CM400C1Y-24S

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Dual (AC Switch) IGBT S-Series Module

350 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 12/12 Rev. 0 Description: Powerex Dual IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM400C1Y -24S is a 1200V (VCES), 350 Ampere Dual AC Switch IGBT Power Module. Current Rating VCES Type Amperes Volts (x 50) CM 350 24 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.33 110.0 B 3.15 80.0 F 0.98 25.0 G 0.24 6.0 H 0.59 15.0 J 0.81 20.5 K 0.55 14.0 L 0.26 Dia. 6.5 Dia. M M6 Metric M6 N 1 .18 30.0 P 0.71 18.0 Dimensions Inches Millimeters Q 0.28 7 .0 R 0.84 21 .2 S 0.33 8.5 T 1 .10 28.0 U 0.16 4.0 V 0.11 2.8 W 0.29 7 .5 X 0.21 5.3 Y 0.26 6.7 Z 0.85 21 .5 AA 0.47 12.0 AB t = 0.02 t = 0.5 A W FF N J G G HEB L (4 PLACES) D M (3 PLACES) AB (TAB #110) K K K P P P QQ V Z Y X AA V U C T S R C2E1 E2 C1 E2 (Es2) E1 (Es1) C1E2C2E1 Tr2 Di2 Tr1 Di1 LABEL Tolerance Otherwise Specified Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1. 2

Dual (AC Switch) IGBT S-Series Module 2 12/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol Rating Units Collector-Emitter Voltage (G-E Short-Circuited) VCES 1200 Volts Gate-Emitter Voltage (C-E Short-Circuited) VGES ±20 Volts Collector Current (DC, TC = 124°C)*2,*4 I C 350 Amperes Collector Current (Pulse, Repetitive)*3 I CRM 800 Amperes Total Power Dissipation (TC = 25°C)*2,*4 Ptot 2670 Watts Emitter Current*2,*4 IE*1 350 Amperes Emitter Current (Pulse, Repetitive)*3 IERM*1 800 Amperes Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO 2500 Volts Maximum Junction Temperature Tj(max) 175 °C Maximum Case Temperature*2 T C(max) 125 °C Operating Junction Temperature Tj(opr) -40 to +150 °C Storage Temperature Tstg -40 to +125 °C *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. 24.6 37.8 65.8 79.0 Di1 Di1 Tr2 Tr1 Tr1Di2 Tr2 Di2 35.3 48.8 30.7 44.2 LABEL SIDE Tr1/Tr2: IGBT Di1/Di2: FWDi

Dual (AC Switch) IGBT S-Series Module 312/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES V CE = VCES, G-E Short-Circuited — — 1 mA Gate-Emitter Leakage Current IGES V GE = VGES, C-E Short-Circuited — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) I C = 40mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) I C = 400A, VGE = 15V, Tj = 25°C*5 — 1 .85 2.30 Volts (Terminal) I C = 400A, VGE = 15V, Tj = 125°C*5 — 2.05 — Volts I C = 400A, VGE = 15V, Tj = 150°C*5 — 2.10 — Volts Collector-Emitter Saturation Voltage VCE(sat) I C = 400A, VGE = 15V, Tj = 25°C*5 — 1 .70 2.15 Volts (Chip) I C = 400A, VGE = 15V, Tj = 125°C*5 — 1 .90 — Volts I C = 400A, VGE = 15V, Tj = 150°C*5 — 1 .95 — Volts Input Capacitance Cies — — 40 nF Output Capacitance Coes V CE = 10V, G-E Short-Circuited — — 8.0 nF Reverse Transfer Capacitance Cres — — 0.66 nF Gate Charge QG V CC = 600V, IC = 400A, VGE = 15V — 934 — nC Turn-on Delay Time td(on) — — 800 ns Rise Time tr V CC = 600V, IC = 400A, VGE = ±15V, — — 200 ns Turn-off Delay Time td(off) R G = 0Ω, Inductive Load — — 600 ns Fall Time tf — — 300 ns Emitter-Collector Voltage VEC*1 I E = 400A, VGE = 0V, Tj = 25°C*5 — 1 .85 2.30 Volts (Terminal) I E = 400A, VGE = 0V, Tj = 125°C*5 — 1 .85 — Volts I E = 400A, VGE = 0V, Tj = 150°C*5 — 1 .85 — Volts Emitter-Collector Voltage VEC*1 I E = 400A, VGE = 0V, Tj = 25°C*5 — 1 .70 2.15 Volts (Chip) I E = 400A, VGE = 0V, Tj = 125°C*5 — 1 .70 — Volts I E = 400A, VGE = 0V, Tj = 150°C*5 — 1 .70 — Volts Reverse Recovery Time trr*1 V CC = 600V, IE = 400A, VGE = ±15V — — 300 ns Reverse Recovery Charge Qrr*1 R G = 0Ω, Inductive Load — 21 .4 — µC Turn-on Switching Energy per Pulse Eon V CC = 600V, IC = IE = 400A, — 39.8 — mJ Turn-off Switching Energy per Pulse Eoff V GE = ±15V, RG = 0Ω, — 44.9 — mJ Reverse Recovery Energy per Pulse Err*1 T j = 150°C, Inductive Load — 35.2 — mJ Internal Gate Resistance rg Per Switch — 4.9 — Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

