CM300DC-24NFM

CM300DC-24NFM POWEREX | Alldatasheet

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300 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Outline Drawing and Circuit Diagram Description: Powerex NFM IGBT Modules are designed for use in hard switching (15-30kHz) applica- tions. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super- fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management Features: £ Low Drive Power £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ UPS £ Battery Powered Supplies £ Induction Heating Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DC-24NFM is a 1200V (VCES), 300 Ampere Dual IGBT Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 300 24 A F XF Y YY B W J K N L (4 PLACES) D M (3 PLACES) V - TAB (4 PLACES) G G H Z Z Z Z AA AB P AA T Q Q UC S R E C2E1 E2 C1 C2E1 Dim. Inches Millimeters A 4.25 108.0 B 2.44 62.0 F 1.10 28.0 G 0.23 6.0 H 0.67 17.0 J 0.79 20.0 K 0.39 10.0 L 0.26 Dia. 6.5 Dia. M M6 M6 N 1.38 35.0 Dim. Inches Millimeters P 3.15 80.0 Q 0.11 3.0 R 0.91 23.2 S 0.31 8.0 T 1.93 49.0 U 0.14 3.5 V #110 Tab W 1.18 30.0 X 0.62 18.5 Y 0.47 12.0 Z 0.02 0.5 AA 0.88 22.5 AB 0.98 25.0

Dual IGBT NFM-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM300DC-24NFM Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current IC 300 Amperes Peak Collector Current ICM 600* Amperes Emitter Current IE 300 Amperes Peak Emitter Current IEM 600* Amperes Maximum Collector Dissipation* (TC = 25°C) PC 1890 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb Weight — 375 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage* VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C — 3.0 4.5 Volts IC = 300A, VGE = 15V, Tj = 125°C — 3.0 — Volts Total Gate Charge QG VCC = 600V, IC = 300A, VGE = 15V — 1360 — nC Emitter-Collector Voltage VEC IE = 300A, VGE = 0V — 2.3 3.3 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies — — 47 nF Output Capacitance Coes VCE = 10V, VGE = 0V — — 4.0 nF Reverse Transfer Capacitance Cres — — 0.9 nF Inductive Turn-on Delay Time td(on) — — 300 ns Load Rise Time tr VCC = 600V, IC = 300A, — — 80 ns Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 1.0Ω, — — 500 ns Time Fall Time tf Inductive Load — 60 200 ns Diode Reverse Recovery Time trr Switching Operation, — 110 180 ns Diode Reverse Recovery Charge Qrr IE = 300A — 14 — µC *Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(max) rating. Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *Junction temperature (Tj) should not increase beyond 150°C. **TC , Tf measured point is just under the chips. ***Pulse width and repetition rate should be such as to cause neglible temperature rise.

Dual IGBT NFM-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 102 101 100 10-1 1010 1 32 100 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 8 10 1412 16 18 20 Tj = 25°C COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 100 400 500 600 VGE = 15V Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres IC = 600A IC = 300A IC = 120A COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) OUTPUT CHARACTERISTICS (TYPICAL) 20 4 6 8 10 100 VGE = 20V Tj = 25°C 300 200 500 400 600 300200 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 101 102 102 100 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load tf 103 Tj = 25°C Tj = 125°C VGE = 0V Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, — — 0.066 °C/W TC Measured Point Just Under Chips* Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, — — 0.14 °C/W TC Measured Point Just Under Chips* Contact Thermal Resistance, Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.02 — °C/W Case to Fin External Gate Resistance RG 1.0 — 10 Ω *If using this value, Rth(f-a) should be measured just under the chips.

Dual IGBT NFM-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Under the Chip Per Unit Base = Rth(j-c) = 0.066°C/W (IGBT) Rth(j-c) = 0.14°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 400 8 00 20001200 1600 VCC = 600V EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 102 101 103 102 101 REVERSE RECOVERY CURRENT, Irr, (AMPERES) VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load VCC = 400V IC = 300A 103 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, E(on), E(off), (mJ/PULSE) 102 101 102 101 100 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load VCC = 600V VGE = ±15V IC = 300A Tj = 125°C Inductive Load 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 102 100 101 101 100 102 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) Eon Eoff COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, Err, (mJ/PULSE) 102 101 102 101 100 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load 103 REVERSE RECOVERY SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) Eon Eoff VCC = 600V VGE = ±15V IC = 300A Tj = 125°C Inductive Load GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, Err, (mJ/PULSE) 102 100 101 101 100 102 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) Irr trr