CM300DY-34A

CM300DY-34A POWEREX | Alldatasheet

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Technical content

Dual IGBTMOD™ A-Series Module

300 Amperes/1700 Volts

101/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ UPS £ Battery Powered Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DY -34A is a 1700V (VCES),

300 Ampere Dual IGBTMOD™

Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 300 34 Outline Drawing and Circuit Diagram A W FF B N J L (4 PLACES) D M NUTS (3 PLACES) G G H KKK PP P T THICK U WIDTHQQ VC S R C1E2C2E1 LABEL C2E1 E2 C1 E Dimensions Inches Millimeters A 4.33 110.0 B 3.15 80.0 F 0.98 25.0 G 0.24 6.0 H 0.59 15.0 J 0.81 20.5 K 0.55 14.0 L 0.26 Dia. Dia. 6.5 Dimensions Inches Millimeters M M6 Metric M6 N 1 .18 30.0 P 0.71 18.0 Q 0.28 7 .0 R 0.83 21 .2 S 0.33 8.5 T 0.02 0.5 U 0.110 2.8 V 0.16 4.0 W 0.85 21 .5

Dual IGBTMOD™ A-Series Module 2 01/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM300DY-34A Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1700 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (DC, TC = 108°C)*4 I C 300 Amperes Peak Collector Current (Pulse Repetition)*2 I CM 600 Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)*2,*4 P C 2900 Watts Emitter Current (TC = 25°C) IE*1 300 Amperes Peak Emitter Current (Pulse Repetition)*2 I EM*1 600 Amperes Mounting Torque, M5 Main Terminal — 30 in-lb Mounting Torque, M6 Mounting — 40 in-lb Weight — 580 Grams Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) VISO 3500 Volts Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate Leakage Current IGES V GE = VGES, VCE = 0V — — 2.0 µA Gate-Emitter Threshold Voltage VGE(th) I C = 30mA, VCE = 10V 5.5 7 .0 8.5 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 300A, VGE = 15V, Tj = 25°C*3 — 2.2 2.8 Volts I C = 300A, VGE = 15V, Tj = 125°C*3 — 2.45 — Volts Total Gate Charge QG V CC = 1000V, IC = 300A, VGE = 15V — 2000 — nC Emitter-Collector Voltage VEC*1 I E = 300A, VGE = 0V*3 — — 3.0 Volts Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies — — 74.0 nf Output Capacitance Coes V CE = 10V, VGE = 0V — — 8.4 nf Reverse Transfer Capacitance Cres — — 1 .6 nf Inductive Turn-on Delay Time t d(on) — — 950 ns Load Rise Time tr V CC = 1000V, IC = 300A, — — 300 ns Switch Turn-off Delay Time t d(off) V GE1 = VGE2 = 15V, RG = 1 .6Ω, — — 1000 ns Time Fall Time tf Inductive Load — — 350 ns Diode Reverse Recovery Time trr*1 Switching Operation, — — 450 ns Diode Reverse Recovery Charge Qrr*1 I E = 300A — 30 — µC *1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *2 Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(max) rating. *3 Pulse width and repetition rate should be such as to cause negligible temperature rise. *4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.

Dual IGBTMOD™ A-Series Module 301/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT*4 — — 0.043 °C/W Thermal Resistance, Junction to Case R th(j-c)D Per FWDi*4 — — 0.072 °C/W Contact Thermal Resistance Rth(c-f) Thermal Grease Applied* 4,*5 — — — °C/W External Gate Resistance RG 1 .6 — 16 Ω *4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips. *5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 102 101 100 10-1 10101 324 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 25°C COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 600 500 400 300 200 100 VGE = 10V Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres IC = 600A IC = 300A IC = 120A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0246 81 0 04 81 21 62 0 0481 21 62 0 100 VGE = 20V Tj = 25oC 200 300 400 500 600 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 600400 VCE = 15V Tj = 25°C Tj = 125°C 200 10-1 Tj = 25°C Tj = 125°C

Dual IGBTMOD™ A-Series Module 4 01/10 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.043°C/W (IGBT) Rth(j-c) = 0.072°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 1000 30002000 VCC = 1000V EMITTER CURRENT, IC, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 102 101 REVERSE RECOVERY CURRENT, Irr, (AMPERES) VCC = 1000V VGE = 15V RG = 1.6Ω Tj = 25°C Inductive Load VCC = 800V IC = 300A 103 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE) 103 101 102 101 102 100 VCC = 1000V VGE = 15V RG = 1.6Ω Tj = 125°C Inductive Load VCC = 1000V VGE = 15V IC = 300A Tj = 125°C Inductive Load 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, Eon, Eoff, Err, (mJ/PULSE) 103 100 101 102 101 102 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) Irr trr COLLECTOR CURRENT, IC, (AMPERES) 104 103 101 102 102 101 SWITCHING TIME, td(on), tr, td(off), tf, (ns) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) td(off) td(on) tr VCC = 1000V VGE = 15V RG = 1.6Ω Tj = 125°C Inductive Loadtf 103 GATE RESISTANCE, RG, (Ω) 104 100 101 103 102 101 SWITCHING TIME, td(on), tr, td(off), tf, (ns) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) td(off) td(on) Eon Eoff Eon Eoff Err tr VCC = 1000V VGE = 15V IC = 300A Tj = 125°C Inductive Load tf 102 Err