Dual (AC Switch) IGBT S-Series Module 4 12/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Thermal Resistance Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case*2 R th(j-c)Q Per IGBT — — 56 K/kW Thermal Resistance, Junction to Case*2 R th(j-c)D Per IFWDi — — 95 K/kW Contact Thermal Resistance, Rth(c-s) Thermal Grease Applied — 18 — K/kW Case to Heatsink*2 (Per 1/2 Module)*6 Mechanical Characteristics Characteristics Symbol Test Conditions Min. Typ. Max. Units Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb M s Mounting to Heatsink, M6 Screw 31 35 40 in-lb Weight m — 580 — Grams Flatness of Baseplate ec On Centerline X, Y*7 -100 — + 100 µm Recommended Operating Conditons, Ta = 25°C Characteristics Symbol Test Conditions Min. Typ. Max. Units (DC) Supply Voltage VCC Applied Across C1-E2 — 600 850 Volts Gate (-Emitter Drive) Voltage VGE(on) Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts External Gate Resistance RG Per Switch 0 — 10 Ω *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. X BOTTOM – CONCAVE 3 mm + CONVEX – CONCAVE + CONVEX BOTTOM BOTTOM LABEL SIDE Y 24.6 37.8 65.8 79.0 Di1 Di1 Tr2 Tr1 Tr1Di2 Tr2 Di2 35.3 48.8 30.7 44.2 LABEL SIDE Tr1/Tr2: IGBT Di1/Di2: FWDi

Dual (AC Switch) IGBT S-Series Module 512/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CHIP - TYPICAL) 102 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) 6 8 10 1412 16 18 20 Tj = 25°C IC = 800A IC = 400A IC = 160A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (CHIP - TYPICAL) 0 2 4 6 8 10 VGE = 20V 1213.5 Tj = 25°C 800 500 600 700 400 300 100 200 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) 3.5 2.5 3.0 2.0 1.5 0.5 1.0 800100 200 300 400 500 600 700 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C

Dual (AC Switch) IGBT S-Series Module 6 12/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 102 101 10-1 100 101 VGE = 0V Cies Coes Cres 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 125°C Inductive Load tf 103 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 150°C Inductive Load tf 103 SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V IC = 400A Tj = 125°C Inductive Load tf GATE RESISTANCE, RG, (/uni03A9) 103 10-1 100 101 101 102 104 102 103 SWITCHING TIME, td(on), tr (ns) SWITCHING TIME, td(off), tf (ns) 102

Dual (AC Switch) IGBT S-Series Module 712/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 500 1000 1500 VCC = 600V IC = 400A Tj = 25°C EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 125°C Inductive Load Irr trr REVERSE RECOVERY, Irr (A), trr (ns) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 150°C Inductive Load Irr trr REVERSE RECOVERY, Irr (A), trr (ns) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) SWITCHING TIME, td(on), tr (ns) 104 102 103 SWITCHING TIME, td(off), tf (ns) GATE RESISTANCE, RG, (/uni03A9) 103 10-1 100 101 101 102 102 td(on) VCC = 600V VGE = ±15V IC = 600A Tj = 150°C Inductive Load td(off) tr tf

Dual (AC Switch) IGBT S-Series Module 8 12/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com GATE RESISTANCE, RG, (/uni03A9) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) SWITCHING ENERGY, Eon, Eoff, (mJ/PULSE) SWITCHING ENERGY, Eon, Eoff, (mJ/PULSE) 102 101 101 102 10-1 100 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Eon Eoff Err VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 125°C Eon Eoff Err VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 150°C COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) REVERSE RECIVERY ENERGY, Err, (mJ/PULSE) REVERSE RECIVERY ENERGY, Err, (mJ/PULSE) 102 101 101 102 10-1 100 103 102 100 101 103 102 100 101 103 103 102 10-1 100 101 102101 103 102 10-1 100 101 102 101 100 102 101 100 102101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) GATE RESISTANCE, RG, (/uni03A9) SWITCHING ENERGY, Eoff, (mJ) SWITCHING ENERGY, Eoff, (mJ) SWITCHING ENERGY, Eon, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V IC/IE = 400A Tj = 125°C Eon Eoff Err VCC = 600V VGE = ±15V IC/IE = 400A Tj = 150°C Eon Eoff Err INDUCTIVE LOAD, PER PULSE INDUCTIVE LOAD, PER PULSE INDUCTIVE LOAD, PER PULSE INDUCTIVE LOAD, PER PULSE

Dual (AC Switch) IGBT S-Series Module 912/12 Rev. 0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 100 10-5 10-4 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = R th(j-c) =

56 K/kW

(IGBT) R th(j-c) =

95 K/kW

(FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')