CM2500DY-24S | DigiCamel IC Datasheet

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Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking £ NTC Thermistor Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Wind £ UPS Inverter Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM1800DY -34S is a 1700V (VCES),

1800 Ampere Dual Half-Bridge

IGBTMOD™ HVIGBT Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 2500 24 Outline Drawing and Circuit Diagram C1 C1 E2 (Es2) E1 (Es1)G1 Tr2 Tr1 Di2Di1 C2 (Cs2) C1 (Cs1) E2 E2 C2E1 C2E1 TH1 TH2 NTC Tolerance Otherwise Specified (mm) The tolerance of size between terminals is assumed to ±0.4 Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1. 2 E2 E2 C1 C1 E2 G2 C2 G1 E1 C1 C2E1 C2E1 H (12 PLACES)A G G G G G B X Y AD AC (SCREWING DEPTH) Z (SCREWING DEPTH) AB AA H U T P S L L K N NN M (8 PLACES) L K P Q R L D E F F J (18 PLACES) K AG AJ AM AL AKAH AF AF AF AE F F FAFAF AF C F V WF Dimensions Inches Millimeters A 12.2 310.0 B 5.6 142.5 C 4.96 126.0 D 1 .89 48.0 E 1 .85 46.9 F 0.28 7. 0 G 2.28 58.0 J M6 M6 K 1 .65 42.0 L 0.91 23.0 M M4 M4 N 0.35 9.0 P 0.47 11 .9 Q 0.21 5.4 R 0.33 8.5 S 4.92 125.0 T 0.6 15.0 Dimensions Inches Millimeters U 0.83 21 .0 V 1 .5 38.0 W 2.04 51 .9 Y 1 .55 39.4 Z 0.63 16.0 AA 0.24 6.2 AB 0.16 4.0 AC 0.45 11 .5 AE 0.32 8.2 AF 0.55 14.0 AG 2.05 52.0 AH 0.59 15.0 AJ 7 .01 178.0 AK 3.98 101 .0 AL 1 .63 41 .5 AM 1 .54 39.0 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual Half-Bridge IGBTMOD™ HVIGBT Series Module

2500 Amperes/1200 Volts

15/12 Rev. 1

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, TC = 83°C)*2,*4 I C 2500 Amperes Collector Current (Pulse, Repetitive)*3 I CRM 5000 Amperes Total Maximum Power Dissipation (TC = 25°C)*2,*4 P tot 11535 Watts Emitter Current, Free Wheeling Diode Forward Current (TC = 25°C)*2 IE*1 2500 Amperes Emitter Current, Free Wheeling Diode Forward Current (Pulse, repetitive)*3 IERM*1 5000 Amperes Module Characteristics Symbol Rating Units Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) VISO 4000 V Maximum Junction Temperature Tj(max) 175 °C Maximum Case Temperature*4 T C(max) 125 °C Operating Junction Temperature Tj(opr) -40 to +150 °C Storage Temperature Tstg -40 to +125 °C *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. LABEL SIDE Each mark points to the center position of each chip. Tr1 / Tr2: IGBT Di1 / Di2: FWDi Th: NTC Thermistor Di2 Tr2 Di2 Tr2 Di2 Tr2 Di2 Tr2 Di2 Tr2 Di2 Tr2 Di2 Tr2 Di2 Tr2 Di2 Tr2 Di2 Tr2 Tr1 Di1 Tr1 Di1 Tr1 Di1 Tr1 Di1 Tr1 Di1 Tr1 Di1 Tr1 Di1 Tr1 Di1 Tr1 Di1 Tr1 Di1 Th 24.5 40.7 54.2 82.7 96.2 87 .7 101. 2 59.2 45.7 284.2 256.0 226.2 198.0 168.2 140.0 110.2 82.0 52.2 24.0 286.0 257 .7 228.0 199.7 170.0 141 .7 112.0 83.7 54.0 46.5 25.7 CM2500DY-24S Dual Half-Bridge IGBTMOD™ HVIGBT Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 5/12 Rev. 1

Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 mA Gate-Emitter Leakage Current IGES V GE = VGES, VCE = 0V — — 5.0 µA Gate-Emitter Threshold Voltage VGE(th) I C = 45mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 2500A, VGE = 15V, Tj = 25°C*5 — 1 .80 2.25 Volts (Terminal) I C = 2500A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts IC = 2500A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 2500A, VGE = 15V, Tj = 25°C*5 — 1 .70 2.15 Volts (Chip) I C = 2500A, VGE = 15V, Tj = 125°C*5 — 1 .90 — Volts IC = 2500A, VGE = 15V, Tj = 150°C*5 — 1 .95 — Volts Input Capacitance Cies — — 250 nF Output Capacitance Coes V CE = 10V, VGE = 0V — — 50 nF Reverse Transfer Capacitance Cres — — 4.2 nF Gate Charge QG V CC = 600V, IC = 2500A, VGE = 15V — 5800 — nC Turn-on Delay Time td(on) — — 800 ns Rise Time tr V CC = 600V, IC = 2500A, VGE = ±15V, — — 200 ns Turn-off Delay Time td(off) R G = 0Ω, Inductive Load — — 700 ns Fall Time tf — — 300 ns Emitter-Collector Voltage VEC*1 I E = 2500A, VGE = 0V, Tj = 25°C*5 — 1 .80 2.25 Volts (Terminal) I E = 2500A, VGE = 0V, Tj = 125°C*5 — 1 .80 — Volts I E = 2500A, VGE = 0V, Tj = 150°C*5 — 1 .80 — Volts Emitter-Collector Voltage VEC*1 I E = 2500A, VGE = 0V, Tj = 25°C*5 — 1 .70 2.15 Volts (Chip) I E = 2500A, VGE = 0V, Tj = 125°C*5 — 1 .70 — Volts I E = 2500A, VGE = 0V, Tj = 150°C*5 — 1 .70 — Volts Reverse Recovery Time trr*1 V CC = 600V, IE = 2500A, VGE = ±15V — — 300 ns Reverse Recovery Charge Qrr*1 R G = 0Ω, Inductive Load — 70 — µC Turn-on Switching Energy per Pulse Eon V CC = 600V, IC = IE = 2500A, — (TBD) — mJ Turn-off Switching Energy per Pulse Eoff V GE = ±15V, RG = 0Ω, — (TBD) — mJ Reverse Recovery Energy per Pulse Err*1 T j = 150°C, Inductive Load — (TBD) — mJ Internal Lead Resistance RCC' + EE' Main Terminals-Chip, — 0.11 — mΩ Per Switch,TC = 25°C*4 Internal Gate Resistance rg Per Switch — 1 .1 — Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 Case temperature (TC) and heatsink temperature (Ts) are measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure on page 1 for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. CM2500DY-24S Dual Half-Bridge IGBTMOD™ HVIGBT Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 35/12 Rev. 1

Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Test Conditions Min. Typ. Max. Units Zero Power Resistance R25 T C = 25°C*4 4.85 5.00 5.15 kΩ Deviation of Resistance ∆R/R T C = 100°C, R100 = 493Ω*4 -7 .3 — +7 .8 % B Constant B(25/50) Approximate by Equation *6 — 3375 — K Power Dissipation P25 T C = 25°C*4 — — 10 mW Thermal Resistance Characteristics Thermal Resistance, Junction to Case*4 R th(j-c)Q Per IGBT — — 13 K/kW Thermal Resistance, Junction to Case*4 R th(j-c)D Per FWDi — — 22 K/kW Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied — 3.1 — K/kW Case to Heatsink*4 (Per 1/2 Module)*7 Mechanical Characteristics Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb Auxiliary Terminals, M4 Screw 12 13 15 in-lb M s Mounting, M5 Screw 22 27 31 in-lb Creepage Distance ds Terminal to Terminal 16 — — mm Terminal to Baseplate 25 — — mm Clearance da Terminal to Terminal 16 — — mm Terminal to Baseplate 24 — — mm Weight m — 2000 — Grams Flatness of Baseplate ec On Centerline X, Y*8 -50 — + 100 µm Recommended Operating Conditons, Ta = 25°C DC Supply Voltage VCC Applied Across P-N Terminals — 600 850 Volts Gate-Emitter Drive Voltage VGE(on) Applied Across G-E Terminals 13.5 15.0 16.5 Volts External Gate Resistance RG Per Switch 0 — 2 Ω *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 B(25/50) = In( R25)/( ) R50 T25 T50 R 25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R 50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. LABEL SIDE Each mark points to the center position of each chip. Tr1 / Tr2: IGBT Di1 / Di2: FWDi Th: NTC Thermistor Di2 Tr2 Di2 Tr2 Di2 Tr2 Di2 Tr2 Di2 Tr2 Di2 Tr2 Di2 Tr2 Di2 Tr2 Di2 Tr2 Di2 Tr2 Tr1 Di1 Tr1 Di1 Tr1 Di1 Tr1 Di1 Tr1 Di1 Tr1 Di1 Tr1 Di1 Tr1 Di1 Tr1 Di1 Tr1 Di1 Th 24.5 40.7 54.2 82.7 96.2 87 .7 101. 2 59.2 45.7 284.2 256.0 226.2 198.0 168.2 140.0 110.2 82.0 52.2 24.0 286.0 257 .7 228.0 199.7 170.0 141 .7 112.0 83.7 54.0 46.5 25.7 MOUNTING SIDE MOUNTING SIDE RECOMMENDED AREA FOR EVEN APPLICATION OF THERMALL Y CONDUCTIVE GREASE (PER BASEPLATE) - CONCAVE + CONVEX X ec Y MOUNTING SIDE - CONCAVE + CONVEX CM2500DY-24S Dual Half-Bridge IGBTMOD™ HVIGBT Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 5/12 Rev. 1

