CM2400HC-34N

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CONFIDENTIAL M I T S U B I S H I H V I G B T M O D U L E S CM2400HC-34N HIGH POWER SWITCHING USE th -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 1 of 7 CM2400HC-34N

• Insulated Type
• 1-element in a Pack
• AlSiC Baseplate
• Trench Gate IGBT : CSTBTTM
• Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Prepared by Date S.Iura Revision: C I.Umezaki 5-Sep.-2011 COMPANY PROPRIETARY NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC WRITTEN PERMISSION OF MITSUBISHI ELECTRIC CORPORATION

CONFIDENTIAL M I T S U B I S H I H V I G B T M O D U L E S CM2400HC-34N HIGH POWER SWITCHING USE th -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 2 of 7 MAXIMUM RATINGS Symbol Item Conditions Ratings Unit VCES Collector-emitter voltage VGE = 0V, Tj = 25 °C 1700 V VGES Gate-emitter voltage VCE = 0V, Tj = 25 °C ± 20 V IC DC, Tc = 75 °C 2400 A ICM Collector current Pulse (Note 1) 4800 A IE DC 2400 A IEM Emitter current (Note 2) Pulse (Note 1) 4800 A Pc Maximum power dissipation (Note 3) Tc = 25 °C, IGBT part 13100 W Viso Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1min. 4000 V Tj Junction temperature −40 ~ +150 °C Top Operating temperature −40 ~ +125 °C Tstg Storage temperature −40 ~ +125 °C Tpsc Maximum short circuit pulse width VCC =1200V, VCE ≤ VCES, VGE =15V, Tj =125°C 10 µs

ELECTRICAL CHARACTERISTICS

Tj = 25 °C — — 8.0 ICES Collector cutoff current VCE = VCES, VGE = 0V Tj = 125 °C — 6.0 16.0 mA VGE(th) Gate-emitter threshold voltage VCE = 10 V, IC = 240 mA, Tj = 25 °C 6.0 7.0 8.0 V IGES Gate leakage current VGE = VGES, VCE = 0V, Tj = 25°C — — 0.5 µA Cies Input capacitance — 352 — nF Coes Output capacitance — 19.2 — nF Cres Reverse transfer capacitance VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25 °C — 5.6 — nF Qg Total gate charge VCC = 850 V, IC = 2400 A VGE = ±15V, Tj = 25 °C — 24.5 — µC Tj = 25 °C — 2.15 2.80 VCE(sat) Collector-emitter saturation voltage IC = 2400 A (Note 4) VGE = 15 V Tj = 125 °C — 2.40 — V td(on) Turn-on delay time — — 1.50 µs tr Turn-on rise time — — 0.70 µs Eon(10%) Turn-on switching energy (Note 5) VCC = 850 V, IC = 2400 A VGE = ±15 V, RG(on) = 0.7 Ω Tj = 125 °C, Ls = 100 nH Inductive load — 0.64 — J/P td(off) Turn-off delay time — — 3.00 µs tf Turn-off fall time — — 0.60 µs Eoff(10%) Turn-off switching energy (Note 5) VCC = 850 V, IC = 2400 A VGE = ±15 V, RG(off) = 1.6 Ω Tj = 125 °C, Ls = 100 nH Inductive load — 0.84 — J/P Tj = 25 °C — 2.60 3.30 VEC Emitter-collector voltage (Note 2) IE = 2400 A (Note 4) VGE = 0 V Tj = 125 °C — 2.30 — V trr R e v e r s e r e c o v e r y t i m e (Note 2) — — 1.50 µs Qrr Reverse recovery charge (Note 2) — 620 — µC Erec (10%) Reverse recovery energy (Note 2),(Note 5) VCC = 850 V, IE = 2400 A VGE = ±15 V, RG(on) = 0.7 Ω Tj = 125 °C, Ls = 100 nH Inductive load — 0.38 — J/P

CONFIDENTIAL M I T S U B I S H I H V I G B T M O D U L E S CM2400HC-34N HIGH POWER SWITCHING USE th -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 3 of 7 THERMAL CHARACTERISTICS Limits Symbol Item Conditions Min Typ Max Unit Rth(j-c)Q Thermal resistance Junction to Case, IGBT part — — 9.5 K/kW Rth(j-c)R Thermal resistance Junction to Case, FWDi part — — 21.0 K/kW Rth(c-f) Contact thermal resistance Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm — 8.0 — K/kW MECHANICAL CHARACTERISTICS Limits Symbol Item Conditions Min Typ Max Unit Mt M8: Main terminals screw 7.0 — 20.0 N·m Ms M6: Mounting screw 3.0 — 6.0 N·m Mt Mounting torque M4: Auxiliary terminals screw 1.0 — 3.0 N·m m Mass — 0.8 — kg CTI Comparative tracking index 600 — — — da Clearance 19.5 — — mm dS Creepage distance 32.0 — — mm LP CE Parasitic stray inductance — 16 — nH RCC’+EE’ Internal lead resistance Tc = 25 °C — 0.14 — mΩ Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). Note 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Note 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). Note 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Note 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.

