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Dual IGBTMOD™ NFH-Series Module

400 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 17/11 Rev. 2 Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400DU-24NFH is a 1200V (VCES), 400 Ampere Dual IGBTMOD™ Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 400 24 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.33 110.0 B 3.15 80.0 F 0.83 21 .2 G 0.28 7 .0 H 0.24 6.0 J 0.59 15.0 K 0.55 14.0 L 0.35 9.0 M 0.33 8.5 N 0.69 17 .5 P 0.85 21 .5 Dimensions Inches Millimeters Q 0.98 25.0 R 1 .23 31 .4 S M6 Metric M6 T 0.26 Dia. 6.5 Dia. U 0.4 10.0 V 0.16 4.0 W 0.87 22.2 X 0.72 18.25 Y 0.36 9.25 Z 0.71 18.0 AA 0.11 2.8 AB 0.29 7 .5 AC 0.21 5.3 AD 0.47 12.0 H H V G2E2E1G1 C2E1 C1 X B W E U Y A D PQQ Z K G AC AD Z Z C F MAB AA V M M L L G S - NUTS (3 TYP) T - (4 TYP) LABEL C2E1 E2 Tr2 Tr1 Di1 Di2 K K J N R Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1. 2

Dual IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 7/11 Rev. 2 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM400DU-24NFH Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (TC = 25°C) IC 400* Amperes Peak Collector Current ICM 800* Amperes Emitter Current** (TC = 25°C) IE 400* Amperes Peak Emitter Current** IEM 800* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1040 Watts Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 2500 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb Weight — 580 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate Leakage Current IGES V GE = VGES, VCE = 0V — — 1 .4 µA Gate-Emitter Threshold Voltage VGE(th) I C = 40mA, VCE = 10V 4.5 6.0 7 .5 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 400A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts I C = 400A, VGE = 15V, Tj = 125°C — 5.0 — Volts Total Gate Charge QG V CC = 600V, IC = 400A, VGE = 15V — 1800 — nC Emitter-Collector Voltage VEC I E = 400A, VGE = 0V — — 3.5 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies — — 63 nF Output Capacitance Coes V CE = 10V, VGE = 0V — — 5.3 nF Reverse Transfer Capacitance Cres — — 1 .2 nF Inductive Turn-on Delay Time t d(on) — — 300 ns Load Rise Time tr V CC = 600V, IC = 400A, — — 100 ns Switch Turn-off Delay Time t d(off) V GE1 = VGE2 = 15V, RG = 0.78Ω, — — 500 ns Time Fall Time tf Inductive Load — — 150 ns Diode Reverse Recovery Time trr Switching Operation, — — 250 ns Diode Reverse Recovery Charge** Qrr I E = 400A — 16 — µC * Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Dual IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 37/11 Rev. 2 Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT 1/2 Module, T C Reference — — 0.12 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)D Per FWDi 1/2 Module, T C Reference — — 0.23 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)'Q Per IGBT 1/2 Module, — — 0.051 °C/W T C Reference Point Under Chips Thermal Resistance, Junction to Case R th(j-c)'D Per FWDi 1/2 Module, T C Reference — — 0.093 °C/W Point per Outline Drawing Contact Thermal Resistance Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.02 — °C/W External Gate Resistance RG 0.78 — 7 .8 Ω COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 103 102 101 100 10-1 10101 3425 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 68 10 1412 16 18 20 Tj = 25°C GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 0 5 15 20 VGE = 10V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres IC = 800A IC = 400A IC = 160A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02 46 81 0 VGE = 20V Tj = 25oC 800 400 600 200 800 400 600 200 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 800200 400 600 VGE = 15V Tj = 25°C Tj = 125°C 10-1

Dual IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 7/11 Rev. 2 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.12°C/W (IGBT) R th(j-c) = 0.23°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 500 1000 1500 25002000 VCC = 600V VCC = 400V IC = 400A COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 101 102 101 100 VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive Load C Snubber at Bus 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) ESW(on) ESW(off) GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 10-1 100 101 100 VCC = 600V VGE = ±15V IC = 400A Tj = 125°C Inductive Load C Snubber at Bus 101 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) ESW(on) ESW(off) GATE RESISTANCE, RG, (Ω) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 10-1 100 101 100 VCC = 600V VGE = ±15V IE = 400A Tj = 125°C Inductive Load C Snubber at Bus 101 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 101 102 101 100 VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive Load C Snubber at Bus 103 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) Err Err COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 100 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive Load tf 103 EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 102 101 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 25°C Inductive Load Irr trr