CM400DU-24NFJ

CM400DU-24NFJ POWEREX | Alldatasheet

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Dual IGBTMOD™ NF J-Series Module

400 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 112/11 Rev. 1 Outline Drawing and Circuit Diagram Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400DU-24NF J is a 1200V (VCES), 400 Ampere Dual IGBTMOD™ Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 400 24 Dimensions Inches Millimeters A 4.33 110.0 B 3.15 80.0 F 0.83 21 .2 G 0.16 4.0 H 0.24 6.0 J 0.59 15.0 K 0.55 14.0 L 0.35 9.0 M 0.33 8.5 N 0.69 17 .5 P 0.85 21 .5 Q 0.98 25.0 Dimensions Inches Millimeters R 0.47 12.0 S M6 Metric M6 T 0.26 Dia. 6.5 Dia. U 0.4 10.0 V 0.02 0.5 W 0.87 22.2 X 0.72 18.25 Y 0.36 9.25 Z 0.71 18.0 AA 0.28 7 .0 AB 0.16 4.0 AC 0.11 2.8 AD 0.3 7 .5 AE 1 .23 31 .4 AF 0.21 5.3 H H V V V V G2E2E1G1 C2E1 C1 X B W E U Y A D PQQ Z K AA Z Z C F MAD M M L L AA AC AB S - NUTS (3 TYP) T - (4 TYP) LABEL C2E1 E2 C1 K K J GAF R N AE

Dual IGBTMOD™ NF J-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 12/11 Rev. 1 Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol Rating Units Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (Operation)*2 I C 400 Amperes Collector Current (Pulse)*2 I CM 800 Amperes Maximum Power Dissipation (TC = 25°C)*2,*4 P C 2450 Watts Emitter Current (Operation)*2 IE*1 400 Amperes Emitter Current (Pulse)*2 IEM*1 800 Amperes Isolation Voltage (Charged Part to Baseplate, f = 60 Hz, AC 1 Minute) VISO 2500 V rms Junction Temperature Tj -40 ~ +150 °C Storage Temperature Tstg -40 ~ +125 °C Mechanical Characteristics Characteristics Symbol Test Conditions Min. Typ. Max. Units Torque Strength M Main Terminals, M6 Screw 31 35 40 in-lb M Mounting, M6 Screw 31 35 40 in-lb Weight — 580 — Grams *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) is measured point is just under the chips. 31 .4 44.7 35.0 48.2 0 78.865.846.633.6 Tr2Tr2 Di2 Di2 Di1 Di1 Tr1 Tr1 LABEL SIDE Each mark points to the center position of each chip. Tr1 / Tr2: IGBT Di1 / Di2: FWDi Tolerance ±1 mm

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400DU-24NF J Dual IGBTMOD™ NF J-Series Module 312/11 Rev. 1 Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate Leakage Current IGES ±V GE = VGES, VCE = 0V — — 1 .4 µA Gate-Emitter Threshold Voltage VGE(th) I C = 40mA, VCE = 10V 4.5 6.0 7 .5 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 400A, VGE = 15V, Tj = 25°C*3 — 5.0 6.5 Volts I C = 400A, VGE = 15V, Tj = 125°C*3 — 5.0 — Volts Forward Transfer Admittance |γfs| I C = 400A, VCE = 10V*3 120 — — S Input Capacitance Cies — — 63 nF Output Capacitance Coes V CE = 10V, VGE = 0V — — 5.3 nF Reverse Transfer Capacitance Cres — — 1 .2 nF Total Gate Charge QG V CC = 600V, IC = 400A, VGE = 15V — 1800 — nC Turn-on Delay Time td(on) — — 300 ns Turn-on Rise Time tr V CC = 600V, IC = 400A, — — 100 ns Turn-off Delay Time td(off) V GE = ±15V, RG = 0.78Ω, — — 500 ns Turn-off Fall Time tf Inductive Load, — — 150 ns Reverse Recovery Time trr*1 I E = 400A — — 100 ns Reverse Recovery Charge Qrr*1 — 7 .0 — µC Emitter-Collector Voltage VEC*1 I E = 400A, VGE = 0V*3 — 5.5 7 .0 Volts Internal Gate Resistance RGint T c = 25°C, Per Switch — 3.0 — Ω External Gate Resistance RG 0.78 — 7 .8 Ω Thermal Resistance Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT Part*4 — — 0.051 K/W Thermal Resistance, Junction to Case R th(j-c)D Per FWDi Part*4 — — 0.093 K/W Contact Thermal Resistance Rth(c-f) Case to Heatsink, — 0.02 — K/W Thermal Grease Applied*4*5 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *3 Pulse width and repetition rate should be such as to cause negligible temperature rise. *4 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips. If using this value, thermal resistance of heatsink, Rth(f-a), should be measured just under the chips. *5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. 31 .4 44.7 35.0 48.2 0 78.865.846.633.6 Tr2Tr2 Di2 Di2 Di1 Di1 Tr1 Tr1 LABEL SIDE Each mark points to the center position of each chip. Tr1 / Tr2: IGBT Di1 / Di2: FWDi Tolerance ±1 mm

Dual IGBTMOD™ NF J-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 12/11 Rev. 1 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 103 102 101 100 10-1 1010 2 4 6531 7 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 8 10 1412 16 18 20 Tj = 25°C VGE = 0V Cies Coes Cres IC = 800A IC = 400A IC = 160A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 2 4 6 8 10 VGE = 20V Tj = 25°C 800 600 400 200 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 800 600 400 200 2010 155 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 600600400200 VGE = 15V Tj = 25°C Tj = 125°C 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 100 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive Load tf 103 Tj = 25°C Tj = 125°C GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE(TYPICAL) 500 1000 1500 25002000 IC = 400A VCC = 600V VCC = 400V EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive Load Irr trr REVERSE RECOVERY, Irr (A), trr (ns)

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400DU-24NF J Dual IGBTMOD™ NF J-Series Module 512/11 Rev. 1 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (TYPICAL) 100 10-5 10-4 10110-3 10-2 10-1 100 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.051°K/W (IGBT) R th(j-c) = 0.093°K/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE RESISTANCE, RG, (Ω) SWITCHING ENERGY, (mJ/PULSE) 102 10-1 100 101 100 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive Load VCC = 600V VGE = ±15V IC = 400A Tj = 125°C Inductive Load Eon Eoff Err Eon Eoff Err COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) SWITCHING ENERGY, (mJ/PULSE) 102 101 101 102 100 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)