CM300HA-24H

CM300HA-24H POWEREX | Alldatasheet

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Single IGBTMOD™ H-Series Module

300 Amperes/1200 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.21 107.0 B 3.661 ±0.01 93.0 ±0.25 C 2.44 62.0 E 1.42 Max. 36.0 Max. F 1.34 34.0 G 1.18 30.0 H 1.14 29.0 J 0.98 Max. 25.0 Max. K 0.94 24.0 L 0.93 23.5 Dimensions Inches Millimeters M 0.83 21.0 N 0.69 17.5 P 0.63 16.0 Q 0.51 13.0 R 0.43 11.0 S 0.35 9.0 T 0.28 7.0 U 0.12 3.0 V 0.26 Dia. Dia. 6.5 W M6 Metric M6 X M4 Metric M4 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem- bly and thermal management. Features: □ Low Drive Power □ Low V CE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300HA-24H is a 1200V CES ), 300 Ampere Single IGBTMOD™ Power Module. Type Current Rating V CES Amperes Volts (x 50) CM 300 24 U R K E J T L K E C E G B G NHQ D F A PS C M T W - M6 THD. (2 TYP.) X - M4 THD. (2 TYP.) V - DIA. (4 TYP.)

Single IGBTMOD ™ H-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM300HA-24H Units Junction Temperature T j –40 to 150 °C Storage Temperature T stg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1200 Volts Gate-Emitter Voltage V GES ±20 Volts Collector Current IC 300 Amperes Peak Collector Current I CM 600* Amperes Diode Forward Current I F 300 Amperes Diode Forward Surge Current I FM 600* Amperes Power Dissipation Pd 2100 Watts Max. Mounting Torque M6 Terminal Screws – 26 in-lb Max. Mounting Torque M6 Mounting Screws – 26 in-lb Module Weight (T ypical) – 400 Grams V Isolation VRMS 2500 Volts * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V –– 1.0 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V –– 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 30mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 300A, VGE = 15V – 2.5 3.4 Volts IC = 300A, VGE = 15V, Tj = 150°C – 2.25 – Volts Total Gate Charge Q G VCC = 600V, IC = 300A, VGS = 15V – 1500 – nC Diode Forward Voltage V FM IE = 300A, VGS = 0V –– 3.4 Volts Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 60 nF Output Capacitance C oes VGE = 0V, VCE = 10V , f = 1MHz –– 21 nF Reverse Transfer Capacitance C res –– 12 nF Resistive Turn-on Delay Time t d(on) –– 250 ns Load Rise Time t r VCC = 600V, IC = 300A –– 500 ns Switching Turn-off Delay Time t d(off) VGE1 = VGE2 = 15V, RG = 1.0Ω –– 350 ns Times Fall Time t f –– 350 ns Diode Reverse Recovery Time t rr IE = 300A, diE/dt = –600A/µs –– 250 ns Diode Reverse Recovery Charge Q rr IE = 300A, diE/dt = –600A/µs – 2.23 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c) Per IGBT –– 0.06 °C/W Thermal Resistance, Junction to Case R th(j-c) Per FWDi –– 0.12 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied –– 0.04 °C/W

Single IGBTMOD ™ H-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02468 1 0 300 100 VGE = 20V 15 12 Tj = 25oC 200 400 500 600 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 400 300 200 100 600 500 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 100 200 300 500 600 VGE = 15V Tj = 25°C Tj = 125°C 400 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 Tj = 25°C IC = 120A IC = 600A IC = 300A 101 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 102 101 100 10-1 VGE = 0V f = 1MHz 101 C ies C oes C res EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 trr Irr 102 101 100 REVERSE RECOVERY CURRENT, I rr, (AMPERES) di/dt = -600A/µsec Tj = 25°C GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 400 800 1200 1600 2000 VCC = 400V 2400 VCC = 600V IC = 300A COLLECTOR CURRENT, I C , (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 td(off) td(on) tr VCC = 600V VGE = ±15V R G = 1Ω Tj = 125°C tf td (on), tr, td (off), tf (ns)

Single IGBTMOD ™ H-Series Module Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.06°C/W Zth = Rth • (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.12°C/W Zth = Rth • (NORMALIZED VALUE) 10-1 10-2 10-3