CM350DU-5F

CM350DU-5F POWEREX | Alldatasheet

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Technical content

Dual IGBTMOD™

350 Amperes /250 Volts

Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram 361 Dimensions Inches Millimeters A 4.33 110.0 C 3.15 80.0 E 0.55 14.0 F 0.86 21.75 G 0.94 24.0 H 0.24 6.0 Dimensions Inches Millimeters J 0.59 15.0 K 0.26 Dia. 6.5 Dia. M 0.71 18.0 N 0.33 8.5 P 0.28 7.0 Q 0.83 21.0 R 0.98 25.0 CM A C D F B ETC Measured Point R3 - M6 NUTS R G L NM Q C2E1 MPPM K 4 - Mounting Holes 0.110 - 0.5 Tab J H H Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module con- sists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem- bly and thermal management. Features: h Low Drive Power h Low V CE(sat) h Discrete Super-Fast Recovery Free-Wheel Diode h High Frequency Operation (15-20kHz) h Isolated Baseplate for Easy Heat Sinking Applications: h DC Motor Control h Boost Regulator Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM350DU-5F is a 250V (V CES ), 350 Ampere Trench Gate Design Dual IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 350 5

Trench Gate Design Dual IGBTMOD™

350 Amperes/250 Volts

Powerex, Inc., 200 Hillis Street, Youngw ood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM350DU-5F Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 250 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 350 Amperes Peak Collector Current (Tj ≤ 150°C) I CM 700 Amperes Emitter Current (Tc = 25°C) I E 350 Amperes Peak Emitter Current I EM 700* Amperes Maximum Collector Dissipation (Tc = 25°C) P c 960 Watts Mounting Torque, M6 Main Terminal – 26 in-lb Mounting Torque, M6 Mounting – 26 in-lb Weight – 520 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES , VGE = 0V – – 1 mA Gate Leakage Current IGES VGE = VCES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 35mA, VCE = 10V 3.0 4.0 5.0 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 350A, VGE = 10V, Tj = 25°C – 1.2 1.7 Volts IC = 350A, VGE = 10V , Tj = 125°C – 1.10 – Volts Total Gate Charge Q G VCC = 100V, IC = 350A, VGE = 10V – 1320 – nC Emitter-Collector Voltage* V EC IE = 350A, VGE = 0V – – 2.0 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 9 9 n f Output Capacitance C oes VCE = 10V, VGE = 0V – – 4.5 nf Reverse Transfer Capacitance C res – – 3.4 nf Resistive Turn-on Delay Time t d(on) VC C = 100V, IC = 350A, – – 1100 ns Load Rise Time t r VGE1 = VGE2 = 10V, – – 2400 ns Switch Turn-off Delay Time t d(off) R G = 7.1Ω , Resistive – – 900 ns Times Fall Time t f Load Switching Operation – – 500 ns Diode Reverse Recovery Time t rr IE = 350A, diE/dt = -700A/ms – – 300 ns Diode Reverse Recovery Charge Q rr IE = 350A, diE/dt = -700A/ms – 5.7 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c) Per IGBT – – 0.13 °C/W Thermal Resistance, Junction to Case R th(j-c) Per Free-Wheel Diode – – 0.19 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.010 – °C/W 362

Trench Gate Design Dual IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 363 EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 trr Irr di/dt = -700A/µsec Tj = 25°C 103 102 101 REVERSE RECOVERY CURRENT, I rr, (AMPERES) COLLECTOR CURRENT, I C , (AMPERES) 104 101 102 103 103 102 101 td(off) tr VCC = 100V VGE = –10V R G = 7.1 Ω Tj = 125°C tf SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(on) COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 102 101 100 10-1 VGE = 0V f = 1MHz 101 C ies C oes C res 100 101 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 3 6 9 12 15 Tj = 25°C IC = 140A IC = 700A IC = 350A COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 012345 420 140 VGE = 15V 5.5 4.5 Tj = 25oC 280 560 700 5.0 4.75 5.25 5.75 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 02468 1 0 560 420 280 140 700 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2.0 0 140 280 420 560 1.6 1.2 0.8 0.4 700 VGE = 10V Tj = 25°C Tj = 125°C GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 0.7 1.4 2.1 2.8 VCC = 100V VCC = 50V IC = 350A

Trench Gate Design Dual IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 364 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.19°C/W Zth = R th

• (NORMALIZED VALUE) TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.13°C/W Zth = R th
• (NORMALIZED VALUE) 10-1 10-2 10-3