CM200TU-5F

CM200TU-5F POWEREX | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Six IGBTMOD™

200 Amperes/250 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.21 107.0 C 4.02 102.0 E 0.43 11.0 F 0.91 23.0 G 0.47 12.0 H 0.85 21.7 J 0.91 23.0 Dimensions Inches Millimeters K 0.15 3.75 L 0.67 17.0 M 1.91 48.5 N 0.03 0.8 P 0.32 8.1 Q 1.02 26.0 R 0.22 Dia. 5.5 Dia. S 0.57 14.4 u wv TC Measured Point TC Measured Point D C 5 - M5 NUTS M L K R 4 - Mounting Holes K EE G G B F EHH S A GvP EvP GuN EuN GvN EvN GwN EwN EE EH J H N J 0.110 - 0.5 Tab P Q GuP EuP GwP EwP GuP EuP GuN EuN U P N GvP EvP GvN EvN V GwP EwP GwN EwN W Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: h Low Drive Power h Low V CE(sat) h Discrete Super-Fast Recovery Free-Wheel Diode h Isolated Baseplate for Easy Heat Sinking Applications: h AC Motor Control h UPS h Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200TU-5F is a 250V (V CES ), 200 Ampere Six- IGBT IGBTMOD™ Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 200 5

Trench Gate Design Six IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM200TU-5F Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 250 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 200 Amperes Peak Collector Current (Tj ≤ 150°C) I CM 400* Amperes Emitter Current I E 200 Amperes Peak Emitter Current I EM 400* Amperes Maximum Collector Dissipation (Tj < 150°C) P c 600 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M5 Mounting – 31 in-lb Weight – 680 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 1 mA Gate Leakage Voltage I GES VGE = VCES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 20mA, VCE = 10V 3.0 4.0 5.0 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 200A, VGE = 10V, Tj = 25°C – 1.2 1.7 Volts IC = 200A, VGE = 10V , Tj = 125°C – 1.1 – Volts Total Gate Charge Q G VCC = 100V, IC = 200A, VGE = 10V – – nC Emitter-Collector Voltage V EC IE = 200A, VGE = 0V – – 2.0 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 6 6 n f Output Capacitance C oes VCE = 10V, VGE = 0V – – 3.0 nf Reverse Transfer Capacitance C res – – 2.3 nf Resistive Turn-on Delay Time t d(on) VCC = 100V , IC = 200A, – – 700 ns Load Rise Time t r VGE1 = VGE2 = 10V, – – 1800 ns Switch Turn-off Delay Time t d(off) R G = 13V, Resistive – – 700 ns Times Fall Time t f Load Switching Operation – – 500 ns Diode Reverse Recovery Time t rr IE = 200A, diE/dt = -400A/µs– – 3 0 0 n s Diode Reverse Recovery Charge** Q rr IE = 200A, diE/dt = -400A/µs– – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT 1/6 Module – – 0.21 °C/W Thermal Resistance, Junction to Case R th(j-c)R Per Free-Wheel Diode 1/6 Module – – 0.47 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.09 – °C/W * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Trench Gate Design Six IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 GATE CHARGE, Q G , (mC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 0.5 1.0 1.5 2.0 VCC = 100V VCC = 50V IC = 200A EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 trr Irr di/dt = -400A/msec Tj = 25°C 103 102 101 REVERSE RECOVERY CURRENT, I rr, (AMPERES) COLLECTOR CURRENT, I C , (AMPERES) SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE(TYPICAL) 10-1 100 102 102 101 100 10-1 VGE = 0V f = 1MHz 101 C ies C oes C res 101 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 5 10 15 Tj = 25°C IC = 80A IC = 400A IC = 200A COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2.0 0 80 160 240 320 1.5 1.0 0.5 400 VGE = 10V Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 02468 1 0 300 200 100 400 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 012345 300 100 VGE = 15V 8 6 5.7510 5.5 Tj = 25oC 200 400 5.25 4.75 4.5

Trench Gate Design Six IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.21°C/W Zth = R th

• (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.47°C/W Zth = R th
• (NORMALIZED VALUE)