CONFIDENTIAL M I T S U B I S H I H V I G B T M O D U L E S CM2400HC-34N HIGH POWER SWITCHING USE th -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 4 of 7 PERFORMANCE CURVES TRANSFER CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 1000 2000 3000 4000 5000 0123456 Collector - Emitter Voltage [V] Collector Current [A] VGE = 8V Tj = 125°C VGE = 20V VGE = 15V VGE = 10V VGE = 12V 1000 2000 3000 4000 5000 0 5 10 15 Gate - Emitter Voltage [V] Collector Current [A] Tj = 125°C Tj = 25°C VCE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CHARACTERISTICS (TYPICAL) 1000 2000 3000 4000 5000 01234 Collector-Emitter Saturation Voltage [V] Collector Current [A] Tj = 25°C VGE = 15V Tj = 125°C 1000 2000 3000 4000 5000 01234 Emitter-Collector Voltage [V] Emitter Current [A] Tj = 125°C Tj = 25°C

CONFIDENTIAL M I T S U B I S H I H V I G B T M O D U L E S CM2400HC-34N HIGH POWER SWITCHING USE th -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 5 of 7 PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) 100 1000 10000 0.1 1 10 100 Collector-Emitter Voltage [V] Capacitance [nF] Cies VGE = 0V, Tj = 25°C f = 100kHz Coes Cres HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 0.5 1.5 2.5 0 1000 2000 3000 4000 5000 Collector Current [A] Switching Energies [J/P] Erec VCC = 850V, VGE = ±15V RG(on) = 0.7 Ω, RG(off) = 1.6 Ω Tj = 125°C, Inductive load Eoff Eon GATE CHARGE CHARACTERISTICS (TYPICAL) -15 -10 01 0 2 0 3 0 Gate Charge [µC] Gate-Emitter Voltage [V] 4 0 VCE = 850V, IC = 2400A Tj = 25°C HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 02468 1 0 1 2 Gate Resistance [ Ω] Switching Energies [J/P] Erec VCC = 850V, IC = 2400A VGE = ±15V, Tj = 125°C Inductive load Eoff Eon

CONFIDENTIAL M I T S U B I S H I H V I G B T M O D U L E S CM2400HC-34N HIGH POWER SWITCHING USE th -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 6 of 7 PERFORMANCE CURVES HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 0.01 0.1 100 1000 10000 Collector Current [A] Switching Times [µs] tf VCC = 850V, VGE = ±15V RG(on) = 0.7 Ω, RG(off) = 1.6 Ω Tj = 125°C, Inductive load tr td(on) td(off) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0.2 0.4 0.6 0.8 1.2 0.001 0.01 0.1 1 10 Time [s] Normalized Transient Thermal impedance Rth(j-c)Q = 9.5 K/kW Rth(j-c)R = 21.0 K/kW FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 100 100 1000 10000 Emitter Current [A] Reverse Recovery Time [µs] 100 1000 10000 Reverse Recovery Current [A] trr VCC = 850V, VGE = ±15V RG(on) = 0.7 Ω Tj = 125°C, Inductive load Irr

CONFIDENTIAL M I T S U B I S H I H V I G B T M O D U L E S CM2400HC-34N HIGH POWER SWITCHING USE th -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1035-C 7 of 7 PERFORMANCE CURVES REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1000 2000 3000 4000 5000 6000 0 500 1000 1500 2000 Collector-Emitter Voltage [V] Collector Current [A] VCC ≤ 1200V, VGE = ±15V Tj = 125°C, RG(off) ≥ 1.6 Ω FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 500 1000 1500 2000 2500 3000 0 500 1000 1500 2000 Collector-Emitter Voltage [V] Reverse Recovery Current [A] VCC ≤ 1200V, di/dt ≤ 4700A/µs Tj = 125°C SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 5000 10000 15000 20000 25000 0 500 1000 1500 2000 Collector-Emitter Voltage [V] Collector Current [A] VCC ≤ 1200V, VGE = ±15V RG(on) ≥ 0.7Ω, RG(off) ≥ 1.6Ω Tj = 125°C, tpsc ≤ 10µs