge Q G VCC = 100V , IC = 400A, VGE = 10V – 1500 – nC Emitter-Collector Voltage* V EC IE = 400A, VGE = 0V – – 2.0 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 110 nf Output Capacitance C oes VCE = 10V, VGE = 0V – – 7.0 nf Reverse Transfer Capacitance C res –– 3.8 nf Resistive Turn-on Delay Time t d(on) VCC = 100V, IC = 400A, – – 850 ns Load Rise Time t r VGE1 = VGE2 = 10V, – – 400 ns Switch Turn-off Delay Time t d(off) R G = 6.3/H9024, Resistive – – 1100 ns Times Fall Time t f Load Switching Operation – – 500 ns Diode Reverse Recovery Time t rr IE = 400A – – 300 ns Diode Reverse Recovery Charge Q rr IE = 400A – 16.0 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)QP er IGBT 1/2 Module – – 0.14 °C/W Thermal Resistance, Junction to Case R th(j-c)DP er FWDi 1/2 Module – – 0.24 °C/W Thermal Resistance, Junction to Case Rth(j-c´)QP er IGBT 1/2 Module* – – 0.08 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.04 – °C/W * TC measured point is just under chip.

Trench Gate Design Dual IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 500 15001000 25002000 3000 VCC = 50V IC = 400A EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 Irr trr 103 102 101 REVERSE RECOVERY CURRENT, I rr, (AMPERES) COLLECTOR CURRENT, I C , (AMPERES) 103 101 102 103 102 101 td(off) td(on) tr VCC = 100V VGE = ±10V R G = 6.3 Ω Tj = 125°C VCC = 100V VGE = ±10V R G = 6.3 Ω Tj = 125°C SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 102 101 100 10-1 VGE = 0V f = 1MHz 101 C ies C oes C res 101 102 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 Tj = 25°C IC = 160A IC = 800A IC = 400A COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2.0 0 160 320 480 640 1.6 1.2 0.8 0.4 800 VGE = 15V Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 02468 1 0 640 480 320 160 800 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 480 160 320 540 800 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) 12345 VGE = 15V 6.5 6.25 5.75 Tj = 25oC 5.5 5.25 tf VCC = 100V

Trench Gate Design Dual IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.14°C/W Zth = Rth • (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.24°C/W Zth = Rth • (NORMALIZED VALUE)