CM300DX-34SA

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300 Amperes/1700 Volts

112/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Lo w Drive Power £ Lo w V CE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode Isolat ed Baseplate for Easy Heat Sinking Applications: A C Motor Control £ Motion/Ser vo Control £ Phot ovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM300DX-34SA is a 1700V CES), 300 Ampere Dual IGBT Power Module. Type Current Rating VCES Amperes V olts (x 50) CM 300 34 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters AB 0.22 Dia. 5.5 Dia. AD 2.26 57 .5 AE 0.15 3.75 AF M6 M6 AG 0.28 7 .0 AH 0.14 3.5 AJ 0.03 0.8 AK 0.81 20.5 AL 0.70 17 .0 AM 0.12 3.0 AN 0.65 16.5 AP 0.49 12.5 AQ 0.18 4.5 AR 0.102 Dia. 2.6 Dia. AS 0.089 Dia. 2.25 Dia. AT 0.05 1 AU 0.03 0.65 AV 0.05 1 .15 AW 0.54 13.7 AX 0.52 13.0 AY 0.285 7 .25 G2(8) Tr2 Tr1 Di2 Di1 Es2(9) (10) (11) C2E1 (7) C2E1 (6) Th TH1 (1) TH2 (2) G1(3) Cs1(5) Es1(4) NTC A D E FJ AR Z AA AY B AH AJ Y AL AM AM AK AG AE AD AC AS AN AQ AQ AG AT K AW AX AW AE 45° AU AV AP G L H P C X T S R R Q N V U W AB (4 PLACES) AF (4 PLACES) M K Y Y Y DETAIL "B" DETAIL "B"DETAIL "C" DETAIL "A" DETAIL "C" DETAIL "A"1 2 3 4 5 8 9 Tolerance Otherwise Specified (mm) The tolerance of size between terminals is assumed to ±0.4 Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1. 2 Dimensions Inches Millimeters A 5.98 152.0 B 2.44 62.0 D 5.39 137 .0 E 4.79 121 .7 G 3.72 94.5 H 0.60 15.14 J 0.53 13.5 K 0.31 7 .75 M 2.28 ±0.012 57 .95±0.3 N 1 .54 39.0 P 0.87 22.0 R 0.55 14.0 S 0.47 12.0 T 0.24 6.0 U 0.31 8.0 V 0.26 6.5 W 0.62 15.64 Y 0.15 3.81 Z 1 .95 ±0.012 49.53±0.3

Dual IGBT NX-Series Module 2 12/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1700 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, TC = 125°C)*2,*4 I C 300 Amperes Collector Current (Pulse, Repetitive)*3 I CRM 600 Amperes Total Power Dissipation (TC = 25°C)*2,*4 Ptot 3000 Watts Emitter Current (TC = 25°C)*2,*4 IE*1 300 Amperes Emitter Current (Pulse, Repetitive)*3 IERM*1 600 Amperes Maximum Junction Temperature Tj(max) 175 °C Maximum Case Temperature*2 T C(max) 125 °C Operating Junction Temperature Tj(op) -40 to +150 °C Storage Temperature Tstg -40 to +125 °C Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO 4000 Volts *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. 21 .2 Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. Th 27 .8 37 .7 41 .9 78.8 92.7 Tr2 23.0 32.4 35.4 46.4 Di2 Tr2Di2 Tr1 Tr1 Di1Di1 LABEL SIDE

