CM300DY-24NFH

CM300DY-24NFH POWEREX | Alldatasheet

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Dual IGBTMOD™ NFH-Series Module

300 Amperes/1200 Volts

11Rev. 01/06 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assem- bly and thermal management. Features: £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DY -24NFH is a 1200V (VCES), 300 Ampere Dual IGBTMOD™ Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 300 24 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 108.0 B 2.44 62.0 F 0.98 25.0 G 0.24 6.0 H 0.59 15.0 K 0.55 14.0 L 0.26 Dia. Dia. 6.5 M M6 Metric M6 Dimensions Inches Millimeters N 1.18 30.0 P 0.71 18.0 Q 0.28 7.0 R 0.87 22.2 S 0.33 8.5 T 0.02 0.5 U 0.110 2.8 V 0.16 4.0 W 0.85 21.5 X 0.94 24.0 A XW FF B N L (4 PLACES) D M NUTS (3 PLACES) G G H KKK P P P T THICK U WIDTHQQ VC S R C1E2C2E1 TC MEASURED POINT (BASEPLATE) LABEL C2E1 E2 C1 E

Dual IGBTMOD™ NFH-Series Module 22 Rev. 01/06 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM300DY-24NF Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (TC = 25°C) IC 300* Amperes Peak Collector Current ICM 600* Amperes Emitter Current** (TC = 25°C) IE 300* Amperes Peak Emitter Current** IEM 600* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1130 Watts Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 1900 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb Weight — 400 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 1.0 µA Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 300A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts I C = 300A, VGE = 15V, Tj = 125°C — 5.0 — Volts Total Gate Charge QG V CC = 600V, IC = 300A, VGE = 15V — 1360 — nC Emitter-Collector Voltage VEC IE = 300A, VGE = 0V — — 3.5 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies — — 47 nf Output Capacitance Coes VCE = 10V, VGE = 0V — — 4.0 nf Reverse Transfer Capacitance Cres — — 0.9 nf Inductive Turn-on Delay Time t d(on) — — 300 ns Load Rise Time tr VCC = 600V, IC = 300A, — — 80 ns Switch Turn-off Delay Time t d(off) V GE1 = VGE2 = 15V, RG = 1.0Ω, — — 500 ns Time Fall Time tf Inductive Load Switching Operation, — — 150 ns Diode Reverse Recovery Time trr IE = 300A — — 250 ns Diode Reverse Recovery Charge** Qrr — 13 — µC * Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Dual IGBTMOD™ NFH-Series Module 33Rev. 01/06 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT 1/2 Module, T C Reference — — 0.11 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)D Per FWDi 1/2 Module, T C Reference — — 0.18 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)'Q Per IGBT 1/2 Module, — — 0.066 °C/W T C Reference Point Under Chips Thermal Resistance, Junction to Case R th(j-c)'D Per FWDi 1/2 Module, — — 0.1 °C/W T C Reference Point Under Chips Contact Thermal Resistance Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W External Gate Resistance RG 1.0 — 10 Ω COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 102 101 100 10-1 1010 1 3 42 5 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 8 10 1412 16 18 20 Tj = 25°C GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 600 500 400 300 0 5 15 200 100 VGE = 10V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres IC = 600A IC = 300A IC = 120A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 2 4 6 8 1 0 100 VGE = 20V Tj = 25oC 200 300 600 400 500 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 100 300 600400 500 VGE = 15V Tj = 25°C Tj = 125°C 200 10-1

Dual IGBTMOD™ NFH-Series Module 44 Rev. 01/06 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Err TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.11C/W (IGBT) Rth(j-c) = 0.18C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 400 800 1200 20001600 VCC = 600V VCC = 400V IC = 300A COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 100 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = 15V RG = 1.0Ω Tj = 125C Inductive Load tf 103 EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 102 101 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 VCC = 600V VGE = 15V RG = 1.0Ω Tj = 25C Inductive Load Irr trr COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 101 102 101 100 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 102 100 101 101 100 102 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 101 102 101 100 103 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) VCC = 600V VGE = ±15V IC = 300A Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load C Snubber at Bus