CM200RX-12A

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBTMOD™ + Brake NX-Series Module

200 Amperes/600 Volts

1Rev. 11/08 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration and a seventh IGBT with free- wheel diode for dynamic braking. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM200RX-12A is a 600V (VCES),

200 Ampere Six-IGBTMOD™ +

Brake Power Module. Type Current Rating VCES Amperes Volts (x 50) CM 200 12 Outline Drawing and Circuit Diagram P(35) B(4) GWN(14) GWP(18) EWP(17) GVN(22) GVP(26) EVP(25) GUN(30) EWN(13)EVN(21)EUN(29) GUP(34) EUP(33) U(1) V(2) W(3) GB(6) N(36) TH1 (11) TH2 (10) NTC EB(5) A AH AZ BA QR ST U V H X Y Z Z N M L K B AN AJ APAMAMAM AKAMAMAJ AL AX AY AK AL ALALAL ALAL Z RQ QR D E F GH J P P W J P AA(4 PLACES) DETAIL "B" *ALL PIN DIMENSIONS WITHIN A TOLERANCE OF ±0.5 AB (6 PLACES) DETAIL "A" 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 DETAIL "B" C R AT AU AQ AV AW ASAR AL AL AD AE AF AG BB BC BD BE AC DETAIL "A" Dimensions Inches Millimeters A 5.39 136.9 B 3.03 77 .1 D 4.79 121 .7 F 3.89 99.0 G 3.72 94.5 H 0.83 21 .14 J 0.37 6.5 K 2.44 62.0 L 2.26 57 .5 N 1 .53 39.0 P 0.24 6.0 Q 0.48 12.0 R 0.67 17 .0 S 1 .53 39.0 T 0.87 22.0 U 0.55 14.0 V 0.54 13.64 W 0.33 8.5 X 0.53 13.5 Y 0.81 20.71 Z 0.9 22.86 AA 0.22 Dia. 5.5 Dia. AB M5 M5 AC 0.06 1 .5 Dimensions Inches Millimeters AD 0.51 13.0 AE 0.12 3.0 AF 0.21 5.4 AG 0.49 12.5 AH 0.81 20.5 AJ 0.30 7 .75 AK 0.28 7 .25 AL 0.15 3.81 AM 0.45 11 .44 AN 0.14 3.5 AP 0.16 4.06 AQ 0.78 20.05 AR 0.03 0.8 AS 0.27 7 .0 AT 0.16 4.2 AU 0.61 15.48 AV 0.60 15.24 AW 0.46 11 .66 AX 0.04 1 .15 AY 0.02 0.65 AZ 0.29 7 .4 BA 0.05 6.2 BB 0.49 12.5 BC 0.17 Dia. 4.3 Dia. BD 0.10 Dia. 2.5 Dia. BE 0.08 Dia. 2.1Dia.

