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Dual IGBTMOD™ NFH-Series Module

300 Amperes/600 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 7/11 Rev. 1 1 Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low VCE(sat) £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DU-12NFH is a 600V (VCES), 300 Ampere Dual IGBTMOD™ Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 300 12 Outline Drawing and Circuit Diagram A W FTF N AA J G Q Q G HEB L (4 PLACES) D M (3 PLACES) KKK PP P QQ V Z Y X V SS U C S R C2E1 E2 C1 LABEL C2E1 E2 C1 Dimensions Inches Millimeters A 4.25 108.0 B 2.44 62.0 F 0.98 25.0 G 0.24 6.0 H 0.59 15.0 J 0.7854 19.95 K 0.55 14.0 L 0.26 Dia. 6.5 Dia. M M6 Metric M6 N 1 .022 25.95 Dimensions Inches Millimeters P 0.71 18.0 Q 0.28 7 .0 R 0.874 22.2 S 0.30 7 .5 T 0.94 24.0 U 0.11 2.8 V 0.16 4.0 W 0.33 8.5 X 0.46 11 .75 Y 0.012 ~ 0 0.3 ~ 0 Z 0.85 21 .5 AA 0.69 17 .5

Dual IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 7/11 Rev. 12 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM300DU-12NF Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 6 00 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (TC = 25°C) IC 300* Amperes Peak Collector Current ICM 600* Amperes Emitter Current** (TC = 25°C) IE 300* Amperes Peak Emitter Current** IEM 600* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 780 Watts Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 1250 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb Weight — 400 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate Leakage Current IGES V GE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) I C = 30mA, VCE = 10V 5.0 6.0 7 .0 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 300A, VGE = 15V, Tj = 25°C — 2.0 2.7 Volts I C = 300A, VGE = 15V, Tj = 125°C — 1 .95 — Volts Total Gate Charge QG V CC = 300V, IC = 300A, VGE = 15V — 1860 — nC Emitter-Collector Voltage VEC I E = 300A, VGE = 0V — — 2.6 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies — — 83 nf Output Capacitance Coes V CE = 10V, VGE = 0V — — 5.4 nf Reverse Transfer Capacitance Cres — — 3.0 nf Inductive Turn-on Delay Time t d(on) — — 350 ns Load Rise Time tr V CC = 300V, IC = 300A, — — 150 ns Switch Turn-off Delay Time t d(off) V GE1 = VGE2 = 15V, RG = 4.2Ω, — — 700 ns Time Fall Time tf Inductive Load Switching Operation, — — 150 ns Diode Reverse Recovery Time trr I E = 300A — — 200 ns Diode Reverse Recovery Charge** Qrr — 5.5 — µC * Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DU-12NFH Dual IGBTMOD™ NFH-Series Module 7/11 Rev. 1 3 Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT 1/2 Module, T C Reference — — 0.16 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)D Per FWDi 1/2 Module, T C Reference — — 0.24 °C/W Point per Outline Drawing Thermal Resistance, Junction to Case R th(j-c)'Q Per IGBT 1/2 Module, — — 0.10 °C/W T C Reference Point Under Chips Contact Thermal Resistance Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W External Gate Resistance RG 2.1 — 21 Ω COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 102 101 100 10-1 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 8 10 1412 16 18 20 Tj = 25°C Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres IC = 600A IC = 300A IC = 120A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 1 2 3 4 5 100 VGE = 20V 8.5 9.5 7.5 Tj = 25°C 200 300 600 400 500 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3.0 2.0 1.5 1.0 0 100 300 2.5 0.5 600400 500 VGE = 15V Tj = 25°C Tj = 125°C 200 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 101 103 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr tf VCC = 300V VGE = 15V RG = 4.2Ω Tj = 125°C Inductive Load SWITCHING TIME, (ns)

Dual IGBTMOD™ NFH-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 7/11 Rev. 14 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, ESW( on) , ESW( off) , (mJ/PULSE) 101 101 102 100 10-1 VCC = 300V VGE = 15V RG = 4.2Ω Tj = 125°C Inductive Load C Snubber at Bus 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) ESW(on) ESW(off) GATE RESISTANCE, RG, () SWITCHING LOSS, ESW( on) , ESW( off) , (mJ/PULSE) 102 100 101 101 100 VCC = 300V VGE = 15V IC = 300A Tj = 125°C Inductive Load C Snubber at Bus 102 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) ESW(on) ESW(off) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 101 101 102 100 10-1 VCC = 300V VGE = 15V RG = 4.2Ω Tj = 125°C Inductive Load C Snubber at Bus 103 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) Err EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 102 101 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 VCC = 300V VGE = 15V RG = 4.2Ω Tj = 25°C Inductive Load Irr trr GATE RESISTANCE, RG, () REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 101 100 101 100 10-1 VCC = 300V VGE = 15V IE = 300A Tj = 125°C Inductive Load C Snubber at Bus 102 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) Err TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse T C = 25C Per Unit Base = R th(j-c) = 0.16°C/W (IGBT) R th(j-c) = 0.24°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 500 1000 1500 2000 2500 VCC = 300V VCC = 200V IC = 300A