CM400DU-12NFH

CM400DU-12NFH POWEREX | Alldatasheet

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Technical content

Dual IGBTMOD™

400 Amperes/600 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A4 .25 108.0 B2 .44 62.0 F0 .67 17.0 G0 . 1 6 4.0 H0 . 2 4 6.0 J0 .59 15.0 K0 .55 14.0 Dimensions Inches Millimeters L 0.87 22.0 M 0.33 8.5 N 0.10 2.5 P 0.85 21.5 Q 0.98 25.0 R 0.11 2.8 SM 6 M 6 T M6.5 M6.5 U 0.02 0.5 Description: Pow erex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each tran- sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter- connects are isolated from the heat sinking base plate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low V CE(sat) □ High Frequency Switching (50kHz to 60kHz) □ Isolated Base Plate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ W elding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400DU-12NFH is a 600V (V CES ), 400 Ampere High Pow er Dual Module. Current Rating V CES Type Amperes Volts (x 50) CM 400 12 S - NUTS (3 TYP) CM T - (4 TYP.) C2E1 E2 CL K D C A EB KK L R M J PQ Q U N F H G H C2E1 E2 C1

High Frequency Dual IGBTMOD™ Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM400DU-12NFH Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 600 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 400 Amperes Peak Collector Current I CM 800* Amperes Emitter Current (Tc = 25°C) I E 400 Amperes Peak Emitter Current I EM 800* Amperes Maximum Collector Dissipation (Tj < 150°C) P c 960 Watts Maximum Collector Dissipation (Tj < 150°C) P c' 1640 Watts Mounting Torque, M6 Main Terminal – 40 in-lb Mounting Torque, M6 Mounting – 40 in-lb W eight – 400 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 1 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 40mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 400A, VGE = 15V, Tj = 25°C– 2.0 2.7 Volts IC = 400A, VGE = 15V, Tj = 125°C– 1.95 – Volts Total Gate Charge Q G VCC = 300V , IC = 400A, VGE = 15V – 2480 – nC Emitter-Collector Voltage* V EC IE = 400A, VGE = 0V – – 2.6 Volts * Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 110 nF Output Capacitance C oes VCE = 10V, VGE = 0V – – 7.2 nF Reverse Transfer Capacitance C res –– 4.0 nF Resistive Turn-on Delay Time t d(on) VCC = 300V, IC = 400A, – – 400 ns Load Rise Time t r VGE1 = VGE2 = 15V, – – 200 ns Switch Turn-off Delay Time t d(off) R G = 3.1/H9024, Inductive – – 700 ns Times Fall Time t f Load Switching Operation – – 150 ns Diode Reverse Recovery Time* t rr IE = 400A – – 200 ns Diode Reverse Recovery Charge* Q rr – 7.7 – µC * Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

High Frequency Dual IGBTMOD™ Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units External Gate Resistance R G 1.6 — 16 Ω Thermal Resistance, Junction to Case R th(j-c)QP er IGBT 1/2 Module – – 0.13 °C/W Thermal Resistance, Junction to Case Rth(j-c')QT C measured Point is just — — 0.076* °C/W Under the Chips Thermal Resistance, Junction to Case R th(j-c)DP er FWDi 1/2 Module – – 0.18 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.04 – °C/W * If you use this value, Rth(f-a) should be measured just under the chips. COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE(TYPICAL) 100 102 103 102 101 100 101 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, I E, (AMPERES) GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 68 1 0 1 4 12 18 16 20 Tj = 25°C COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3.0 1.5 2.5 2.0 02 0 0 6 0 08 0 0 1.0 0.5 VGE = 15V Tj = 25°C Tj = 125°C VEC = 300V VGE = ±15V R G = 3.1 Tj = 125°C ESW(on) ESW(off) Tj = 25°C VGE = 0V C ies C oes C res IC = 800A IC = 400A IC = 160A COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 01234 5 500 600 200 100 VGE = 20V 7.5 9.5 1015 8.5 Tj = 25oC 400 300 700 800 400 10-1 102 103 102 101 100 10-1 101 COLLECTOR-CURRENT, I C , (AMPERES) SWITCHING LOSS, E SW( on), ESW( off), (mJ/PULSE) SWITCHING LOSS CHARACTERISTICS (TYPICAL)

High Frequency Dual IGBTMOD™ Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth  (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.13°C/W 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Single Pulse T C = 25°C Per Unit Base = R th(j-c) = 0.18°C/W NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) Zth = Rth  (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE CHARACTERISTICS (TYPICAL) 500 1000 2000 35001500 25003000 VCC = 300V VCC = 200V IC = 400A EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 Irr trr 103 102 101 REVERSE RECOVERY CURRENT, I rr, (AMPERES) COLLECTOR CURRENT, I C , (AMPERES) 103 101 102 103 102 101 td(off) td(on) tr VCC = 300V VGE = ±15V R G = 3.1 Ω Tj = 125°C VCC = 300V VGE = ±15V R G = 3.1 Ω Tj = 125°C SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) tf