Six IGBTMOD™ + Brake NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 2 Rev. 11/08 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol CM200RX-12A Units Power Device Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Mounting Torque, M5 Mounting Screws — 31 in-lb Mounting Torque, M5 Main Terminal Screws — 31 in-lb Module Weight (Typical) — 330 Grams Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500 Volts Inverter Sector Collector-Emitter Voltage (G-E Short) VCES 600 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (TC = 68°C)* IC 200 Amperes Peak Collector Current** ICM 400 Amperes Emitter Current (TC = 25°C, Tj < 150°C)* IE* 200 Amperes Peak Emitter Current (Tj < 150°C) IEM*** 400 Amperes Maximum Collector Dissipation (TC = 25°C, Tj < 150°C)* PC 735 Watts Brake Sector Collector-Emitter Voltage (G-E Short) VCES 600 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (TC = 75°C)* IC 100 Amperes Peak Collector Current** ICM 200 Amperes Maximum Collector Dissipation (TC = 25°C, Tj < 150°C)* PC 400 Watts Repetitive Peak Reverse Voltage (Clamp Diode Part) VRRM*** 600 Volts Forward Current (TC = 25°C)* IF* 100 Amperes Forward Current (Clamp Diode Part) IFM*** 200 Amperes *TC, Tf measured point is just under the chips. Pulse width and repetition rate should be such that device junction temperature (T j) does not exceed Tj(max) rating. *Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Six IGBTMOD™ + Brake NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 3Rev. 11/08 Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Inverter Sector Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate-Emitter Threshold Voltage VGE(th) I C = 20mA, VCE = 10V 5 6 7 Volts Gate Leakage Current IGES V GE = VGES, VCE = 0V — — 0.5 µA Collector-Emitter Saturation Voltage V CE(sat) I C = 200A, VGE = 15V, Tj = 25°C — 1 .7 2.1 Volts I C = 200A, VGE = 15V, Tj = 125°C — 1 .9 — Volts IC = 200A, VGE = 15V, Chip — 1 .6 — Volts Input Capacitance Cies — — 27 .0 nF Output Capacitance Coes V CE = 10V, VGE = 0V — — 2.7 nF Reverse Transfer Capacitance Cres — — 0.8 nF Total Gate Charge QG V CC = 300V, IC = 200A, VGE = 15V — 530 — nC Inductive Turn-on Delay Time t d(on) — — 120 ns Load Turn-on Rise Time t r V CC = 300V, IC = 200A, — — 150 ns Switch Turn-off Delay Time t d(off) V GE = ±15V, — — 350 ns Time Turn-off Fall Time t f R G = 5.6Ω, IE = 150A, — — 600 ns Reverse Recovery Time* trr Inductive Load Switching Operation — — 200 ns Reverse Recovery Charge* Qrr — 5.0 — µC Emitter-Collector Voltage* VEC I E = 200A, VGE = 0V, Tj = 25°C — 2.0 2.8 Volts I E = 200A, VGE = 0V, Tj = 125°C — 1 .95 — Volts I E = 200A, VGE = 0V, Chip — 1 .9 — Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT — — 0.17 °C/W Thermal Resistance, Junction to Case R th(j-c)D Per FWDi — — 0.33 °C/W Contact Thermal Resistance** Rth(c-f) Thermal Grease Applied — 0.015 — °C/W Internal Gate Resistance RGint T C = 25°C — 0 — Ω External Gate Resistance RG 3.0 — 30 Ω *Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). **TC, Tf measured point is just under the chips. 33 32 31 30 29 28 27 26 25 24 23 22 Dimensions in mm (Tolerance: ±1mm) 21 20 19 18 17 16 15 14 13 1 2 3 4 IGBT FWDi NTC Thermistor Chip Location (Top View) 1 7. 4 22.9 33.9 44.9 55.9 79.4 92.4 106.0 39.7 24.4 UP VP WP WNVNUN Br 100.2 26.8 Th 22.9 33.9 44.9 55.9 79.4 91 .4 101. 8 18.3 28.0 35.0 UP VP WP WN Br VNUN CHIP LOCATION (TOP VIEW)

Six IGBTMOD™ + Brake NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 4 Rev. 11/08 Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Brake Sector Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector Cutoff Current ICES V CE = VCES, VGE = 0V — — 1 .0 mA Gate-Emitter Threshold Voltage VGE(th) I C = 10mA 5 6 7 Volts Gate Leakage Current IGES V GE = VGES, VCE = 0V — — 0.5 µA Collector-Emitter Saturation Voltage V CE(sat) I C = 100A, VGE = 15V, Tj = 25°C — 1 .7 2.1 Volts IC = 100A, VGE = 15V, Tj = 125°C — 1 .9 — Volts IC = 100A, VGE = 15V, Chip — 1 .6 — Volts Input Capacitance Cies — — 13.3 nF Output Capacitance Coes V CE = 10V, VGE = 0V — — 1 .4 nF Reverse Transfer Capacitance Cres — — 0.45 nF Total Gate Charge QG V CC = 300V, IC = 100A, VGE = 15V — 300 — nC Repetitive Reverse Current* IRRM V R = VRRM — — 1 .0 mA Forward Voltage Drop * VF I F = 100A, Tj = 25°C — 2.0 2.8 Volts I F = 100A, Tj = 125°C — 1 .95 — Volts I F = 100A, Chip — 1 .9 — Volts Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT — — 0.31 °C/W Thermal Resistance, Junction to Case R th(j-c)D Per FWDi — — 0.59 °C/W Contact Thermal Resistance Rth(j-f) Thermal Grease Applied — 0.015 — °C/W Internal Gate Resistance RGint T C = 25°C — 0 — Ω External Gate Resistance RG 6 — 62 Ω NTC Thermistor Sector, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Zero Power Resistance R TC = 25°C 4.85 5.00 5.15 k Ω Deviation of Resistance ∆R/R T C = 100°C, R100 = 493Ω –7 .3 — +7 .8 % B Constant B(25/50) B = (InR 1 – InR2) / (1/T1 – 1/T2)* — 3375 — K Power Dissipation P25 T C = 25°C — — 10 mW *Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). TC, Tf measured point is just under the chips. *R1: Resistance at Absolute Temperature T1(K), R2: Resistance at Absolute Temperature T2(K), T(K) = t(°C) + 273.15