Dual IGBT NX-Series Module 312/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 mA Gate-Emitter Leakage Current IGES V GE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) I C = 30mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) I C = 300A, VGE = 15V, Tj = 25°C*6 — 2.0 2.5 Volts Terminal) I C = 300A, VGE = 15V, Tj = 125°C*6 — 2.2 — Volts I C = 300A, VGE = 15V, Tj = 150°C*6 — 2.25 — Volts Collector-Emitter Saturation Voltage VCE(sat) I C = 300A, VGE = 15V, Tj = 25°C*6 — 1 .9 2.4 Volts (Chip) I C = 300A, VGE = 15V, Tj = 125°C*6 — 2.1 — Volts I C = 300A, VGE = 15V, Tj = 150°C*6 — 2.15 — Volts Input Capacitance Cies — — 52 nF Output Capacitance Coes V CE = 10V, VGE = 0V — — 2.2 nF Reverse Transfer Capacitance Cres — — 0.52 nF Gate Charge QG V CC = 1000V, IC = 300A, VGE = 15V — 1656 — nC Turn-on Delay Time td(on) — — 400 ns Rise Time tr V CC = 1000V, IC = 300A, VGE = ±15V, — — 100 ns Turn-off Delay Time td(off) R G = 0Ω, Inductive Load — — 700 ns Fall Time tf — — 600 ns Emitter-Collector Voltage VEC*1 I E = 300A, VGE = 0V, Tj = 25°C*6 — 4.1 5.3 Volts (Terminal) I E = 300A, VGE = 0V, Tj = 125°C*6 — 2.9 — Volts I E = 300A, VGE = 0V, Tj = 150°C*6 — 2.7 — Volts Emitter-Collector Voltage VEC*1 I E = 300A, VGE = 0V, Tj = 25°C*6 — 4.0 5.2 Volts (Chip) I E = 300A, VGE = 0V, Tj = 125°C*6 — 2.8 — Volts I E = 300A, VGE = 0V, Tj = 150°C*6 — 2.6 — Volts Reverse Recovery Time trr*1 V CC = 1000V, IE = 300A, VGE = ±15V — — 300 ns Reverse Recovery Charge Qrr*1 R G = 0Ω, Inductive Load — 14.0 — µC Turn-on Switching Energy per Pulse Eon V CC = 1000V, IC = IE = 300A, — 38 — mJ Turn-off Switching Energy per Pulse Eoff V GE = ±15V, RG = 0Ω, — 80 — mJ Reverse Recovery Energy per Pulse Err*1 T j = 150°C, Inductive Load — 69 — mJ Internal Lead Resistance RCC' + EE' Main Terminals-Chip, — — 2.0 mΩ Per Switch,TC = 25°C*2 Internal Gate Resistance rg Per Switch — 1 .7 — Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Pulse width and repetition rate should be such as to cause negligible temperature rise. 21 .2 Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. Th 27 .8 37 .7 41 .9 78.8 92.7 Tr2 23.0 32.4 35.4 46.4 Di2 Tr2Di2 Tr1 Tr1 Di1Di1 LABEL SIDE

Dual IGBT NX-Series Module 4 12/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Test Conditions Min. Typ. Max. Units Zero Power Resistance R25 T C = 25°C*2 4.85 5.00 5.15 kΩ Deviation of Resistance ∆R/R T C = 100°C, R100 = 493Ω -7 .3 — +7 .8 % B Constant B(25/50) Approximate by Equation*7 — 3375 — K Power Dissipation P25 T C = 25°C*2 — — 10 mW Thermal Resistance Characteristics Thermal Resistance, Junction to Case*2 R th(j-c)Q Per Inverter IGBT — — 0.05 K/W Thermal Resistance, Junction to Case*2 R th(j-c)D Per Inverter FWDi — — 0.08 K/W Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied — 15 — K/kW Case to Heatsink*2 (Per 1 Module)*8 Mechanical Characteristics Mounting Torque Mt Mounting to Heatsink, M6 Screw 31 35 40 in-lb M s Mounting to Heatsink, M5 Screw 22 27 31 in-lb Creepage Distance ds Terminal to Terminal 17 .0 — — mm Terminal to Baseplate 16.8 — — mm Clearance d a Terminal to Terminal 10.0 — — mm Terminal to Baseplate 10.0 — — mm Weight m — 350 — Grams Flatness of Baseplate ec On Centerline X, Y*5 ±0 — +1 00 µm Recommended Operating Conditons, Ta = 25°C (DC) Supply Voltage VCC Applied Across C1-E2 — 1000 1200 Volts Gate (-Emitter Drive) Voltage VGE(on) Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts External Gate Resistance RG Per Switch 0 — 27 Ω *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. *7 B(25/50) = In( R25)/( ) R50 T25 T50 R 25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R 50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] *8 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. 21 .2 Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. Th 27 .8 37 .7 41 .9 78.8 92.7 Tr2 23.0 32.4 35.4 46.4 Di2 Tr2Di2 Tr1 Tr1 Di1Di1 LABEL SIDE – : CONCAVE + : CONVEX – : CONCAVE X Y + : CONVEX MOUNTING SIDE MOUNTING SIDE MOUNTING SIDE

