CM300DU-34KA

CM300DU-34KA POWEREX | Alldatasheet

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Dual IGBTMOD™ KA-Series Module

300 Amperes/1700 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dimensions Inches Millimeters A 5.51 140.0 B 5.12 130.0 C 5.12 130.0 D 1.38 35.0 E 4.33 110.0 F 4.33 110.0 G 0.39 10.0 H 0.45 11.5 J 0.54 13.8 K 1.72 43.8 L 1.42 36.0 M 0.39 10.0 N 0.80 20.4 Dimensions Inches Millimeters P 0.57 14.5 Q 1.57 40.0 R 2.56 65.0 SM 8 M 8 T 0.26 Dia. 6.5 Dia. S 0.32 8.0 V 0.97 24.5 WM 4 M 4 X 0.59 15.0 Y 0.35 9.0 Z 1.02 26.0 AA 0.79 20.0 Description: Pow erex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low V CE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ W elding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM300DU-34KA is a 1700V (V CES ), 300 Ampere Dual IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 300 34 T - (4 TYP.) C2E1 CL LC W - (4 PLACES) LABEL A F G HJKL M N P Q P R U V D X Y Z AA TC MEASURED POINTB C E S - (3 PLACES) Outline Drawing and Circuit Diagram

Dual IGBTMOD™ KA-Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM300DU-34KA Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1700 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 300 Amperes Peak Collector Current I CM 600* Amperes Emitter Current (Tc = 25°C) I E 300 Amperes Peak Emitter Current I EM 600* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P c 1500 Watts Mounting Torque, M8 Main Terminal – 95 in-lb Mounting Torque, M6 Mounting – 40 in-lb G(E) Terminal, M4 – 15 in-lb W eight – 1200 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 3500 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 1 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 30mA, VCE = 10V 4.0 5.5 7.0 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 300A, VGE = 15V, Tj = 25°C– 3.2 4.0 Volts IC = 300A, VGE = 15V, Tj = 125°C– 3.8 – Volts Total Gate Charge Q G VCC = 1000V, IC = 300A, VGE = 15V – 1350 – nC Emitter-Collector Voltage V EC IE = 300A, VGE = 0V, Tj = 25°C– – 4.6 Volts IE = 300A, VGE = 0V, Tj = 125°C– 2.2 – Volts Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 42.0 nf Output Capacitance C oes VCE = 10V, VGE = 0V – – 7.2 nf Reverse Transfer Capacitance C res –– 2.3 nf Resistive Turn-on Delay Time t d(on) VCC = 1000V, IC = 300A, – – 800 ns Load Rise Time t r VGE1 = VGE2 = 15V, – – 300 ns Switch Turn-off Delay Time t d(off) R G = 3.1/H9024, Resistive – – 1000 ns Times Fall Time t f Inductive Load – – 800 ns Diode Reverse Recovery Time t rr Switching Operation – – 600 ns Diode Reverse Recovery Charge Q rr IE = 300A – 11.2 – µC Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Dual IGBTMOD™ KA-Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)QP er IGBT 1/2 Module – – 0.083 °C/W Thermal Resistance, Junction to Case R th(j-c)DP er FWDi 1/2 Module – – 0.13 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.010 – °C/W Thermal Resistance R th(j-c')QT c Measured Point – – 0.035* °C/W (Under Chips - IGBT Part) * If you use this value, Rth(f-a) should be measured just under the chips. COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02468 1 0 200 VGE = 20V 15 14 Tj = 25oC 100 300 500 600 400 10 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 300 500 200 100 600 400 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 100 200 300 500 VGE = 15V Tj = 25°C Tj = 125°C 400 600 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 048 1 2 1 6 2 0 Tj = 25°C IC = 120A IC = 600A IC = 300A COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 101 100 102 10-1 VGE = 0V f = 1MHz 101 C ies C oes C res 101 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C 1234 5 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS)

Dual IGBTMOD™ KA-Series Module Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.083°C/W Zth = Rth  (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse T C = 25°C Per Unit Base = Rth(j-c) = 0.13°C/W Zth = Rth  (NORMALIZED VALUE) 10-1 10-2 10-3 GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 400 800 1200 1600 2000 VCC = 1000V VCC = 800V IC = 300A COLLECTOR CURRENT, I C , (AMPERES) 104 101 102 103 103 102 101 tr SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(on) td(off) VCC = 1000V VGE = ±15V R G = 3.1 Ω Tj = 125°C Inductive Load tf REVERSE RECOVERY CURRENT, I rr, (AMPERES) EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) 103 101 102 103 102 101 trr Irr 103 102 101 VCC = 1000V VGE = ±15V R G = 3.1 Ω Tj = 25°C Inductive Load REVERSE RECOVERY CHARACTERISTICS (TYPICAL)