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(TYPICAL) 100 102 103 102 101 10-1 100 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 104 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 8 10 1412 16 18 20 Tj = 25°C VGE = 0V Cies Coes Cres IC = 5000A IC = 2500A IC = 1000A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 0 2 4 6 8 10 VGE = 20V 1213.5 Tj = 25°C 5000 3000 2000 1000 4000 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3.5 2.5 3.0 2.0 1.5 0.5 1.0 50002000 3000 40001000 VGE = 15V Tj = 25°C Tj = 125°C Tj = 150°C 10-1 COLLECTOR CURRENT, IC, (AMPERES) 103 102 103 102 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 125°C Inductive Load tf 104 COLLECTOR CURRENT, IC, (AMPERES) 103 102 103 102 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 150°C Inductive Load tf 104 EXTERNAL GATE RESISTANCE, RG, (/uni03A9) 103 100 101 102 SWITCHING TIME, (ns) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V IC = 2500A Tj = 125°C Inductive Load tf 102 EXTERNAL GATE RESISTANCE, RG, (/uni03A9) 103 100 101 102 SWITCHING TIME, (ns) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) td(off) td(on) tr VCC = 600V VGE = ±15V IC = 2500A Tj = 150°C Inductive Load tf 102 Tj = 25°C Tj = 125°C Tj = 150°C CM2500DY-24S Dual Half-Bridge IGBTMOD™ HVIGBT Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 55/12 Rev. 1

TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 100 10-1 100 10110-410-5 10-3 10-2 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.16°C/W (IGBT) R th(j-c) = 0.17°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE RESISTANCE, RG, (Ω) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 103 10-1 100 102 101 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 125°C VCC = 600V VGE = ±15V IC = 2500A Tj = 125°C COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 103 102 102 103 101 104 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE 2000 4000 6000 8000 IC = 2500A VCC = 600V EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 104 102 103 102 101 104 VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 125°C Inductive Load Irr trr REVERSE RECOVERY, Irr (A), trr (ns) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 104 103 103 102 103 102 101 104 VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 150°C Inductive Load Irr trr REVERSE RECOVERY, Irr (A), trr (ns) Eon Eoff Err VCC = 600V VGE = ±15V RG = 0/uni03A9 Tj = 150°C COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 103 102 102 103 101 104 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Eon Eoff Err GATE RESISTANCE, RG, (Ω) SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECIVERY ENERGY, Err, (mJ) 103 10-1 100 102 101 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC = 600V VGE = ±15V IC = 2500A Tj = 150°C Eon Eoff Err Eon Eoff Err CM2500DY-24S Dual Half-Bridge IGBTMOD™ HVIGBT Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 6 5/12 Rev. 1

Product Information

CM2500DY-24S specifications and overview.

Summary

Dual Half-Bridge IGBTMOD HVIGBT Series Module 2500 Amperes/1200 Volts

Description

Dual Half-Bridge IGBTMOD HVIGBT Series Module 2500 Amperes/1200 Volts

Source title CM2500DY-24S Datasheet(PDF) - Powerex Power Semiconductors

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