Dual IGBT NX-Series Module 512/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 0 2 1 53 4 6 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CHIP - TYPICAL) 102 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) 6 8 10 1412 16 18 20 Tj = 25°C IC = 600A IC = 300A IC = 180A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (CHIP - TYPICAL) 0 2 4 6 8 10 VGE = 20V Tj = 25°C 600 200 400 100 300 500 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) 4.5 3.5 2.5 3.0 4.0 2.0 1.5 0.5 1.0 600200 400100 300 500 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C

Dual IGBT NX-Series Module 6 12/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 103 102 101 10-1 100 101 VGE = 0V Cies Coes Cres 10-1 COLLECTOR CURRENT, IC, (AMPERES) 104 103 101 102 102 100 101 104 103 102 100 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 1000V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load tf 103 COLLECTOR CURRENT, IC, (AMPERES) 101 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 1000V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load tf 103 EXTERNAL GATE RESISTANCE, RG, (Ω) 104 103 10110-1 101 102 SWITCHING TIME, (ns) SWITCHING TIME, (ns) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) VCC = 1000V VGE = ±15V IC = 300A Tj = 125°C Inductive Load 102100 td(off) td(on) tr tf

Dual IGBT NX-Series Module 712/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 104 103 101 102 VCC = 1000V VGE = ±15V IC = 300A Tj = 150°C Inductive Load EXTERNAL GATE RESISTANCE, RG, (Ω) 10110-1 100 SWITCHING TIME, (ns) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 102 td(off) td(on) tr tf GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 500 1000 1500 25002000 IC = 300A VCC = 1000V EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 VCC = 1000V VGE = ±15V RG = 0/uni03A9 Tj = 125°C Inductive Load Irr trr REVERSE RECOVERY, Irr (A), trr (ns) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 VCC = 1000V VGE = ±15V RG = 0/uni03A9 Tj = 150°C Inductive Load Irr trr REVERSE RECOVERY, Irr (A), trr (ns)

Dual IGBT NX-Series Module 8 12/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com GATE RESISTANCE, RG, (/uni03A9) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 10-1 100 101 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 1000V VGE = ±15V RG = 0/uni03A9 Tj = 150°C VCC = 1000V VGE = ±15V IC = 300A Tj = 125°C COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) SWITCHING ENERGY, Eon, Eoff, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 103 102 101 100 103 102 101 100 103 102 101 100 103 102 101 100 102 101 10-1 100 102 101 10-1 100 REVERSE RECIVERY ENERGY, Err, (mJ) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 101 102 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Eon Eoff Err Eon Eoff Err VCC = 1000V VGE = ±15V RG = 0/uni03A9 Tj = 125°C Eon Eoff Err GATE RESISTANCE, RG, (/uni03A9) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 10-1 100 101 102 VCC = 1000V VGE = ±15V IC = 300A Tj = 150°C Eon Eoff Err 101 102 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)

Dual IGBT NX-Series Module 912/12 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = R th(j-c) =

0.05 K/W

(IGBT) R th(j-c) =

0.08 K/W

(FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')