CM400DU-24F

CM400DU-24F POWEREX | Alldatasheet

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Dual IGBTMOD™ F-Series Module

400 Amperes/1200 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Description: Pow erex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low V CE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ W elding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400DU-24F is a 1200V (V CES ), 400 Ampere Dual IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 400 24 T - (4 TYP.) C2E1 RTC CL LC W - (4 PLACES) LABEL A F G HJKL M N P Q P R U V D X Y Z AA TC MEASURED POINTB C E S - (3 PLACES) RTC C2E1 E1 G1 E2 G2 Dimensions Inches Millimeters A5 .51 140.0 B5 .12 130.0 C5 .12 130.0 G0 .39 10.0 H0 .45 11.5 J0 .54 13.8 K1 .72 43.8 L1 .42 36.0 M0 .39 10.0 N0 .80 20.4 Dimensions Inches Millimeters P 0.57 14.5 Q 1.57 40.0 R 2.56 65.0 SM 8 M 8 T 0.32 8.0 U 0.32 8.0 WM 4 M 4 X 0.59 15.0 Y 0.35 9.0 Z 1.02 26.0 AA 0.79 20.0 Outline Drawing and Circuit Diagram

Dual IGBTMOD™ F-Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM400DU-24F Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1200 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 400 Amperes Peak Collector Current I CM 800* Amperes Emitter Current (Tc = 25°C) I E 400 Amperes Peak Emitter Current I EM 800* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P c 1100 Watts Mounting Torque, M8 Main Terminal – 95 in-lb Mounting Torque, M6 Mounting – 40 in-lb G(E) Terminal, M4 – 15 in-lb W eight – 1200 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 2 mA Gate Leakage Voltage I GES VGE = VCES , VCE = 0V – – 80 µA Gate-Emitter Threshold Voltage V GE(th) IC = 40mA, VCE = 10V 5.0 6 7.0 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 400A, VGE = 15V, Tj = 25°C– 1.8 2.4 Volts IC = 400A, VGE = 15V, Tj = 125°C– 1.9 – Volts Total Gate Charge Q G VCC = 600V , IC = 400A, VGE = 15V – 4400 – nC Emitter-Collector Voltage** V EC IE = 400A, VGE = 0V – – 3.2 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Dual IGBTMOD™ F-Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 160 nf Output Capacitance C oes VCE = 10V, VGE = 0V – – 6.8 nf Reverse Transfer Capacitance C res –– 4 n f Resistive Turn-on Delay Time t d(on) VCC = 600V, IC = 400A, – – 450 ns Load Rise Time t r VGE1 = VGE2 = 15V, – – 200 ns Switch Turn-off Delay Time t d(off) R G = 3.1/H9024,– – 1000 ns Times Fall Time t f Inductive Load – – 300 ns Diode Reverse Recovery Time* t rr Switching Operation – – 550 ns Diode Reverse Recovery Charge* Q rr IE = 400A – 23.6 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)QP er IGBT 1/2 Module, Tc Reference – – 0.11 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)RP er FWDi 1/2 Module, Tc Reference – – 0.13 °C/W Point per Outline Drawing Thermal Resistance R th(j-c')QP er IGBT 1/2 Module – – 0.045** °C/W Tc Reference Point Under Chips Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.010 – °C/W *Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). **If you use this value, Rth(f-a) should be measured just under the chips.

Dual IGBTMOD™ F-Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 01234 600 200 VGE = 20V 15 11 Tj = 25oC 400 800 9.5 8.5 COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3.0 0 200 400 600 800 2.5 2.0 1.5 0.5 1.0 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 06 8 1 2 1 6 14 1810 20 Tj = 25°C IC = 160A IC = 800A IC = 400A 101 102 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE(TYPICAL) 10-1 100 102 103 102 101 100 VGE = 0V 101 C oes C res C ies VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR CURRENT, I C , (AMPERES) 104 101 102 103 102 101 103 100 td(off) td(on) tf SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V R G = 3.1 Ω Tj = 125°C Inductive Load tr EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 trr Irr 102 101 100 REVERSE RECOVERY CURRENT, I rr, (AMPERES) GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 1000 30002000 600050004000 VCC = 400V IC = 400AVCC = 600V VGE = ±15V R G = 3.1 Ω Tj = 25°C Inductive Load VCC = 600V TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Per Unit Base R th(j-c) = 0.11°C/W (IGBT) R th(j-c) = 0.13 °C/W (FWDi) Single Pulse T C = 25°C Zth = Rth • (NORMALIZED VALUE) 10-1 10-2 10-3