Six IGBTMOD™ + Brake NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 5Rev. 11/08 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) CAPACITANCE VS. VCE(INVERTER PART - TYPICAL) 100 102 102 101 100 10-1 1010 1 32 4 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (INVERTER PART - TYPICAL) 102 103 EMITTER CURRENT, IE, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) 6 8 10 1412 16 18 20 Tj = 25°C Tj = 25°C Tj = 125°C VGE = 0V Cies Coes Cres IC = 400A IC = 200A IC = 80A COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (INVERTER PART - TYPICAL) 0 2 4 6 8 10 VGE = 20V 121315 9 8 Tj = 25°C 400 100 200 300 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) 3.5 3.0 2.0 2.5 1.0 1.5 0.5 400300100 200 VGE = 15V Tj = 25°C Tj = 125°C 10-1 COLLECTOR CURRENT, IC, (AMPERES) 104 103 101 102 102 100 101 SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (INVERTER PART - TYPICAL) td(off) td(on) tr VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 125°C Inductive Load tf 103 GATE RESISTANCE, RG, (Ω) 103 100 101 102 100 101 SWITCHING TIME, (ns) SWITCHING TIME VS. GATE RESISTANCE (INVERTER PART - TYPICAL) td(off) td(on) tr VCC = 300V VGE = ±15V IC = 200A Tj = 125°C Inductive Load tf 102 GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. VGE(INVERTER PART) 200 800600400 VCC = 300V VCC = 200V IC = 200A EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (INVERTER PART - TYPICAL) 103 101 102 102 101 103 VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Inductive Load Irr trr REVERSE RECOVERY, Irr (A), trr (ns)

Six IGBTMOD™ + Brake NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 6 Rev. 11/08 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (INVERTER PART - TYPICAL) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.17°C/W (IGBT) R th(j-c) = 0.33°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (BRAKE PART - TYPICAL) 100 10-5 10-4 10-3 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Zth = Rth • (NORMALIZED VALUE) Single Pulse T C = 25°C Per Unit Base = R th(j-c) = 0.31°C/W (IGBT) R th(j-c) = 0.59°C/W (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') GATE RESISTANCE, RG, (Ω) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 102 100 101 101 10-1 100 VCC = 300V VGE = ±15V IC = 200A Tj = 125°C Inductive Load 102 SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) Eon Eoff GATE RESISTANCE, RG, (Ω) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 100 101 101 10-1 100 VCC = 300V VGE = ±15V IE = 200A Tj = 125°C Inductive Load 102 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (INVERTER PART - TYPICAL) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 102 101 101 102 100 10-1 VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 125°C Inductive Load 103 REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (INVERTER PART - TYPICAL) Err Err VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 125°C Inductive Load Eon Eoff COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) 102 101 101 102 100 10-1 103 SWITCHING LOSS VS. COLLECTOR CURRENT (INVERTER PART - TYPICAL) 0 1 32 4 100 101 FORWARD VOLTAGE, VF, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (BRAKE PART - TYPICAL) 102 103 FORWARD CURRENT, IF, (AMPERES) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (BRAKE PART - TYPICAL) 3.5 3.0 2.0 2.5 1.0 1.5 0.5 20015050 100 VGE = 15V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C